Analysis of Experimental Data for Neutralization of Low-Energy Ions at a Solid Surface.

1986 ◽  
Author(s):  
Hai-Woong Lee ◽  
Thomas F. George
Keyword(s):  
Experimental Data ◽  
Solid Surface ◽  
Low Energy ◽  
Low Energy Ions

Analysis of experimental data for neutralization of low-energy ions at a solid surface

1986 ◽  
Vol 172 (1) ◽  
pp. A339
Author(s):  
Hai-Woong Lee ◽  
Thomas F. George
Keyword(s):  
Experimental Data ◽  
Solid Surface ◽  
Low Energy ◽  
Low Energy Ions

Analysis of experimental data for neutralization of low-energy ions at a solid surface

1986 ◽  
Vol 172 (1) ◽  
pp. 211-229 ◽  
Author(s):  
Hai-Woong Lee ◽  
Thomas F. George
Keyword(s):  
Experimental Data ◽  
Solid Surface ◽  
Low Energy ◽  
Low Energy Ions

Scattering of low-energy ions from a solid surface: Transport theory calculation of the reflection coefficient

2007 ◽  
Vol 201 (19-20) ◽  
pp. 8420-8423 ◽  
Author(s):  
K. Khalal-Kouache ◽  
A. Mekhtiche ◽  
A.C. Chami ◽  
M. Boudjema
Keyword(s):  
Reflection Coefficient ◽  
Solid Surface ◽  
Transport Theory ◽  
Low Energy ◽  
Surface Transport ◽  
Theory Calculation ◽  
Low Energy Ions

Neutralization Rates for Low-Energy Ions Scattered From Solid Surfaces

1986 ◽  
Vol 74 ◽  
Author(s):  
Elliott A. Eklund ◽  
Richard S. Daley ◽  
Judy H. huang ◽  
R. Stanley Williams
Keyword(s):  
Experimental Data ◽  
Surface Structure ◽  
Low Energy ◽  
Solid Surfaces ◽  
Angular Distributions ◽  
Ion Scattering ◽  
First Order ◽  
Decay Model ◽  
Low Energy Ions

AbstractCalculations of the angular distributions of scattered ions were used to simulate impact collision ion scattering spectrometry (ICISS) experiments. The calculations were performed first for 2–keV Na+ ions incident on the Pt(111) surface in the <112> azimuth. The fitting of these calculations to the experimental data provided information about the surface structure of the sample and the trajectories of the incident ions. The inclusion of a first-order decay model for Auger neutralization with the calculations for Na+ allowed the simulation of 2-keV Ne+ ions in the ICISS mode on the same Pt surface. From these simulations it was possible to extract the Auger neutralization halflife for Ne+, found to be 1.30 ± 0.10 femtoseconds.

scholarly journals Low-Energy Optical Conductivity of TaP: Comparison of Theory and Experiment

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 567
Author(s):  
Alexander Yaresko ◽  
Artem V. Pronin
Keyword(s):  
Experimental Data ◽  
Optical Conductivity ◽  
Low Energy ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Natural Explanation ◽  
Weyl Semimetal ◽  
Unintentional Doping ◽  
Mott Formula ◽  
Theory And Experiment

The ab-plane optical conductivity of the Weyl semimetal TaP is calculated from the band structure and compared to the experimental data. The overall agreement between theory and experiment is found to be best when the Fermi level is slightly (20 to 60 meV) shifted upwards in the calculations. This confirms a small unintentional doping of TaP, reported earlier, and allows a natural explanation of the strong low-energy (50 meV) peak seen in the experimental ab-plane optical conductivity: this peak originates from transitions between the almost parallel non-degenerate electronic bands split by spin-orbit coupling. The temperature evolution of the peak can be reasonably well reproduce by calculations using an analog of the Mott formula.

