Post-Oxidation Enhanced Diffusion of Low-Energy Implanted Boron in Ultra-Shallow P+/N Junctions Formation
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AbstractIn this paper, we report for the first time the effect of sacrificial oxide (sacox) on the boron diffusion in ultra-shallow P+/N junctions. It is shown that the boron diffusivity is enhanced when low energy implantations are performed through sacrificial oxide. The various experimental data lead to conclude that the Post-Oxidation Enhanced Diffusion (POED) is due to a « mirror effect » seen by the Si interstitials incoming into the sacox layer. POED occurs even for sacox as thin as 1.5 nm. From a simple model, the reflection coefficient is estimated to be about 100 % for a 2.5 nm-thick sacox.
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1969 ◽
Vol 24
(12)
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pp. 2000-2003
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