Mechanical Stress Characterization of Shallow Trench Isolation by Kelvin Probe Force Microscopy

ABSTRACTmethod for characterizing the mechanical stress induced in silicon technology is described. Analysis by scanning Kelvin probe force microscopy (SKPM) coupled with finite-element (FE) mechanical strain simulations is performed. The SKPM technique detects variations in the semiconductor work function due to strain influences on the band gap. This technique is then used to analyze the strain induced by shallow trench isolation processes for electrical isolation. The SKPM measurements agree with the FE simulations qualitatively.

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Characterization of the CuGaSe2/ZnSe Interface Using Kelvin Probe Force Microscopy

MRS Proceedings ◽

10.1557/proc-668-h5.4 ◽

2001 ◽

Vol 668 ◽

Cited By ~ 8

Author(s):

S. Sadewasser ◽

Th. Glatzel ◽

M. Rusu ◽

A. Meeder ◽

D. Fuertes Marrón ◽

...

Keyword(s):

Work Function ◽

Chemical Vapor ◽

Kelvin Probe Force Microscopy ◽

Interface Properties ◽

Band Diagram ◽

Kelvin Probe ◽

Force Microscopy ◽

Atomic Force ◽

Chalcopyrite Semiconductors

ABSTRACTTo improve the efficiency of heterostructure solar cells based on chalcopyrite semiconductors a good understanding of the interface properties is crucial. By Kelvin Probe Force Microscopy it is possible to obtain laterally resolved images of the work function of semiconductor surfaces in addition to the topographical information usually obtained by noncontact atomic force microscopy. We studied the CuGaSe2/ZnSe interface prepared by growth of CuGaSe2 onto the (110) face of freshly cleaved ZnSe single crystals using chemical vapor deposition. We observed different work function values for different crystal facets on single CuGaSe2 grains. From the obtained work function data and surface photovoltage measurements a schematic band diagram for the CuGaSe2/ZnSe heterostructure is proposed.

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Work function difference of naphthyl end-capped oligothiophene in different crystal alignments studied by Kelvin probe force microscopy

Organic Electronics ◽

10.1016/j.orgel.2020.106060 ◽

2020 ◽

pp. 106060

Author(s):

Mads Nibe Larsen ◽

Mads Svanborg Peters ◽

Rodrigo Lemos-Silva ◽

Demetrio A. Da Silva Filho ◽

Bjarke Jørgensen ◽

...

Keyword(s):

Work Function ◽

Kelvin Probe Force Microscopy ◽

Kelvin Probe ◽

Force Microscopy ◽

Work Function Difference ◽

Function Difference

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Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses

Nanoscale ◽

10.1039/c9nr10126h ◽

2020 ◽

Vol 12 (15) ◽

pp. 8216-8229

Author(s):

Hong-Ki Kim ◽

Soo In Kim ◽

Seongjun Kim ◽

Nam-Suk Lee ◽

Hoon-Kyu Shin ◽

...

Keyword(s):

Work Function ◽

Structural Properties ◽

Epitaxial Layer ◽

Kelvin Probe Force Microscopy ◽

Kelvin Probe ◽

Force Microscopy ◽

Spectroscopic Analyses ◽

Work Function Difference ◽

Function Difference

In the defective SiC epitaxial layer, the work function variation was observed by Kelvin probe force microscopy (KPFM), and the work function difference came from the variation of polytype and the disordered surface.

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