Electrical Properties of InN Grown by RF-MBE

2000 ◽  
Vol 639 ◽  
Author(s):  
Yoshiki Saito ◽  
Nobuaki Teraguchi ◽  
Akira Suzuki ◽  
Tomohiro Yamaguchi ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Carrier Density ◽  
Room Temperature ◽  
High Energy ◽  
Rf Plasma ◽  
Plasma Power ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTInN films with excellent surface morphology were grown by controlled the V/III ratio of InN epitaxal layer. It was found they were single crystal of InN films with wurtzite structure by X-ray diffraction (XRD) measurement and reflection high-energy electron diffraction (RHEED) observation. Hall mobility as high as 760 cm2/Vs was achieved for InN film grown at 550°C with 240 W of RF plasma power with a carrier density of 3.0×1019 cm−3 at room temperature. To our knowledge, this electron mobility is the highest value ever reported.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

On the Investigation of the Structure of Amorphous Substances by Means of Electron Diffraction

1982 ◽  
Vol 37 (10) ◽  
pp. 1139-1146 ◽  
Author(s):  
Frieder Paasdie ◽  
Herbert Olbrich ◽  
Ute Schestag ◽  
Peter Lamparter ◽  
Siegfried Steeb
Keyword(s):  
Electron Diffraction ◽  
Energy Resolution ◽  
Pair Correlation ◽  
High Energy ◽  
X Rays ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrostatic Filter ◽  
Amorphous Substances

A “Scanning High Energy Electron Diffraction”-(SHEED-)apparatus is described with which the intensity curves of elastically scattered electrons are obtained within a few minutes. The elimination of the inelastic background is done by means of an electrostatic filter with an energy resolution of 104, which is only limited by the line width of the beam producing system. The intensity curves obtained experimentally are corrected for multiple scattering.The pair correlation functions of amorphous Germanium as obtained by electron and X-ray diffraction are compared. The electron diffraction curves agree well with the corresponding curves of other authors. The same stands for the curves obtained with X-rays. The differences between the curves obtained with electrons and X-rays are discussed.

Epitaxial growth of Cr [001] on LiF [001]

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Mattson ◽  
M. B. Brodsky ◽  
J. Ketterson ◽  
H. You
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures ◽  
Deposition Conditions

AbstractWe report X-ray diffraction and in-situ RHEED( Reflection High Energy Electron Diffraction) measurements on Cr thin films deposited on LiF[001] single crystal substrates for thicknesses up to 300 nm and for substrate temperatures from 30 to 450°C. From these measurements we determine the range of deposition conditions necessary for epitaxial growth and the stress in these films as a function of film thickness.

Reflection Electron Diffraction of Catalase

1975 ◽  
Vol 33 ◽  
pp. 672-673
Author(s):  
T. K. Chatterjee ◽  
J. A. Spadaro ◽  
R. W. Vook
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Preliminary Report ◽  
Water Vapor Pressure ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Patterns ◽  
Reflection Electron Diffraction

Matricardi et al. have shown that high energy electron diffraction patterns of unstained and unfixed catalase may be obtained with a high voltage TEM using a hydration stage and that without such a stage TED patterns could not be obtained. They showed that such patterns were observed only when the water vapor pressure in the vicinity of the catalase was greater than 90 percent of the equilibrium value. They attributed their results to the destruction of the crystallinity of catalase when it is vacuum dried. Similar results using X-ray diffraction techniques have been reported. Matricardi et al. also noted effects due to radiation damage, whereby the number of reflections observed using the hydration stage decreased substantially with electron beam exposure. In the present preliminary report, it is shown that electron diffraction patterns can be obtained from unstained and unfixed catalase even when the crystals are exposed directly to the vacuum of the TEM but under such conditions whereby the electron beam intensity is reduced by up to approximately two orders of magnitude from that usually obtained in normal TED work on a TEM.

The Growth of GaN Films by Migration-Enhanced Epitaxy

1996 ◽  
Vol 449 ◽  
Author(s):  
S. E. Hooper ◽  
C. T. Foxon ◽  
T. S. Cheng ◽  
N. J. Jeffs ◽  
G. B. Ren ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
High Energy ◽  
Epitaxial Films ◽  
Buffer Layers ◽  
Growth Substrate ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Migration Enhanced Epitaxy

ABSTRACTGallium Nitride epitaxial films were grown by migration enhanced epitaxy directly on sapphire (0001) without using any pre-growth substrate nitridation or low temperature buffer layers. In comparison with our material grown directly on sapphire by conventional molecular beam epitaxy, a significant improvement in the surface morphology and layer properties, measured by reflection high energy electron diffraction, X-ray diffraction, scanning electron microscopy, room temperature photoluminescence and the Hall effect, was observed for material grown by migration enhanced epitaxy.

Initial Oxidation of MBE-Grown Si Surfaces

1991 ◽  
Vol 220 ◽  
Author(s):  
T. Igarashi ◽  
H. Yaguchi ◽  
K. Fujita ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Surface Oxidation ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Initial Oxidation ◽  
Mbe Growth ◽  
X Ray

We investigated the initial oxidation of MBE-grown Si (100) surfaces with atomic flatness using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 Langmuir (L) at room temperature. At elevated temperatures, the surface oxidation was substantially promoted. On the contrary, the surface oxidation was found to be substantiated on a deliberately corrugated Si surface prepared by low temperature MBE growth, even at room temperature.

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