A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion

2001 ◽  
Vol 669 ◽  
Author(s):  
Julie L. Ngau ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Point Defect ◽  
Recent Work ◽  
Comprehensive Model ◽  
Pairing Mechanism ◽  
Diffusion Behavior ◽  
Interstitial Carbon ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Single Temperature ◽  
Carbon Interstitial

ABSTRACTIn this work, the time evolution of B transient enhanced diffusion (TED) suppression due to the incorporation of 0.018% substitutional carbon in silicon was studied. The combination of having low C concentrations, which reduce B TED without completely eliminating it, and having diffused B profiles for several times at a single temperature provides much data upon which various models for the suppression of B TED can be tested. Recent work in the literature has indicated that the suppression of B TED in C-rich Si is caused by non-equilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via the kick-out and Frank-Turnbull reactions. Attempts to model our data with these two reactions revealed that the time evolved diffusion behavior of B was not accurately simulated and that an additional reaction that further reduces the Si self-inter- stitial concentration was necessary. In this work, we incorporate a carbon interstitial, carbon substitutional (CiCs) pairing mechanism into a comprehensive model that includes the C kick-out reaction, C Frank-Turnbull reaction, {311} defects, and boron interstitial clusters (BICs) and demonstrate that this model successfully simulates C suppression of B TED at 750 °C for anneal times ranging from 10 s to 60 min.

Modeling of TED Point Defect Paramater Extraction

2002 ◽  
Vol 717 ◽  
Author(s):  
Heidi Meyer ◽  
Scott T. Dunham
Keyword(s):  
Point Defect ◽  
Diffusion Capacity ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Transient Enhanced Diffusion ◽  
Two Factors

AbstractThe work investigates simple transient enhanced diffusion (TED) behavior, which is a reflection of the interstitial behavior in the system. The analysis shows that TED depends mainly on two factors: the intial demage profiles and the DICI product. We find that, based on these two inputs, the extent of TED can be accurately diffusion capacity (DICI) which is compared to values previously extracted from diffcusion and silicon self-diffusion experiments.

Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

1996 ◽  
Vol 438 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham
Keyword(s):  
Dislocation Loop ◽  
Silicon Wafers ◽  
Comprehensive Model ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Formation And Evolution

It has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for s{311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

Point defect Supersaturation and Enhanced Diffusion in SPE Regrown Silicon.

1983 ◽  
Vol 27 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Activation Energy ◽  
Point Defect ◽  
Solid Phase ◽  
High Concentration ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Migration Enthalpy

ABSTRACTTransient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 ± 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 ± 0.2 eV, but no loops formed.

Fundamental Modeling of Transient Enhanced Diffusion through Extended Defect Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham
Keyword(s):  
Point Defect ◽  
Extended Defects ◽  
Dislocation Loops ◽  
Extended Defect ◽  
Enhanced Diffusion ◽  
Fundamental Model ◽  
Transient Enhanced Diffusion ◽  
Defect Evolution

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.

Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants

1996 ◽  
Vol 439 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham
Keyword(s):  
Dislocation Loop ◽  
Silicon Wafers ◽  
Comprehensive Model ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Formation And Evolution

AbstractIt has been observed that dislocation loops form and grow during annealing of silicon wafers implanted at doses above the amorphization threshold. Dislocation loops can act to store interstitials for prolonged periods of anneals, sustaining an interstitial super-saturation and thus causing substantial transient enhanced diffusion (TED). We have developed a comprehensive model which, in combination with a model and parameters for {311} defects from previous work, accounts for the formation and evolution of dislocation loops during ion implant annealing, as well as giving the correct TED behavior.

The Role of Vacancies and Interstitials in Transient Enhanced Diffusion of Arsenic Implanted into Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
D. Venables ◽  
V. Krishnamoorthy ◽  
H.- J. Gossmann ◽  
A. Lilak ◽  
K. S. Jones ◽  
...  
Keyword(s):  
Fermi Level ◽  
Point Defect ◽  
Boron Diffusion ◽  
Direct Role ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Transient Enhanced Diffusion ◽  
Diffusion Enhancement ◽  
Recombination Centers

ABSTRACTBoron and antimony doped superlattices (DSLs) were implanted with arsenic at 40 keV to doses of 2×1014 cm−2, 5×1015 cm−2 and 2×1016 cm−2. Increasing the arsenic dose above 5×1015 cm−2 resulted in a reduction in the extent of arsenic transient enhanced diffusion (TED) following annealing at 700°C, 16 hr. Concurrent with this reduction in TED was a reduction in the number of free interstitials beyond the end-of-range, as measured by the boron diffusion enhancement in the doped superlattices. No enhancement in antimony diffusivity was observed in this region, indicating that vacancies play no direct role in the diffusion of arsenic in this region, although an indirect role for vacancies as recombination centers for mobile interstitials is not precluded by these experiments. We conclude that interstitials dominate arsenic diffusion in the end-of-range region and beyond. Interpretation of the DSL data in the projected range region is complicated by Fermi level and segregation effects and no definitive conclusion can be reached about the point defect populations in this region.

scholarly journals Enhanced Diffusion of Dopants in Vacancy Supersaturation Produced by MeV Implantation

1997 ◽  
Vol 469 ◽  
Author(s):  
V. C. Venezia ◽  
T. E. Haynes ◽  
A. Agarwal ◽  
H. -J. Gossmann ◽  
D. J. Eaglesham
Keyword(s):  
Surface Layer ◽  
Surface Region ◽  
Silicon On Insulator ◽  
Rich Region ◽  
Near Surface ◽  
Enhanced Diffusion ◽  
Float Zone ◽  
Transient Enhanced Diffusion

ABSTRACTThe diffusion of Sb and B markers has been studied in vacancy supersaturations produced by MeV Si implantation in float zone (FZ) silicon and bonded etch-back silicon-on-insulator (BESOI) substrates. MeV Si implantation produces a vacancy supersaturated near-surface region and an interstitial-rich region at the projected ion range. Transient enhanced diffusion (TED) of Sb in the near surface layer was observed as a result of a 2 MeV Si+, 1×1016/cm2, implant. A 4× larger TED of Sb was observed in BESOI than in FZ silicon, demonstrating that the vacancy supersaturation persists longer in BESOI than in FZ. B markers in samples with MeV Si implant showed a factor of 10× smaller diffusion relative to markers without the MeV Si+ implant. This data demonstrates that a 2 MeV Si+ implant injects vacancies into the near surface region.

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