Oxide Powders for Chemical Mechanical Polishing Produced by Chemical Vapor Synthesis

2001 ◽  
Vol 671 ◽  
Author(s):  
H. Sieger ◽  
M. Winterer ◽  
U. Keiderling ◽  
H. Hahn
Keyword(s):  
Chemical Mechanical Polishing ◽  
Primary Particle ◽  
Chemical Vapor ◽  
Mechanical Polishing ◽  
Particle Sizes ◽  
Aqueous Dispersions ◽  
Chemical Vapor Synthesis ◽  
Oxide Powders ◽  
Ultrafine Silica ◽  
Silica Alumina

ABSTRACTUltrafine silica, alumina and doped alumina/silica powders have been produced by Chemical Vapor Synthesis (CVS). Primary particle sizes from 3.5 to 12.4 nm have been achieved. Agglomerate sizes ranging from approx. 10 to 150 nm have been achieved in aqueous dispersions.

Chemical-Mechanical Polishing of Metalorganic Chemical-Vapor-Deposited Gold for LSI Interconnection

1993 ◽  
Vol 32 (Part 2, No. 3B) ◽  
pp. L392-L394 ◽  
Author(s):  
Masataka Hoshino ◽  
Haruyoshi Suehiro ◽  
Kazumi Kasai ◽  
Junji Komeno
Keyword(s):  
Chemical Mechanical Polishing ◽  
Chemical Vapor ◽  
Mechanical Polishing ◽  
Chemical Vapor Deposited ◽  
Metalorganic Chemical

Characterization of the Chemical Effects of Ceria Slurries for Chemical Mechanical Polishing

2005 ◽  
Vol 867 ◽  
Author(s):  
J. T. Abiade ◽  
S. Yeruva ◽  
B. Moudgil ◽  
D. Kumar ◽  
R. K. Singh
Keyword(s):  
Chemical Mechanical Polishing ◽  
Chemical Reactivity ◽  
Compositional Analysis ◽  
Chemical Vapor ◽  
Silica Coating ◽  
Mechanical Polishing ◽  
Atomic Force ◽  
Before And After ◽  
Ph Dependent

AbstractFor highly selective particle-based slurries or fixed abrasive pads, ceria has been identified as the abrasive of choice for the chemical mechanical polishing (CMP) step for shallow trench isolation (STI). The advantageous performance of ceria-based CMP consumables is usually attributed to enhanced chemical reactivity between ceria and oxide materials. In fact, this reaction is a central theme of all ceria polishing models from glass polishing to STI CMP. Previously, experimental evidence in support of the ceria-silica reaction during CMP was virtually non-existent. Recently, we proposed a pH-dependent ceria-silica polishing mechanism based on polishing results, in-situ friction force measurements, and spectroscopic and microscopic investigations. In this report, we have studied the chemical interactions between ceria and silica in the absence of particles using an atomic force microscope (AFM) and a scanning electron microscope (SEM). AFM silicon tapping mode cantilevers were functionalized by depositing a silica coating via chemical vapor deposition (CVD) and thermal oxidation. SEM imaging and compositional analysis was conducted on the cantilevers before and after wear against a ceria thin film, which was grown by pulsed laser deposition. The cantilever wear profile and elemental composition as a function of pH confirms our earlier polishing results and the pH-dependent CMP model for ceria-silica CMP.

The Study of Silica Sol with Great Particle Size for the SiO2 Dielectric CMP

2013 ◽  
Vol 652-654 ◽  
pp. 2228-2231
Author(s):  
Juan Wang ◽  
Ming Sun ◽  
Xia Jiang ◽  
Yan Zhang
Keyword(s):  
Particle Size ◽  
Chemical Mechanical Polishing ◽  
Water Solubility ◽  
Silica Sol ◽  
Mechanical Polishing ◽  
Particle Sizes ◽  
Oxidation Reduction

The most widely used Chemical Mechanical Polishing (CMP) process and most difficulty is the SiO2 dielectric CMP in ULSI. SiO2 cannot be removed by oxidation-reduction because Silicon is already quadrivalence. So we adopt water-solubility SiO2 growing directly from water which size can arrive 110~130nm to improve the polishing rate. The growth of silica sol is studied and the silica sol whose particle sizes can reach 120nm is gained.

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