Micro-photoluminescence studies of excitonic and multiexcitonic states of quantum dot-like localization centers in InGaN/GaN structures

2004 ◽  
Vol 831 ◽  
Author(s):  
K. Sebald ◽  
H. Lohmeyer ◽  
J. Gutowski ◽  
S. Einfeldt ◽  
C. Roder ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Quantum Well ◽  
Emission Lines ◽  
Excitation Density ◽  
Spectral Position ◽  
Strong Localization ◽  
Photoluminescence Studies ◽  
Experimental Findings

ABSTRACTWe present micro-photoluminescence measurements on unstructured InGaN/GaN quantum well samples. Single sharp emission lines were observed and their optical properties were studied as a function of temperature and excitation density. The experimental findings such as the independence of their spectral position on the excitation density and the observation of binding and antibinding multiexcitonic states give clear evidence for the existence of strong localization centers in the InGaN quantum well, which exhibit the same characteristics as they are known for quantum dot structures.

Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures

2005 ◽  
Vol 892 ◽  
Author(s):  
Kathrin Sebald ◽  
Henning Lohmeyer ◽  
Jürgen Gutowski ◽  
Tomohiro Yamaguchi ◽  
Detlef Hommel
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Well ◽  
Comparative Investigation ◽  
Emission Lines ◽  
Excitation Density ◽  
Spectral Position ◽  
Strong Localization ◽  
Experimental Findings

AbstractWe present comparative micro-photoluminescence measurements on InGaN/GaN quantum well and quantum dot samples. Single sharp emission lines were investigated for both kinds of samples as a function of temperature and excitation density. For the sharp emission lines of the quantum dots and the strong localization centers in the quantum well samples comparable experimental findings were obtained such as the independence of their spectral position of the excitation density and the observation of binding and antibinding multiexcitonic states giving clear evidence for the quantum dot nature of localization centers.

scholarly journals Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys

2001 ◽  
Vol 692 ◽  
Author(s):  
A. M. Mintairov ◽  
P. A. Blagnov ◽  
T. Kosel ◽  
J. L. Merz ◽  
V. M. Ustinov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Near Field ◽  
Zeeman Splitting ◽  
Localized States ◽  
Emission Lines ◽  
Structural And Optical Properties ◽  
Dramatic Difference ◽  
Nitrogen Excess ◽  
Narrow Emission

AbstractWe used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appearance of narrow emission lines (halfwidth 0.5−2 meV) at temperatures below 70K. We estimated the size, density, and nitrogen excess of individual compositional fluctuations (clusters), revealing phaseseparation effects in the distribution of nitrogen in GaAsN and InGaAsN. We found a dramatic difference in the Zeeman splitting of cluster lines between GaAsN and InGaAsN, indicating a strong effect of In on the exciton g-factor.

ANOMALOUS SPECTRAL SHIFTS OF INDIRECT EXCITONS IN COUPLED GaAs QUANTUM WELLS

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3606-3610 ◽  
Author(s):  
D. W. SNOKE ◽  
V. NEGOITA ◽  
D. HACKWORTH ◽  
K. EBERL
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Low Frequency ◽  
Blue Shift ◽  
Substrate Material ◽  
Excitation Density ◽  
Spectral Position ◽  
Indirect Excitons ◽  
Spectral Shifts ◽  
Resonant Laser

We have studied the energy shifts of indirect excitons consisting of an electron in one quantum well and a hole in an adjacent quantum well. Several surprising effects occur: (1) a very strong blue shift with increasing intensity of resonant laser excitation, (2) a very strong red shift with weak magnetic field, and (3) very low-frequency (sub-Hz) fluctuations of the spectral position at high excitation density. We discuss the effect of screening by carriers excited in the substrate material.

Optical properties of electron beam and -ray irradiated InGaAs/GaAs quantum well and quantum dot structures

2013 ◽  
Vol 83 ◽  
pp. 42-47 ◽  
Author(s):  
A. Aierken ◽  
Q. Guo ◽  
T. Huhtio ◽  
M. Sopanen ◽  
Ch.F. He ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Quantum Dot ◽  
Quantum Well

Optical properties of hybrid quantum dot/quantum well active region based on GaAs system

2012 ◽  
Vol 112 (6) ◽  
pp. 063103 ◽  
Author(s):  
Jiri Thoma ◽  
Tomasz J. Ochalski ◽  
Maxime Hugues ◽  
Shiyong Zhang ◽  
Stephen P. Hegarty ◽  
...  
Keyword(s):  
Optical Properties ◽  
Active Region ◽  
Quantum Dot ◽  
Quantum Well

scholarly journals Magneto-photoluminescence studies of Zn1−xMnxTe/ZnTe multiple quantum-well and quantum-dot structures

1998 ◽  
Vol 184-185 ◽  
pp. 325-329 ◽  
Author(s):  
Ivan J. Griffin ◽  
Peter J. Klar ◽  
Daniel Wolverson ◽  
J. John Davies ◽  
Bernard Lunn ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Photoluminescence Studies
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