Low insertion loss, high power handling and good performance 90o phase shifter for X-band radar application

2014 ◽  
Vol 82 (1) ◽  
pp. 181-187
Author(s):  
Babak Menbari ◽  
Massoud Dousti
Author(s):  
Wei-Tsung Li ◽  
Yen-Hung Kuo ◽  
Yi-Ming Wu ◽  
Jen-Hao Cheng ◽  
Tian-Wei Huang ◽  
...  

Author(s):  
Aparna B. Barbadekar ◽  
Pradeep M. Patil

Abstract The paper proposes a system consisting of novel programmable system on chip (PSoC)-controlled phase shifters which in turn guides the beam of an antenna array attached to it. Four antennae forming an array receive individual inputs from the programmable phase shifters (IC 2484). The input to the PSoC-based phase shifter is provided from an optimized 1:4 Wilkinson power divider. The antenna consists of an inverted L-shaped dipole on the front and two mirrored inverted L-shaped dipoles mounted on a rectangular conductive structure on the back which resonates in the ISM/Wi-Fi band (2.40–2.48 GHz). The power divider is designed to provide the feed to the phase shifter using a beamforming network while ensuring good isolation among the ports. The power divider has measured S11, S21, S31, S41, and S51 to be −14, −6.25, −6.31, −6.28, and −6.31 dB, respectively at a frequency of 2.45 GHz. The ingenious controller is designed in-house using a PSoC microcontroller to regulate the control voltage of individual phase shifter IC and generate progressive phase shifts. To validate the calibration of the in-house designed control circuit, the phased array is simulated using $s_p^2$ touchstone file of IC 2484. This designed control circuit exhibits low insertion loss close to −8.5 dB, voltage standing wave ratio of 1.58:1, and reflection coefficient (S11) is −14.36 dB at 2.45 GHz. Low insertion loss variations confirm that the phased-array antenna gives equal amplitude and phase. The beamforming radiation patterns for different scan angles (30, 60, and 90°) for experimental and simulated phased-array antenna are matched accurately showing the accuracy of the control circuit designed. The average experimental and simulated gain is 13.03 and 13.48 dBi respectively. The in-house designed controller overcomes the primary limitations associated with the present electromechanical phased array such as cost weight, size, power consumption, and complexity in design which limits the use of a phased array to military applications only. The current study with novel design and enhanced performance makes the system worthy of the practical use of phased-array antennas for common society at large.


2009 ◽  
Vol 1 (4) ◽  
pp. 339-345 ◽  
Author(s):  
Vincenzo Alleva ◽  
Andrea Bettidi ◽  
Walter Ciccognani ◽  
Marco De Dominicis ◽  
Mauro Ferrari ◽  
...  

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.


1999 ◽  
Vol 603 ◽  
Author(s):  
Amit S. Nagra ◽  
Troy R. Taylor ◽  
Padmini Periaswamy ◽  
James Speck ◽  
Robert A. York

AbstractPeriodically loaded line phase shifter circuits using voltage tunable BaSrTiO3 (BST) parallel plate capacitors have been demonstrated at X-band. The first such phase shifter circuit was capable of 100° of phase shift with an insertion loss of 7.6 dB at 10 GHz. Subsequently, the monolithic fabrication procedure was refined resulting in an improved phase shifter circuit with 200° of phase shift and an insertion loss of 6.2 dB at 10 GHz. In addition to promising loss performance (32°/dB) at 10 GHz, the circuits reported here have several desirable features such as moderate control voltages (20 V), room temperature operation, and compatibility with monolithic fabrication techniques.


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