scholarly journals Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys

2001 ◽  
Vol 692 ◽  
Author(s):  
A. M. Mintairov ◽  
P. A. Blagnov ◽  
T. Kosel ◽  
J. L. Merz ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Near Field ◽  
Zeeman Splitting ◽  
Localized States ◽  
Emission Lines ◽  
Structural And Optical Properties ◽  
Dramatic Difference ◽  
Nitrogen Excess ◽  
Narrow Emission

AbstractWe used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appearance of narrow emission lines (halfwidth 0.5−2 meV) at temperatures below 70K. We estimated the size, density, and nitrogen excess of individual compositional fluctuations (clusters), revealing phaseseparation effects in the distribution of nitrogen in GaAsN and InGaAsN. We found a dramatic difference in the Zeeman splitting of cluster lines between GaAsN and InGaAsN, indicating a strong effect of In on the exciton g-factor.

Lateral Coupling of Self-Assembled Quantum Dots Studied by Near-Field Spectroscopy

1999 ◽  
Vol 571 ◽  
Author(s):  
H.D. Robinson ◽  
B.B. Goldberg ◽  
J.L. Merz
Keyword(s):  
Quantum Dots ◽  
Additional Data ◽  
High Spatial Resolution ◽  
Large Fraction ◽  
Near Field ◽  
Localized States ◽  
Emission Lines ◽  
Lateral Coupling ◽  
Self Assembled ◽  
Density Regime

ABSTRACTLateral coupling between separate quantum dots has been observed in a system of In0.55A10.45As self-assembled quantum dots. The experiment was performed by taking photoluminescence excitation (PLE) spectra in the optical near-field at 4.2 K. The high spatial resolution afforded by the near-field technique allows us to resolve individual dots in a density regime where interactions between neighboring dots become apparent. In the PLE spectra, narrow resonances are observed in the emission lines of individual dots. A large fraction of these resonances occur simultaneously in several emission lines, originating from different quantum dots. This is evidence of interdot scattering of carriers, which additional data show to be mediated by localized states at energies below the wetting layer exciton energy. A very rich phonon spectrum generated by the complicated interfaces between barrier and dot material is also evident in the data.

Structural and optical properties of ultrananocrystalline diamond / InGaAs/GaAs quantum dot structures

2009 ◽  
Vol 518 (5) ◽  
pp. 1489-1492 ◽  
Author(s):  
C. Popov ◽  
A. Gushterov ◽  
L. Lingys ◽  
C. Sippel ◽  
J.P. Reithmaier
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Structural And Optical Properties ◽  
Ultrananocrystalline Diamond ◽  
Gaas Quantum Dot

Micro-photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

2004 ◽  
Vol 831 ◽  
Author(s):  
K. Sebald ◽  
H. Lohmeyer ◽  
J. Gutowski ◽  
S. Einfeldt ◽  
C. Roder ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Quantum Well ◽  
Emission Lines ◽  
Excitation Density ◽  
Spectral Position ◽  
Strong Localization ◽  
Photoluminescence Studies ◽  
Experimental Findings

ABSTRACTWe present micro-photoluminescence measurements on unstructured InGaN/GaN quantum well samples. Single sharp emission lines were observed and their optical properties were studied as a function of temperature and excitation density. The experimental findings such as the independence of their spectral position on the excitation density and the observation of binding and antibinding multiexcitonic states give clear evidence for the existence of strong localization centers in the InGaN quantum well, which exhibit the same characteristics as they are known for quantum dot structures.

Structural and optical properties of InAs quantum dot chains grown on nanoimprint lithography structured GaAs with different pattern orientations

2010 ◽  
Vol 97 (17) ◽  
pp. 173107 ◽  
Author(s):  
T. V. Hakkarainen ◽  
J. Tommila ◽  
A. Schramm ◽  
A. Tukiainen ◽  
R. Ahorinta ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Nanoimprint Lithography ◽  
Structural And Optical Properties ◽  
Inas Quantum Dot

Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical properties

2007 ◽  
Vol 301-302 ◽  
pp. 740-743 ◽  
Author(s):  
T. Mano ◽  
T. Kuroda ◽  
K. Mitsuishi ◽  
M. Yamagiwa ◽  
X.-J. Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Droplet Epitaxy ◽  
Structural And Optical Properties ◽  
Quantum Dot Laser ◽  
Gaas Quantum Dot

Effect of growth kinetics on the structural and optical properties of quantum dot ensembles

2004 ◽  
Vol 267 (1-2) ◽  
pp. 47-59 ◽  
Author(s):  
V.G. Dubrovskii ◽  
G.E. Cirlin ◽  
Yu.G. Musikhin ◽  
Yu.B. Samsonenko ◽  
A.A. Tonkikh ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Growth Kinetics ◽  
Structural And Optical Properties
Sign in / Sign up

Export Citation Format

Share Document