Tungsten Chemical Mechanical Polishing Endpoint Detection

1999 ◽  
Vol 566 ◽  
Author(s):  
Larry Sue ◽  
Jörn Lültzen ◽  
Simon Gonzales
Keyword(s):  
Process Control ◽  
Chemical Mechanical Polishing ◽  
Detection System ◽  
Mechanical Polishing ◽  
Endpoint Detection ◽  
Evaluation Tool ◽  
Strong Signal ◽  
Motor Current ◽  
Endpoint Data ◽  
Platen Temperature

Conventional methods of controlling tungsten Chemical Mechanical Polishing (WCMP) processes have included blanket wafer polish rate and platen temperature monitoring. In order to enhance process control of WCMP, a second generation motor-current sense endpoint system was chosen as the evaluation tool. The endpoint detection system (Luxtron 9300) was installed on a WCMP polisher (IPEC 472) at the Motorola MOS6 facility. Endpoint algorithms were evaluated under various polishing conditions during time periods between pad changes. The data collected over 3 months led to a reliable endpoint recipe for both the contact and via WCMP process. The endpoint data compared with the conventional timed recipe, indicated that a time reduction at WCMP could be achieved, with a 10% increase in throughput. In addition, contact and via W-plug endpoint data showed a strong signal versus pattern density for given device types. In summary, the motor current endpoint system tested verified reliable endpoint, process control, and characterization capabilities.

Neural Network Based Run-to-Run Process Controller for Copper Chemical Mechanical Polishing

2004 ◽  
Author(s):  
Gou-Jen Wang ◽  
Bor-Shin Lin ◽  
Kang J. Chang
Keyword(s):  
Neural Network ◽  
Process Control ◽  
Chemical Mechanical Polishing ◽  
Moving Average ◽  
Control Variable ◽  
Feedforward Neural Networks ◽  
Mechanical Polishing ◽  
Additional Control ◽  
Control Scheme ◽  
Time Varying Environment

Process Control is one of the key methods to improve manufacturing quality. This research proposes a neural network based run-to-run process control scheme that is adaptive to the time-varying environment. Two multilayer feedforward neural networks are implemented to conduct the process control and system identification duties. The controller neural network equips the control system with more capability in handling complicate nonlinear processes. With the system information provided by this neural network, batch polishing time (T) an additional control variable, can be implemented along with the commonly used down force (p) and relative speed between the plashing pad and the plashed wafer (v). Computer simulations and experiments on copper chemical mechanical polishing processes illustrate that in drafting suppression and environmental changing adaptation that the proposed neural network based run-to-run controller (NNRTRC) performs better than the double exponentially weighted moving average (d-EWMA) approach. It is also suggested that the proposed approach can be further implemented as both an end-point detector and a pad-conditioning sensor.

Friction-Based In Situ Endpoint Detection of Copper CMP Process

2008 ◽  
Vol 53-54 ◽  
pp. 125-130 ◽  
Author(s):  
Chi Xu ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
Feng Wei Huo
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Polishing ◽  
Manufacturing Industry ◽  
Integrate Circuit ◽  
Detection System ◽  
Force Sensor ◽  
Endpoint Detection ◽  
Ic Manufacturing ◽  
Copper Cmp

Chemical mechanical polishing (CMP) has been extensively used in the integrate circuit (IC) manufacturing industry as a widely accepted global planarization technology, accurate in situ endpoint detection of CMP process can reduce the product variance, significantly improve yield and throughput. A CMP in situ endpoint detection system, which measured the friction and downforce during CMP process using a specially designed three-axis strain gauge force sensor, was developed. The frictional transition from copper (Cu) to tantalum (Ta) barrier as well as Ta barrier to silicon dioxide (SiO2) dielectric was detected during CMP process. The experimental results showed that the change of friction could be detected when the polished material changed. The developed CMP in situ endpoint detection system is feasible for 300 mm and 450 mm copper CMP process.

Surface Microdefects Control during Chemical Mechanical Polishing of Silicon Wafers: an Example of in line Manufacturing Process Control

2019 ◽  
Vol 10 (1) ◽  
pp. 75-83
Author(s):  
Gabriella Borionetti ◽  
Alessandro Corradi ◽  
Nicola Mainardi ◽  
Antonio M. Rinaldi ◽  
Keiichi Takami
Keyword(s):  
Process Control ◽  
Chemical Mechanical Polishing ◽  
Manufacturing Process ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Manufacturing Process Control
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