Ion-Assisted Surface Processing of Electronic Materials

MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 52-57 ◽  
Author(s):  
S.T. Picraux ◽  
E. Chason ◽  
T.M. Mayer
Keyword(s):  
Plasma Etching ◽  
Electronic Materials ◽  
Low Energy ◽  
Surface Processing ◽  
Wave Guides ◽  
Side Walls ◽  
Wet Chemical ◽  
Low Energy Ions ◽  
Metal Layers ◽  
Defect Densities

Why are low-energy ions relevant to the surface processing of electronic materials? The answer lies in the overriding trend of miniaturization in microelectronics. The achievement of these feats in ultrasmall architecture has required surface processing capabilities that allow layer addition and removal with incredible precision. The resulting benefits of greater capacity and speed at a plummeting cost per function are near legendary.The ability of low-energy ions to enhance the precision of surface etching, cleaning, and deposition/growth processes (Figure 1) provides one basis for the interest in ion-assisted processes. Low-energy ions are used, for example, to enhance the sharpness of side walls in plasma etching and to improve step coverage by metal layers in sputter deposition. Emerging optoelectronic applications such as forming ridges for wave-guides and ultrasmooth vertical surfaces for lasers further extend piesent requirements, and low-energy ions again provide one tool to help in this area of ultraprecise materials control. Trends associated with the decreased feature size include the movement from wet chemical processing to dry processing, the continuing need for reductions in defect densities, and the drive toward reduced temperatures and times in process steps.How do the above trends focus interest on studies of low-energy ion-assisted processes? In current applications, these trends are driving the need for increased atomic-level understanding of the ion-enhancement mechanisms, for example, in reactive ion etching to minimize defect production and enhance surface chemical reactions.

Modelling Interaction Cross Sections for Intermediate and Low Energy Ions

2002 ◽  
Vol 99 (1) ◽  
pp. 49-51 ◽  
Author(s):  
L. H. Toburen ◽  
J. L. Shinpaugh ◽  
E. L. B. Justiniano
Keyword(s):  
Cross Sections ◽  
Low Energy ◽  
Low Energy Ions ◽  
Interaction Cross Sections

Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

1991 ◽  
Vol 236 ◽  
Author(s):  
Nicole Herbots ◽  
O.C. Hellman ◽  
O. Vancauwenberghe
Keyword(s):  
Thin Film ◽  
Chemical Reactions ◽  
Degrees Of Freedom ◽  
Film Growth ◽  
Film Formation ◽  
Chemical Reactivity ◽  
Ion Beam ◽  
Low Energy ◽  
Low Energy Ions ◽  
Beam Deposition

AbstractThree important effects of low energy direct Ion Beam Deposition (IBD) are the athermal incorporation of material into a substrate, the enhancement of atomic mobility in the subsurface, and the modification of growth kinetics it creates. All lead to a significant lowering of the temperature necessary to induce epitaxial growth and chemical reactions. The fundamental understanding and new applications of low temperature kinetics induced by low energy ions in thin film growth and surface processing of semiconductors are reviewed. It is shown that the mechanism of IBD growth can be understood and computed quantitatively using a simple model including ion induced defect generation and sputtering, elastic recombination, thermal diffusion, chemical reactivity, and desorption The energy, temperature and dose dependence of growth rate, epitaxy, and chemical reaction during IBD is found to be controlled by the net recombination rate of interstitials at the surface in the case of epitaxy and unreacted films, and by the balance between ion beam decomposition and phase formation induced by ion beam generated defects in the case of compound thin films. Recent systematic experiments on the formation of oxides and nitrides on Si, Ge/Si(100), heteroepitaxial SixGe1−x/Si(100) and GaAs(100) illustrate applications of this mechanism using IBD in the form of Ion Beam Nitridation (IBN), Ion Beam Oxidation (IBO) and Combined Ion and Molecular beam Deposition (CIMD). It is shown that these techniques enable (1) the formation of conventional phases in conditions never used before, (2) the control and creation of properties via new degrees of freedom such as ion energy and lowered substrate temperatures, and (3) the formation of new metastable heterostructures that cannot be grown by pure thermal means.

Cross-section scaling for track structure simulations of low-energy ions in liquid water

2015 ◽  
Vol 166 (1-4) ◽  
pp. 15-18 ◽  
Author(s):  
E. Schmitt ◽  
W. Friedland ◽  
P. Kundrát ◽  
M. Dingfelder ◽  
A. Ottolenghi
Keyword(s):  
Cross Section ◽  
Liquid Water ◽  
Low Energy ◽  
Track Structure ◽  
Low Energy Ions
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