Copper ohmic contacts to n-type SiC formed with pulsed excimer laser irradiation

2001 ◽  
Vol 680 ◽  
Author(s):  
K. Abe ◽  
M. Sumitomo ◽  
O. Eryu ◽  
K. Nakashima
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Ohmic Contacts ◽  
Laser Energy ◽  
Contact Layer ◽  
Ohmic Behavior ◽  
Current Voltage ◽  
Excimer Laser Irradiation ◽  
Current Voltage Characteristics

ABSTRACTCopper-based ohmic contacts to n-type 6H-SiC have been investigated. In this study, ohmic contacts have been fabricated with pulsed excimer laser irradiation to Cu-deposited substrates at room temperature. It is shown that current-voltage characteristics depend on the laser energy density. Contacts formed by the laser irradiation at the energy density above 1.2 J/cm2 have shown the ohmic behavior. Cu atoms have slightly diffused into SiC by the laser irradiation at 1.4 J/cm2. As a result, a thin ohmic contact layer has been obtained by the laser processing. AES and XRD study have revealed that a Cu-SiC alloy containing Cu silicide (Cu3Si) is formed by the laser irradiation.

Excimer (XeCl) Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature for TFT FeRAM Application

2004 ◽  
Vol 830 ◽  
Author(s):  
W. X. Xianyu ◽  
H. S. Cho ◽  
J. Y. Kwon ◽  
H.X. Yin ◽  
T. Noguchi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Energy Density ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Perovskite Phase ◽  
Hysteresis Loops ◽  
Xecl Laser

ABSTRACTIn this study, we successfully produced PbZr0.4Ti0.6O3 (PZT (40/60)) thin films with high crystallinity and high remnant polarization (Pr) at low process temperatures using pulsed excimer (XeCl) laser irradiation. In our experiments, amorphous PZT films were prepared on Pt/Ti/SiO2/Si substrates by a sol-gel method. A two-step process was used to crystallize the amorphous thin films: the films were annealed at 550°C for 10 min to initiate the nucleation of the PZT perovskite phase, and then annealed with an excimer laser heating at 400°C in a 120 Torr nitrogen gas atmosphere. Laser energy density was varied from 150 to 750 mJ/cm2 per pulse. x-ray diffraction (XRD) patterns show that 150–200 mJ/cm2 range multi-shot excimer laser irradiation drastically improved the crystallinity of the PZT perovskite phase, and FESEM photographs show that the PZT thin film has uniform-sized crystal grains. The ferroelectric properties were found to depend on the laser energy density and shot number. Before the laser annealing, the films show hysteresis loops with low Pr and the loops do not saturate. After laser annealing, the films show highly saturated hysteresis loops, with the Pr increasing from 2.2 μC/cm2 to 23.0 μC/cm2. We also propose a new technology for fabrication of thin film transistor (TFT)-driven FeRAM devices on arbitrary insulator substrate such as on glass.

Electrical Defect Analysis Following Pulsed Laserirradiation of Unimplanted GaAs

1982 ◽  
Vol 13 ◽  
Author(s):  
D. Pribat ◽  
S. Delage ◽  
D. Dieumegard ◽  
M. Croset ◽  
P.C. Srivastava ◽  
...  
Keyword(s):  
Energy Density ◽  
Laser Irradiation ◽  
Laser Energy ◽  
Subsurface Layer ◽  
Defect Analysis ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Important Barrier ◽  
Induced Defects ◽  
Pulsed Laser Irradiation

ABSTRACTCurrent-voltage, capacitance-voltage and defect spectroscopy techniques are used to characterize the electrical properties of GaAs crystals after pulsed laser irradiation with either a Nd-YAG or a Ruby laser. I(V) and C(V) measurements performed in conjunction on Au/GaAs Schottky structures after laser irradiation at low energy density show an important barrier lowering, of the order of 300mV. Carrier compensation up to 6×lO16/cm3 is observed in a subsurface layer whose thickness increases with deposited laser energy density. D.L.T.S. is used to study the tail of laser induced defects behind the heavily compensated layer. Finally the results are compared to those obtained following conventional thermal treatment.

scholarly journals Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation

Symmetry ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1935
Author(s):  
Yijian Jiang ◽  
Haoqi Tan ◽  
Yan Zhao
Keyword(s):  
Electrical Properties ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Hole Concentration ◽  
Light Output ◽  
Annealing Treatment ◽  
Optical And Electrical Properties ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I–V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg–H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O2-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V.

Agglomeration of amorphous silicon film with high energy density excimer laser irradiation

2007 ◽  
Vol 515 (5) ◽  
pp. 2872-2878 ◽  
Author(s):  
Ming He ◽  
Ryoichi Ishihara ◽  
Wim Metselaar ◽  
Kees Beenakker
Keyword(s):  
Energy Density ◽  
Amorphous Silicon ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Silicon Film ◽  
High Energy ◽  
High Energy Density ◽  
Amorphous Silicon Film ◽  
Excimer Laser Irradiation

Formation of Low Resistance Nonalloyed Ti∕Au Ohmic Contacts to n-Type ZnO by KrF Excimer Laser Irradiation

2005 ◽  
Vol 8 (11) ◽  
pp. G317 ◽  
Author(s):  
Min-Suk Oh ◽  
Sang-Ho Kim ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

Surface modification of inorganic solid oxides by excimer laser irradiation

1989 ◽  
Author(s):  
Kaoru Igarashi ◽  
Hideaki Saito ◽  
Tomoo Fujioka ◽  
Satoru Fujitsu ◽  
Kunihito Koumoto ◽  
...  
Keyword(s):  
Surface Modification ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Solid Oxides ◽  
Excimer Laser Irradiation

Wavelength Dependence of Excimer Laser Irradiation Effects on Ethylene-Tetrafluoroethylene Copolymer

1994 ◽  
Vol 33 (Part 1, No. 8) ◽  
pp. 4764-4768 ◽  
Author(s):  
Yuji Hamada ◽  
Shunichi Kawanishi ◽  
Masanobu Nishii ◽  
Shun'ichi Sugimoto ◽  
Tadashi Yamamoto
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Wavelength Dependence ◽  
Irradiation Effects ◽  
Excimer Laser Irradiation ◽  
Ethylene Tetrafluoroethylene

Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation

1996 ◽  
Vol 35 (Part 2, No. 11B) ◽  
pp. L1473-L1475 ◽  
Author(s):  
Kuninori Kitahara ◽  
Katsuyuki Suga ◽  
Akito Hara ◽  
Kazuo Nakajima
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Phase Variation ◽  
Excimer Laser Irradiation ◽  
Amorphous Si

Polycrystalline silicon recrystallized with excimer laser irradiation and impurity doping using ion doping method

1993 ◽  
Vol 73 (7) ◽  
pp. 3271-3275 ◽  
Author(s):  
Yutaka Miyata ◽  
Mamoru Furuta ◽  
Tatsuo Yoshioka ◽  
Tetsuya Kawamura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Ion Doping ◽  
Impurity Doping ◽  
Excimer Laser Irradiation

Surface Alteration of Amorphous Si3N4 Films by ArF Excimer Laser Irradiation

1995 ◽  
Vol 34 (Part 2, No. 11A) ◽  
pp. L1482-L1485 ◽  
Author(s):  
Kazuo Nakamae ◽  
Kou Kurosawa ◽  
Yasuo Takigawa ◽  
Wataru Sasaki ◽  
Yasukazu Izawa ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Surface Alteration ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Amorphous Si3n4
Sign in / Sign up

Export Citation Format

Share Document