Characterization of the InN conversion layer in InP surface by ammonia gas: Nuclear reaction analysis, X-ray diffraction and Raman scattering studies

AbstractIn the present study, Raman spectroscopy (RS) and x-ray diffraction have been used to characterize semiconductor multilayer interfaces. A model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the ‘blurring’ of interfaces is possible because RS is capable of directly ‘counting’ the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. Several a-Si/a-Ge multilayers deposited by UHV evaporation (MBD) exhibit exceptionally sharp interfaces (intermixing width <l.0Å) and regular periodicities.

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Characterization of sputtered films of Tl2Ba2CaCu2O8 using Raman scattering and x-ray diffraction

Physica C Superconductivity ◽

10.1016/0921-4534(91)90517-3 ◽

1991 ◽

Vol 182 (4-6) ◽

pp. 231-240 ◽

Cited By ~ 12

Author(s):

J. Chrzanowski ◽

J.C. Irwin ◽

B. Heinrich ◽

A.E. Curzon ◽

N. Fortier ◽

...

Keyword(s):

Raman Scattering ◽

X Ray Diffraction ◽

X Ray ◽

Sputtered Films

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Characterization of interfacial structure of InGaAs/InP short‐period superlattices by high resolution x‐ray diffraction and Raman scattering

Journal of Applied Physics ◽

10.1063/1.358899 ◽

1995 ◽

Vol 77 (4) ◽

pp. 1492-1497 ◽

Cited By ~ 7

Author(s):

Teruo Mozume

Keyword(s):

High Resolution ◽

Raman Scattering ◽

Interfacial Structure ◽

X Ray Diffraction ◽

X Ray ◽

Short Period ◽

Short Period Superlattices

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X-Ray Diffraction and Reflectance, Raman Scattering and Photoluminescence Characterization of Thermally Annealed Epitaxial SI1-XGEX Layers

MRS Proceedings ◽

10.1557/proc-298-51 ◽

1993 ◽

Vol 298 ◽

Author(s):

M. LíbeznÝ ◽

I. De Wolf ◽

J. Poortmans ◽

A. Van Ammel ◽

M. Caymax ◽

...

Keyword(s):

Raman Scattering ◽

Thermal Treatments ◽

X Ray Diffraction ◽

Strained Layers ◽

Reflectance Measurement ◽

Thermally Induced ◽

Capping Layer ◽

X Ray ◽

Pl Spectra

AbstractSil-xGex, undoped strained layers with a pure Si-capping layer were grown epitaxially by UHV CVD on Si (100) substrates. The samples were subjected to thermal treatments corresponding to typical deviceprocessing. Effects connected with thermally induced relaxations were studied by Raman scattering, XRD, photoluminescence (PL) and defect etching. The thickness of the layers was determined from X-ray reflectance measurement. Strain values for the as-grown and relaxed samples were extracted from Raman scattering, XRD measurements and defect etching and correlated. Sil-xGex-layer related peaks were observed in PL spectra of several samples. An explanation why those peaks are not observed in all the samples is suggested.

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The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071107 ◽

1973 ◽

Vol 31 ◽

pp. 132-133 ◽

Cited By ~ 1

Author(s):

R. E. Herfert

Keyword(s):

Surface Characterization ◽

Analytical Techniques ◽

X Ray Diffraction ◽

Depth Of Penetration ◽

X Ray ◽

The Past ◽

Transmission Electron ◽

Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

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High Resolution Replication of Organoclay Surfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100055126 ◽

1982 ◽

Vol 40 ◽

pp. 576-577

Author(s):

W. W. Barker ◽

W. E. Rigsby ◽

V. J. Hurst ◽

W. J. Humphreys

Keyword(s):

Clay Mineral ◽

Organic Molecule ◽

Organic Molecules ◽

X Ray Diffraction ◽

Xrd Pattern ◽

X Ray ◽

Naturally Occurring ◽

Silicate Layers ◽

Mineral Identification

Experimental clay mineral-organic molecule complexes long have been known and some of them have been extensively studied by X-ray diffraction methods. The organic molecules are adsorbed onto the surfaces of the clay minerals, or intercalated between the silicate layers. Natural organo-clays also are widely recognized but generally have not been well characterized. Widely used techniques for clay mineral identification involve treatment of the sample with H2 O2 or other oxidant to destroy any associated organics. This generally simplifies and intensifies the XRD pattern of the clay residue, but helps little with the characterization of the original organoclay. Adequate techniques for the direct observation of synthetic and naturally occurring organoclays are yet to be developed.

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Synthesis and characterization of TiN / Ti / AISI 410 coatings

Journal of Sciences and Engineering ◽

10.32829/sej.v2i1.54 ◽

2018 ◽

Vol 2 (1) ◽

pp. 7

Author(s):

S Chirino ◽

Jaime Diaz ◽

N Monteblanco ◽

E Valderrama

Keyword(s):

Synthesis And Characterization ◽

Photoemission Spectroscopy ◽

X Ray Diffraction ◽

X Ray ◽

Columnar Grains ◽

Tin Thin Films ◽

Steel Aisi ◽

Interacting Surfaces ◽

Stainless Steel Aisi

The synthesis and characterization of Ti and TiN thin films of different thicknesses was carried out on a martensitic stainless steel AISI 410 substrate used for tool manufacturing. The mechanical parameters between the interacting surfaces such as thickness, adhesion and hardness were measured. By means of the scanning electron microscope (SEM) the superficial morphology of the Ti/TiN interface was observed, finding that the growth was of columnar grains and by means of EDAX the existence of titanium was verified. Using X-ray diffraction (XRD) it was possible to observe the presence of residual stresses (~ -3.1 GPa) due to the different crystalline phases in the coating. Under X-ray photoemission spectroscopy (XPS) it was possible to observe the molecular chemical composition of the coating surface, being Ti-N, Ti-N-O and Ti-O the predominant ones.

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Studies on the Preparation, Characterization and Solubility of -Cyclodextrin-Roxythromycin Inclusion Complexes

International Journal of Pharmaceutical Sciences and Nanotechnology ◽

10.37285/ijpsn.2009.2.2.5 ◽

2009 ◽

Vol 2 (2) ◽

pp. 523-530

Author(s):

D. Nagasamy Venkatesh ◽

S. Karthick ◽

M. Umesh ◽

G. Vivek ◽

R.M. Valliappan ◽

...

Keyword(s):

Dissolution Rate ◽

Inclusion Complexes ◽

Phase Solubility ◽

X Ray Diffraction ◽

Scanning Calorimetry ◽

X Ray ◽

Ir Studies ◽

Poorly Soluble ◽

Poorly Soluble Drug

Roxythromycin/ β-cyclodextrin (Roxy/ β-CD) dispersions were prepared with a view to study the influence of β-CD on the solubility and dissolution rate of this poorly soluble drug. Phase-solubility profile indicated that the solubility of roxythromycin was significantly increased in the presence of β-cyclodextrin and was classified as AL-type, indicating the 1:1 stoichiometric inclusion complexes. Physical characterization of the prepared systems was carried out by differential scanning calorimetry (DSC), X-ray diffraction studies (XRD) and IR studies. Solid state characterization of the drug β-CD binary system using XRD, FTIR and DSC revealed distinct loss of drug crystallinity in the formulation, ostensibly accounting for enhancement of dissolution rate.

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