First Demonstration of a Periodically Loaded Line Phase Shifter Using BST Capacitors

1999 ◽  
Vol 603 ◽  
Author(s):  
Amit S. Nagra ◽  
Troy R. Taylor ◽  
Padmini Periaswamy ◽  
James Speck ◽  
Robert A. York
Keyword(s):  
Phase Shift ◽  
Insertion Loss ◽  
Parallel Plate ◽  
Room Temperature ◽  
Phase Shifter ◽  
X Band ◽  
Fabrication Procedure ◽  
Room Temperature Operation

AbstractPeriodically loaded line phase shifter circuits using voltage tunable BaSrTiO3 (BST) parallel plate capacitors have been demonstrated at X-band. The first such phase shifter circuit was capable of 100° of phase shift with an insertion loss of 7.6 dB at 10 GHz. Subsequently, the monolithic fabrication procedure was refined resulting in an improved phase shifter circuit with 200° of phase shift and an insertion loss of 6.2 dB at 10 GHz. In addition to promising loss performance (32°/dB) at 10 GHz, the circuits reported here have several desirable features such as moderate control voltages (20 V), room temperature operation, and compatibility with monolithic fabrication techniques.

scholarly journals Analysis and Optimization of Thin-Film Ferroelectric Phase Shifters

1999 ◽  
Vol 603 ◽  
Author(s):  
R. R. Romanofsky ◽  
F. W. Van Keuls ◽  
J. D. Warner ◽  
C. H. Mueller ◽  
S. A. Alterovitz ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Room Temperature ◽  
Phase Shifter ◽  
Ferroelectric Phase ◽  
Phase Shifters ◽  
Phased Array Antenna ◽  
New Type ◽  
Novel Devices ◽  
K Band

AbstractMicrowave phase shifters have been fabricated from (YBa2Cu3 O7-δ or Au)/SrTiO3 and Au/BaxSr1−xTiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counterparts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is ≈5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

Design & Modeling of 6-Bit Low Loss Ka Band Distributed MEMS Phase Shifter on GaAs

2011 ◽  
Vol 403-408 ◽  
pp. 4179-4183
Author(s):  
Anesh K. Sharma ◽  
Ashu K. Gautam ◽  
D.V.K. Sastry ◽  
S.G. Singh
Keyword(s):  
Phase Shift ◽  
Insertion Loss ◽  
Phase Shifter ◽  
Structural Parameters ◽  
Coplanar Waveguide ◽  
Actuation Voltage ◽  
Ka Band ◽  
Rf Systems ◽  
Total Phase ◽  
Digital Phase Shifter

This paper presents the design & modeling of distributed MEMS phase shifter for Ka band RF systems. The phase shift can be achieved by periodically placing the MEMS bridge variable capacitors as per Bragg frequency criteria on coplanar waveguide (CPW) using GaAs substrate. The EM & electromechanical simulation are carried out with various structural parameters to optimize the designs. The novelties like low insertion loss, low actuation voltage with distributed actuation pads & separate DC and RF are used to make the design unique. The EM simulations are carried out with HFSS and an insertion loss of -3.49 dB at 36GHz for a total Phase shift of 360 deg. was achieved with return loss of - 20.6 dB over a frequency band 34-38 GHz. The electromechanical simulations are carried to achieve the low actuation voltage of 10.3V. The significance of this study is the realization of the digital phase shifter through DMTL approach.

Design and experimental analysis of MEMS-based Ku band phase shifter

Circuit World ◽  
2018 ◽  
Vol 44 (3) ◽  
pp. 115-124 ◽  
Author(s):  
Prithivi Rajan V. ◽  
Punitha A.
Keyword(s):  
Phase Shift ◽  
Insertion Loss ◽  
Phase Shifter ◽  
Open Circuit ◽  
Low Loss ◽  
Maximum Phase ◽  
Content Type ◽  
Mems Switch ◽  
Low Insertion Loss ◽  
Ku Band

Purpose This paper aims to design a radio frequency micro-electro-mechanical system (RF MEMS)-based phase shifter using chamfered coplanar waveguide (CPW) transmission line (t-line) with open-circuit interdigital metal–air–metal (ID MAM) capacitors. Design/methodology/approach The proposed phase shifter achieves maximum differential phase shift with low loss at Ku band. The phase shifter is built with one switchable fixed-fixed beam (MEMS switch) on chamfered CPW t-line in series with two planar open-circuit ID MAM capacitors. An equivalent circuit model for the proposed phase shifter is derived, and its parameters are extracted using an electromagnetic (EM) solver. Findings The MEMS switch is actuated using an electrostatic method with the calculated residual stress of 44.26 MPa. The fabricated phase shifter exhibits low insertion loss, close to 0.14 dB at 17 GHz, with the maximum phase shift of 15.06°. The return loss is greater than 23 dB between 12 and 18 GHz. Originality/value This phase shifter presents a promising solution for low loss applications in the Ku band with a maximum phase shift. As the maximum phase shift of 15.06° is achieved for a unit cell with low insertion loss, the phase shifter is found to be feasible for modern electronically tunable phased arrays used for satellite communication and radar systems.

An X-band full-360° reflection type phase shifter with low insertion loss

2012 ◽  
Author(s):  
Wei-Tsung Li ◽  
Yen-Hung Kuo ◽  
Yi-Ming Wu ◽  
Jen-Hao Cheng ◽  
Tian-Wei Huang ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Phase Shifter ◽  
Type Phase ◽  
X Band ◽  
Low Insertion Loss
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