Mask-Induced Strain in Gaas Layers Grown by Liquid Phase Epitaxial Lateral Overgrowth

1999 ◽  
Vol 570 ◽  
Author(s):  
Z.R. Zytkiewicz ◽  
J. Domagala ◽  
D. Dobosz
Keyword(s):  
Liquid Phase ◽  
Epitaxial Lateral Overgrowth ◽  
X Ray Diffraction ◽  
Liquid Phase Epitaxial ◽  
X Ray ◽  
Vertical Strain ◽  
Lateral Overgrowth ◽  
Gaas Substrates ◽  
Show Evidence ◽  
Vertical Growth Rate

ABSTRACTX-ray diffraction has been used to study the mask-induced strain in GaAs layers grown by the liquid phase epitaxial lateral overgrowth (ELO) on (100) GaAs substrates. SiO2 mask has been investigated to produce seeding areas for the ELO growth. It has been found that SiO2 attracts the ELO layers, which leads to their pronounced bending towards the oxide film and to the appearance of vertical strain in laterally grown parts of ELO. When SiO2 is removed by selective etching this strain disappears. We show evidence that the bending of ELO layers is reduced when the density of substrate dislocations is increased. This is explained as being due to enhancement of the initial vertical growth rate by dislocations supplying steps on the upper surface of ELO.

Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth

1999 ◽  
Vol 86 (4) ◽  
pp. 1965-1969 ◽  
Author(s):  
Z. R. Zytkiewicz ◽  
J. Domagala ◽  
D. Dobosz ◽  
J. Bak-Misiuk
Keyword(s):  
Liquid Phase ◽  
Epitaxial Lateral Overgrowth ◽  
Liquid Phase Epitaxial ◽  
Lateral Overgrowth

Application of tungsten films for substrate masking in liquid phase epitaxial lateral overgrowth of GaAs

2003 ◽  
Vol 38 (35) ◽  
pp. 297-301 ◽  
Author(s):  
D. Dobosz ◽  
Z. R. Zytkiewicz ◽  
T.T. Piotrowski ◽  
E. Kaminska ◽  
E. Papis ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Epitaxial Lateral Overgrowth ◽  
Liquid Phase Epitaxial ◽  
Lateral Overgrowth

Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy

1996 ◽  
Vol 169 (4) ◽  
pp. 613-620 ◽  
Author(s):  
Y. Hayakawa ◽  
S. Iida ◽  
T. Sakurai ◽  
H. Yanagida ◽  
M. Kikuzawa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Gaas Substrates

scholarly journals Aspect ratio of liquid phase epitaxial SiGe∕Si(001) islands as probed by high resolution x-ray diffraction

2004 ◽  
Vol 96 (3) ◽  
pp. 1447-1450 ◽  
Author(s):  
M. Hanke ◽  
M. Schmidbauer ◽  
D. Grigoriev ◽  
R. Köhler
Keyword(s):  
Liquid Phase ◽  
High Resolution ◽  
Aspect Ratio ◽  
X Ray Diffraction ◽  
Liquid Phase Epitaxial ◽  
X Ray

scholarly journals Void Shapes Controlled by Using Interruption-Free Epitaxial Lateral Overgrowth of GaN Films on Patterned SiO2AlN/Sapphire Template

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Yu-An Chen ◽  
Cheng-Huang Kuo ◽  
Li-Chuan Chang ◽  
Ji-Pu Wu
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Air Voids ◽  
X Ray ◽  
Lateral Overgrowth ◽  
Transmission Electron ◽  
Gan Film ◽  
Scanning Electron

GaN epitaxial layers with embedded air voids grown on patterned SiO2AlN/sapphire templates were proposed. Using interruption-free epitaxial lateral overgrowth technology, we realized uninterrupted growth and controlled the shape of embedded air voids. These layers showed improved crystal quality using X-ray diffraction and measurement of etching pits density. Compared with conventional undoped-GaN film, the full width at half-maximum of the GaN (0 0 2) and (1 0 2) peaks decreased from 485 arcsec to 376 arcsec and from 600 arcsec to 322 arcsec, respectively. Transmission electron microscopy results showed that the coalesced GaN growth led to bending threading dislocation. We also proposed a growth model based on results of scanning electron microscopy.

Detailed Characterisations of GaAs Films on Si Obtained by Conformal Growth.

1992 ◽  
Vol 280 ◽  
Author(s):  
B. Gerard ◽  
D. Pribat ◽  
R. Bisaro ◽  
E. Costard ◽  
J. Nagle ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Dislocation Density ◽  
The Self ◽  
Epitaxial Lateral Overgrowth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lateral Overgrowth ◽  
State Of Stress ◽  
Low Dislocation Density ◽  
Gaas Films

ABSTRACTConformal growth is a confined epitaxial lateral overgrowth technique capable of yielding low dislocation density GaAs films on Si. This technique makes extensive use of selective epitaxy and crystal growth is confined by a dielectric cap as well as by the self-passivated Si surface itself.In this paper, we have performed a detailed characterisation of the state of stress of the GaAs films in various configurations (after conformal growth and removal of the seed regions, and after the regrowth of an MBE layer) by photoluminescence measurements at 5K and X-ray diffraction experiments. Although the as-grown conformal films are found in the same state of stress than reference MOCVD GaAs epilayers on Si, we report a significant decrease of this stress after MBE regrowth on conformal films.

High Tc Superconductor Films Grown by the Liquid Phase Epitaxial Technique

1989 ◽  
Vol 169 ◽  
Author(s):  
C. S. Yang ◽  
A. S. Yue
Keyword(s):  
Liquid Phase ◽  
Cross Sections ◽  
X Ray Diffraction ◽  
High Tc ◽  
Liquid Phase Epitaxial ◽  
X Ray ◽  
Diffraction Patterns ◽  
High Degree ◽  
Superconductor Films

AbstractHigh Tc superconducting YBa2Cu3O7 films have been prepared by the Liquid Phase Epitaxial (LPE) technique. The x‐ray diffraction patterns displayed a high degree of (00l) preferred orientations with c‐axes perpendicular to the film surfaces. The in‐situ grown YBa2Cu3O7 films showed zero‐resistivity at 76*K. Examination of the film cross sections by SEM revealed a growth mechanism.

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