Structural Characterization Of Laser Lift-Off GaN

2000 ◽  
Vol 617 ◽  
Author(s):  
Eric A. Stach ◽  
M. Kelsch ◽  
W.S. Wong ◽  
E.C. Nelson ◽  
T. Sands ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Characterization ◽  
High Resolution Electron Microscopy ◽  
Economic Benefits ◽  
Thin Layers ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Lift Off ◽  
Microscopy Techniques

AbstractLaser lift-off and bonding has been demonstrated as a viable route for the integration of III-nitride opto-electronics with mainstream device technology. A critical remaining question is the structural and chemical quality of the layers following lift-off. In this paper, we present detailed structural and chemical characterization of both the epitaxial layer and the substrate using standard transmission electron microscopy techniques. Conventional diffraction contrast and high resolution electron microscopy indicate that the structural alteration of the material is limited to approximately the first 50 nm. Energy dispersive electron spectroscopy line profiles show that intermixing is also confined to similar thicknesses. These results indicate that laser lift-off of even thin layers is likely to result in materials suitable for device integration. Additionally, because the damage to the sapphire substrate is minimal, it should be possible to polish and re-use these substrates for subsequent heteroepitaxial growths, resulting in significant economic benefits.

Interface structures in polycrystalline ceramic materials

1986 ◽  
Vol 44 ◽  
pp. 468-471
Author(s):  
K. J. Morrissey
Keyword(s):  
Electron Microscopy ◽  
Analytical Electron Microscopy ◽  
Physical And Mechanical Properties ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Polycrystalline Materials ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Interface Structures

Grain boundaries and interfaces play an important role in determining both physical and mechanical properties of polycrystalline materials. To understand how the structure of interfaces can be controlled to optimize properties, it is necessary to understand and be able to predict their crystal chemistry. Transmission electron microscopy (TEM), analytical electron microscopy (AEM,), and high resolution electron microscopy (HREM) are essential tools for the characterization of the different types of interfaces which exist in ceramic systems. The purpose of this paper is to illustrate some specific areas in which understanding interface structure is important. Interfaces in sintered bodies, materials produced through phase transformation and electronic packaging are discussed.

AlN Nanorods synthesized by a Mechanothermal Process

2011 ◽  
Vol 1288 ◽  
Author(s):  
G. Rosas ◽  
J. Chihuaque ◽  
C. Patiño-Carachure ◽  
R. Esparza ◽  
R. Pérez
Keyword(s):  
Electron Microscopy ◽  
Mechanical Milling ◽  
Annealing Treatment ◽  
High Resolution Electron Microscopy ◽  
Dynamical Theory ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Structural Configurations ◽  
Simulated Images

ABSTRACTWell-crystallized AlN nanorods have been produced by mechanical milling and subsequent annealing treatment of the milling powders (mechanothermal process). High purity AlN powders were used as the starting material. Mechanical milling was carried out in a vibratory SPEX mill for 30 h, using vials and balls of silicon nitride. The annealing treatment was carried out at 1200 ºC for 10 min. The characterization of the samples was performed by X-ray diffractometry and transmission electron microscopy (TEM). TEM observations indicated that the synthesized nanorods consisted of 30 nm in diameter and 100 nm in length. High resolution electron microscopy observations have been used in the structural characterization. AlN nanorods exhibit a well-crystallized structure. The growing direction of the nanorods is close to the [001] direction. The structural configurations have been explored through comparisons between experimental HREM images and theoretically simulated images obtained with the multislice method of the dynamical theory of electron diffraction.

scholarly journals TEM Studies of Precipitate Growth at the Atomic Level

1985 ◽  
Vol 62 ◽  
Author(s):  
J. M. Howe ◽  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Atomic Level ◽  
Atomic Structures ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Precipitate Growth ◽  
Convergent Beam ◽  
Microscopy Techniques

ABSTRACTRecent advances in transmission electron microscopy instrumentation and technique now make it possible to study the shape-evolution of precipitates in metallic alloys at the atomic level. This investigation demostrates how a combination of transmission electron microscopy techniques; namely, high-resolution electron microscopy, image simulation, energy-dispersive x-ray spectroscopy and convergent-beam electron diffraction are used to characterize the atomic structures, chemistry and growth mechanisms of γ' precipitate plates in an Al-4.2 a/o Ag alloy aged for 30 min. at 350°C. The complimentary information obtained from each of these techniques allows modelling of the growth process at the atomic level, thus providing insight into the basic precipitation behavior of alloys.

Characterization of ErAs/GaAs and GaAs/ErAs/GaAs Structures

1989 ◽  
Vol 160 ◽  
Author(s):  
Jane G. Zhu ◽  
Chris J. Palmstrøm ◽  
Suzanne Mounier ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Gaas Layer ◽  
Misfit Dislocations ◽  
Weak Beam ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Small Grains ◽  
Major Defect

AbstractA series of ErAs/GaAs and GaAs/ErAs/GaAs epilayers have been grown on (100) GaAs substrates by molecular-beam epitaxy. Misfit dislocations at the ErAs/GaAs interface have been analyzed using the weak-beam technique of transmission electron microscopy. The microstructure of GaAs/ErAs/GaAs layers have been characterized using conventional and high-resolution electron microscopy. Twinning inside the upper GaAs layer is the major defect. Although the desired epitactic (100) GaAs on (100) ErAs does dominate, small grains of GaAs with (111) or {122} orientations have been observed at the GaAs/ErAs heterojunction.

