Electroluminescence Devices with CdS and CdS:Mn Nanoparticles and Polymer Blends

1999 ◽  
Vol 581 ◽  
Author(s):  
Ch. Brugger ◽  
S. Tasch ◽  
M. Lal ◽  
P.N. Prasad ◽  
G. Leising

ABSTRACTWe have investigated the photophysical properties of surface capped CdS and CdS:Mn nanoparticles in the form of spin coated thin films of the pure nanoparticles and nanoparticle -polymer blends. The organic capping reagent was p-thiocresol. Electroluminescence (EL) devices were fabricated and characterized by their current/voltage characteristics and EL emission performance. This is to our knowledge the first report on Mn doped CdS nanoparticles applied in EL devices with a single layer device structure (ITO/CdS:Mn/Al). Photoluminescence (PL) and PL excitation measurements were performed on CdS:Mn nanoparticles in pyridine dispersion and on thin films. The PL excitation spectrum shows a narrow peak at 390nm. Excitation at this wavelength yields a broad PL spectrum spanning from about 450 to 700nm, which is dominated by a strong emission band at 585nm. This emission is attributed to transitions involving Mn levels in previous works. The EL emission peak is shifted to the red compared to the PL emission spectra. The characteristics and performance of these new types of EL devices will be presented and discussed.

2004 ◽  
Vol 820 ◽  
Author(s):  
Elena A. Guliants ◽  
Barbara A. Haruff ◽  
James R. Gord ◽  
Christopher E. Bunker

AbstractIn recent years, II-VI compound semiconductor nanoparticles synthesized in a liquid solution have been shown to possess unique optoelectronic properties which are highly attractive for the fabrication of various sensors based on the optical signal readout scheme. The challenge has been to immobilize these nanoparticles into films on solid surfaces, i.e. on a chip, so that they do not suffer any property deterioration as a sensing medium. In the presented work, synthesis of CdS nanoparticles in reverse micelle solution using AOT surfactant as a stabilizer has led to particles with relatively bright photoemission identified as originating from both shallow and deep traps inside the bandgap. Moreover, slightly altering the preparation procedure has produced samples with two distinctive crystal structures. Both types of CdS nanoparticles suspended in commonly utilized solvents such as chloroform and hexane were subject to chemical quenching when various organic compounds were introduced into the solution, demonstrating the sensitivity of trap states to their chemical environment. However, the two structures have shown very different optical properties. While post-synthesis treatment had no effect on one type of particle, the other type was able to undergo a photochemical reaction via prolonged UV irradiation, which resulted in an increased luminescence quantum yield ÖL from 2% to 14%. The same particle type was also responsive to thermal treatment, showing even higher values of ÖL (∼40%). The CdS/AOT particles have been cast into thin films by spin-coating on a Si wafer. Coating parameters have been investigated in order to achieve optimal control over the film thickness, uniformity, overall film durability, etc. These nanostructured films capped with various porous polymeric and sol-gel protective coatings were exposed to a series of organic compounds. Photoluminescence data collected for these samples served for identification of the compounds and their concentrations. This paper offers the discussion of photophysical response in CdS nanoparticle-based thin films with respect to development of novel nanostructured opto-chemical sensors.


2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.


Materials ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 589
Author(s):  
Jakub Ševčík ◽  
Pavel Urbánek ◽  
Barbora Hanulíková ◽  
Tereza Čapková ◽  
Michal Urbánek ◽  
...  

In recent work, the boron hydride anti-B18H22 was announced in the literature as a new laser dye, and, along with several of its derivatives, its solutions are capable of delivering blue luminescence with quantum yields of unity. However, as a dopant in solid polymer films, its luminescent efficiencies reduce dramatically. Clarification of underlying detrimental effects is crucial for any application and, thus, this contribution makes the initial steps in the use of these inorganic compounds in electrooptical devices based on organic polymer thin films. The photoluminescence behavior of the highly luminescent boron hydrides, anti-B18H22 and 3,3′,4,4′-Et4-anti-B18H18, were therefore investigated. The quantum yields of luminescence and photostabilities of both compounds were studied in different solvents and as polymer-solvent blends. The photophysical properties of both boranes are evaluated and discussed in terms of their solvent-solute interactions using photoluminescence (PL) and NMR spectroscopies. The UV degradability of prepared thin films was studied by fluorimetric measurement. The effect of the surrounding atmosphere, dopant concentration and the molecular structure were assessed.


1992 ◽  
Vol 25 (10) ◽  
pp. 2619-2623 ◽  
Author(s):  
Lei Jong ◽  
Eli M. Pearce ◽  
T. K. Kwei ◽  
W. A. Hamilton ◽  
G. S. Smith ◽  
...  

1998 ◽  
Vol 31 (19) ◽  
pp. 6515-6520 ◽  
Author(s):  
Weng-Kou Wen ◽  
Jwo-Huei Jou ◽  
Hua-Shu Wu ◽  
Chien-Li Cheng

1988 ◽  
Vol 3 (12) ◽  
pp. 838-847
Author(s):  
F. Kugiya ◽  
M. Suzuki ◽  
K. Yoshida ◽  
O. Kitakami

1998 ◽  
Vol 158 (1-6) ◽  
pp. 221-230 ◽  
Author(s):  
A. Penzkofer ◽  
E. Drotleff ◽  
W. Holzer

1995 ◽  
Vol 401 ◽  
Author(s):  
L. Ryen ◽  
E. Olssoni ◽  
L. D. Madsen ◽  
C. N. L. Johnson ◽  
X. Wang ◽  
...  

AbstractEpitaxial single layer (001) SrTiO3 films and an epitaxial Yba2Cu3O7-x/SrTiO3 multilayer were dc and rf sputtered on (110)rhombohedral LaAIO3 substrates. The microstructure of the films was characterised using transmission electron microscopy. The single layer SrTiO3 films exhibited different columnar morphologies. The column boundaries were due to the lattice mismatch between film and substrate. The boundaries were associated with interfacial dislocations at the film/substrate interface, where the dislocations relaxed the strain in the a, b plane. The columns consisted of individual subgrains. These subgrains were misoriented with respect to each other, with different in-plane orientations and different tilts of the (001) planes. The subgrain boundaries were antiphase or tilt boundaries.The individual layers of the Yba2Cu3O7-x/SrTiO3 multilayer were relatively uniform. A distortion of the SrTiO3 unit cell of 0.9% in the ‘001’ direction and a Sr/Ti ratio of 0.62±0.04 was observed, both in correspondence with the single layer SrTiO3 films. Areas with different tilt of the (001)-planes were also present, within each individual SrTiO3 layer.


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