Initial Oxidation of MBE-Grown Si Surfaces

1991 ◽  
Vol 220 ◽  
Author(s):  
T. Igarashi ◽  
H. Yaguchi ◽  
K. Fujita ◽  
S. Fukatsu ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Surface Oxidation ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Initial Oxidation ◽  
Mbe Growth ◽  
X Ray

We investigated the initial oxidation of MBE-grown Si (100) surfaces with atomic flatness using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction (RHEED). It was found that the MBE-grown surfaces are inert and hardly oxidized even after exposure to molecular oxygen up to 1500 Langmuir (L) at room temperature. At elevated temperatures, the surface oxidation was substantially promoted. On the contrary, the surface oxidation was found to be substantiated on a deliberately corrugated Si surface prepared by low temperature MBE growth, even at room temperature.

SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Binding Energy ◽  
Electron Diffraction ◽  
Band Structure ◽  
High Energy ◽  
Photoemission Spectroscopy ◽  
High Energy Electron ◽  
Valence Band Structure ◽  
X Ray ◽  
Core Level Binding Energy

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.

Electrical Properties of InN Grown by RF-MBE

2000 ◽  
Vol 639 ◽  
Author(s):  
Yoshiki Saito ◽  
Nobuaki Teraguchi ◽  
Akira Suzuki ◽  
Tomohiro Yamaguchi ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electron Diffraction ◽  
Carrier Density ◽  
Room Temperature ◽  
High Energy ◽  
Rf Plasma ◽  
Plasma Power ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTInN films with excellent surface morphology were grown by controlled the V/III ratio of InN epitaxal layer. It was found they were single crystal of InN films with wurtzite structure by X-ray diffraction (XRD) measurement and reflection high-energy electron diffraction (RHEED) observation. Hall mobility as high as 760 cm2/Vs was achieved for InN film grown at 550°C with 240 W of RF plasma power with a carrier density of 3.0×1019 cm−3 at room temperature. To our knowledge, this electron mobility is the highest value ever reported.

A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)

2003 ◽  
Vol 10 (04) ◽  
pp. 669-675
Author(s):  
F. S. Gard ◽  
J. D. Riley ◽  
R. Leckey ◽  
B. F. Usher
Keyword(s):  
Growth Rate ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Mode ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Mbe Growth ◽  
Atomic Flux

ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22–2.45 at a substrate temperature of 350°C on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

Slow Decay of Reflection High Energy Electron Diffraction Oscillations in Cal1-xMgxF2

1996 ◽  
Vol 441 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Yuriy V. Shusterman ◽  
Nikolai L. Yakovlev ◽  
Leo J. Schowalter
Keyword(s):  
Phase Separation ◽  
Electron Diffraction ◽  
Lattice Constant ◽  
Room Temperature ◽  
High Energy ◽  
Energy Electron ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Slow Decay

AbstractMagnesium is incorporated into the growth of Ca1-xMgxF2 to reduce the lattice constant of fluorite (CaF2) which is 0.6% larger than that of Si at room temperature. When grown epitaxially on Si(111) substrates at 300°C, the lattice constant of the alloy became smaller than that of Si by 1.5% when the Mg concentration was around 20%. At higher Mg concentrations, the lattice constant did not decrease any further. This invariability of the lattice constant was caused by a phase separation of the Ca1-xMgxF2 layer into a Mg-rich region and a Mg-deficient region. When the growth temperature was increased, the critical Mg concentration for the phase separation became smaller. When Ca1-xMgxF2 was grown on vicinal Si(111) substrates, the reflection high energy electron diffraction (RHEED) intensity oscillations reflected no change in the composition, suggesting segregation of a Mg-rich phase along the steps. Nevertheless, the oscillations in the intensity of the specular spot for Ca1-xMgxF2 lasted longer than those observed for pure CaF2, suggesting a flatter surface for the alloy. Scanning tunneling microscopy (STM) observations support this model.

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