Synthesis and characterization of antimony oxide nanoparticles

2001 ◽  
Vol 16 (3) ◽  
pp. 803-805 ◽  
Author(s):  
Zaoli Zhang ◽  
Lin Guo ◽  
Wendong Wang
Keyword(s):  
Electron Microscopy ◽  
Water Solution ◽  
High Resolution Electron Microscopy ◽  
Antimony Oxide ◽  
Oxide Nanoparticles ◽  
Internal Standards ◽  
Transmission Electron ◽  
Initial Stage ◽  
Resolution Electron

Antimony oxide nanoparticles were synthesized in the presence of the polyvinyl alcohol in water solution through the reaction between SbCl3 and NaOH. The size of the particle ranges from 10 to 80 nm, and the largest one can even reach 200 nm, which may begin to grow in the initial stage of the reflux. Transmission electron microscopy and high-resolution electron microscopy (HREM) were used to characterize the microstructure of these nanoparticles. Using silicon single crystals as internal standards, the polycrystalline diffraction pattern analysis shows only presence of cubic Sb2O3 phase. The bright-field micrograph displays that the particles may have various polyhedral configurations. HREM results show that the particles are crystallographically perfect. Moreover, the formation mechanism of nanoparticles is discussed.

Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN

1996 ◽  
Vol 423 ◽  
Author(s):  
S. Ruvimov ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
K. J. Duxstad ◽  
E. E. Hailer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Ohmic Contacts ◽  
High Resolution Electron Microscopy ◽  
Structure Characterization ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Thin Polycrystalline

AbstractTransmission electron microscopy has been applied to characterize the structure of Ti/Al and Ti/Al/Ni/Au ohmic contacts on n-type GaN (˜1017 cm−3 ) epitaxial layers. A thin polycrystalline cubic TiN layer epitaxially matched to the (0001) GaN surface was detected at the interface with the GaN substrate. This layer was studied in detail by electron diffraction and high resolution electron microscopy. The orientation relationship between the cubic TiN and the GaN was found to be: {111}TiN//{00.1}GaN, [110]TiN//[11.0]GaN, [112 ]TiN//[ 10.0]GaN. The formation of this cubic TiN layer results in an excess of N vacancies in the GaN close to the interface which is considered to be the reason for the low resistance of the contact.

3D electron microscopy investigations of human dentin at the micro/nano-scale using focused ion beam based nanostructuring

RSC Advances ◽  
2015 ◽  
Vol 5 (10) ◽  
pp. 7196-7199 ◽  
Author(s):  
Meltem Sezen ◽  
Sina Sadighikia
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Electron Microscopy ◽  
High Definition ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Human Dentin ◽  
Microscopy Techniques

In this study, high resolution electron microscopy techniques, such as Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM) and High Resolution Transmission Electron Microscopy (HRTEM) allowed for revealing micro/nano features within human dentin with high definition and accuracy.

High-resolution electron microscopy of nanostructured materials

1995 ◽  
Vol 53 ◽  
pp. 172-173
Author(s):  
M. José-Yacamán
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Grain Boundaries ◽  
Nanostructured Materials ◽  
High Resolution Electron Microscopy ◽  
Hrem Image ◽  
Small Particles ◽  
Resolution Electron ◽  
Nanophase Materials

Electron microscopy is a fundamental tool in materials characterization. In the case of nanostructured materials we are looking for features with a size in the nanometer range. Therefore often the conventional TEM techniques are not enough for characterization of nanophases. High Resolution Electron Microscopy (HREM), is a key technique in order to characterize those materials with a resolution of ~ 1.7A. High resolution studies of metallic nanostructured materials has been also reported in the literature. It is concluded that boundaries in nanophase materials are similar in structure to the regular grain boundaries. That work therefore did not confirm the early hipothesis on the field that grain boundaries in nanostructured materials have a special behavior. We will show in this paper that by a combination of HREM image processing, and image calculations, it is possible to prove that small particles and coalesced grains have a significant surface roughness, as well as large internal strain.

High Resolution Transmission Electron Microscopy of an automobile catalytic converter

1990 ◽  
Vol 48 (4) ◽  
pp. 242-243
Author(s):  
Jan-Olle Malm ◽  
Jan-Olov Bovin
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Catalytic Converter ◽  
Active Material ◽  
Image Intensifier ◽  
High Resolution Electron Microscopy ◽  
Detailed Knowledge ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Atomic Surface

Understanding of catalytic processes requires detailed knowledge of the catalyst. As heterogeneous catalysis is a surface phenomena the understanding of the atomic surface structure of both the active material and the support material is of utmost importance. This work is a high resolution electron microscopy (HREM) study of different phases found in a used automobile catalytic converter.The high resolution micrographs were obtained with a JEM-4000EX working with a structural resolution better than 0.17 nm and equipped with a Gatan 622 TV-camera with an image intensifier. Some work (e.g. EDS-analysis and diffraction) was done with a JEM-2000FX equipped with a Link AN10000 EDX spectrometer. The catalytic converter in this study has been used under normal driving conditions for several years and has also been poisoned by using leaded fuel. To prepare the sample, parts of the monolith were crushed, dispersed in methanol and a drop of the dispersion was placed on the holey carbon grid.

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