Effects of Curing Temperature on the Mechanical Reliability of Low Dielectric-Constant Spin-on-Glasses

2000 ◽  
Vol 612 ◽  
Author(s):  
Yvete Toivola ◽  
Robert F. Cook ◽  
Chandan Saha
Keyword(s):  
Dielectric Constant ◽  
High Stress ◽  
Curing Temperature ◽  
Low Dielectric Constant ◽  
Mechanical Reliability ◽  
High Modulus ◽  
Capacitance Measurements ◽  
Low Dielectric ◽  
Low Modulus ◽  
Film Dielectric

AbstractThe variations in the mechanical properties of a commercial low-k silsesquioxane material with curing temperature are examined, focusing on the transition from the low modulus, high stress, under-cured state to the high modulus, low stress, over-cured state. Film modulus and hardness are determined by instrumented nanoindentation and film dielectric constant is determined by ac capacitance measurements of metal dot structures. The mechanical behavior is correlated with changes in molecular structure via infrared spectroscopy. An implication of the results is that there is an intermediate curing temperature for optimum silsesquioxane interconnection performance.

Characterization of Spin -on Glasses by Microindentation.

1998 ◽  
Vol 511 ◽  
Author(s):  
Eva E. Simonyi ◽  
K.-W. Lee ◽  
Robert F. Cook ◽  
Eric G. Liniger ◽  
James Speidell
Keyword(s):  
Dielectric Constant ◽  
Life Expectancy ◽  
Polymeric Materials ◽  
Curing Temperature ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Bond Density ◽  
Microelectronics Industry ◽  
Preparation Parameter

ABSTRACTSpin-on glasses are candidates in the microelectronics industry as low dielectric constant insulating layers. Spin-on glasses are very brittle materials. This paper discusses measurement problems as relevant to the characterization of a brittle material by the indentation technique. As for all polymeric materials curing temperature is the most important preparation parameter. There is a correlation between hardness, Young's modulus, the onset of cracking with curing temperature. This dependence on curing temperature is also expressed by the change in Si-H bond density as shown by FTIR data. Life expectancy or aging characteristics were also investigated for these features. As an example results on silsesquioxane spin -on glasses are presented.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Defect free monolayer and bilayer graphene exfoliated by solvent with low dielectric constant

2020 ◽  
Author(s):  
Vedanki ◽  
Chandrabhan Dohare ◽  
Pawan KumarSrivastava ◽  
Premlata Yadav ◽  
Subhasis Ghosh
Keyword(s):  
Dielectric Constant ◽  
Bilayer Graphene ◽  
Low Dielectric Constant ◽  
Low Dielectric
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