THE STUDY OF Al0.29Ga0.71N-BASED SCHOTTKY PHOTODIODES GROWN ON SILICON BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

2013 ◽  
Vol 27 (12) ◽  
pp. 1350085
Author(s):  
M. Z. MOHD YUSOFF ◽  
Z. HASSAN ◽  
C. W. CHIN ◽  
H. ABU HASSAN ◽  
M. J. ABDULLAH ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Rf Plasma ◽  
Yellow Emission ◽  
Band Edge Emission ◽  
Current Voltage ◽  
Standard Value ◽  
Schottky Photodiode

In this paper, the growth and characterization of epitaxial Al 0.29 Ga 0.71 N grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. PL spectrum of sample has shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing that it is comparable in crystal quality of the sample when compared with previous reports. From the Raman measurement of as-grown Al 0.29 Ga 0.71 N layer on GaN / AlN / Si sample. We found that the dominant E 2 (high) phonon mode of GaN appears at 572.7 cm-1. The E 2 (high) mode of AlN appears at 656.7 cm-1 and deviates from the standard value of 655 cm-1 for unstrained AlN . Finally, AlGaN Schottky photodiode have been fabricated and analyzed by mean of electrical characterization, using current–voltage (I–V) measurement to evaluate the performance of this device.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Gan Nanowires

Electrical characterization of gallium planar‐doped ZnSe grown by molecular‐beam epitaxy

1989 ◽  
Vol 66 (9) ◽  
pp. 4295-4300 ◽  
Author(s):  
S. M. Shibli ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
B. J. Skromme ◽  
R. E. Nahory ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization

Electrical Characterization Of Nitrogen Acceptors In p-ZnSe/p-GaAs Grown By Molecular Beam Epitaxy

1996 ◽  
Vol 442 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Energy Levels ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Growth Conditions ◽  
Current Voltage ◽  
Major Interest ◽  
Transient Spectroscopy

AbstractUsing current-voltage measurements, deep-level transient spectroscopy and admittance spectroscopy we investigated nitrogen doped ZnSe grown on p-GaAs substrates by molecular beam epitaxy. Three major hole traps were observed with energy levels at 0. 11, 0.46, and 0.56 eV from the valence band. We attribute the level at 0.11 eV to a nitrogen acceptor. No other direct observations of this important acceptor level in p-ZnSe have been reported in the literature so far. The two remaining levels may originate from the nitrogen doping process. In addition, reverse current-voltage characteristics of the ZnSe/GaAs heterojunction show a hysteresis at low temperature and a soft saturation. At a constant reverse bias the current increases slowly until it reaches a steady state value. This behavior is attributed to a slow voltage-induced barrier lowering due to the presence of mismatch interface states. Therefore, these analyses are of a major interest for applications of ZnSe/GaAs based devices and illustrates the necessity of improving the growth conditions of such structures.

scholarly journals Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate

2019 ◽  
Vol 126 (9) ◽  
pp. 095702 ◽  
Author(s):  
Abhishek Vaidya ◽  
Jith Sarker ◽  
Yi Zhang ◽  
Lauren Lubecki ◽  
Joshua Wallace ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization

Electrical Characterization of Lateral P-N Junctions Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy

1993 ◽  
Vol 32 (Part 1, No. 1B) ◽  
pp. 523-527 ◽  
Author(s):  
Makoto Inai ◽  
Teiji Yamamoto ◽  
Mototada Fujii ◽  
Toshihiko Takebe ◽  
Kikuo Kobayashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization
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