Factors Controlling Transport Properties of Interfaces in High-Tc Superconductors

1999 ◽  
Vol 574 ◽  
Author(s):  
H. Hilgenkamp ◽  
R. R. Schulz ◽  
C. W. Schneider ◽  
B. Goetz ◽  
A. Schmehl ◽  
...  

AbstractA comprehensive understanding of the transport properties of interfaces in high-Tc cuprates been obtained by considering their microstructure, the possibility of bending of the electronic band structure in these materials, and the predominant dx2-y2 -symmetry of the order parameter in most high-Tc cuprates. These factors are of central importance for the critical current density and the normal state resistivity of grain boundaries and their dependencies on boundary misorientation and on applied magnetic and electrical fields. In addition, some of these factors play an important role for the transport properties of other interfaces involving high-Tc superconductors, such as superconductors-normal metal contacts.Based on the improved understanding of the mechanisms controlling interface transport properties, we have been able to meet a long-standing challenge in high-Tc superconductivity and have increased the critical current densities of grain boundaries by large factors, using appropriate doping.

2019 ◽  
Vol 58 (9) ◽  
pp. 5533-5542 ◽  
Author(s):  
Patrick Gougeon ◽  
Philippe Gall ◽  
Rabih Al Rahal Al Orabi ◽  
Benoit Boucher ◽  
Bruno Fontaine ◽  
...  

2019 ◽  
Vol 7 (3) ◽  
pp. 1045-1054 ◽  
Author(s):  
Hasbuna Kamila ◽  
Prashant Sahu ◽  
Aryan Sankhla ◽  
Mohammad Yasseri ◽  
Hoang-Ngan Pham ◽  
...  

Figure of merit zT mapping of p-Mg2Si1−xSnx with respect to carrier concentration.


Nanoscale ◽  
2019 ◽  
Vol 11 (38) ◽  
pp. 17894-17903 ◽  
Author(s):  
G. H. Silvestre ◽  
Wanderlã L. Scopel ◽  
R. H. Miwa

(Left) Localization of the electronic states near the Fermi level, and the electronic band structure projected on the S1 and S2 stripes. (Right) Transmission probabilites parallel (y) and perpendicular (x) to the S1/S2 borophene superlattice.


1987 ◽  
Vol 99 ◽  
Author(s):  
K. Tachikawa ◽  
M. Sugimoto ◽  
N. Sadakata ◽  
O. Kohno

Since discovery of the Y-Ba-Cu oxide compound showing superconductivity above liquid nitrogen temperature, intensive study has been under way to clarify nature of the high Tc oxides[l-4]. Much efforts were also made in the field of superconductor applications. A number of studies have been carried out by a powder metallurgical process of Y-Ba-Cu oxide compound wires, although, obtained critical current densities were still low at liquid nitrogen temperature[5–6]. Other techniques for wire fabrication is also being attempted[7–9]. In this study, Y-Ba-Cu oxide superconducting composite tapes were prepared by a diffusion process, which is one of the promising methods to obtain a high critical current density.


Author(s):  
Hua Li ◽  
Gang Li

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.


2009 ◽  
Vol 19 (3) ◽  
pp. 3569-3572 ◽  
Author(s):  
M. Weigand ◽  
S. Speller ◽  
N.A. Rutter ◽  
G.M. Hughes ◽  
C. Grovenor ◽  
...  

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