Micropatterned Vertically Aligned Carbon Nanotube Growth on a Si Surface or inside Trenches for field-emission devices

2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Jin Ho Lee ◽  
...  

AbstractThe good field-emission properties of carbon nanotubes coupled with their high mechanical strength, chemical stability, and high aspect ratio, make them ideal candidates for the construction of efficient and inexpensive field-emission electronic devices. The fabrication process reported here has considerable potential for use in the development of integrated radio frequency amplifiers or field emission-controllable cold electron guns for field emission displays. This fabrication process is compatible with currently used semiconductor processing technologies. Micropatterned vertically aligned carbon nanotubes were grown on planar Si surface or inside the trenches, using chemical vapor deposition, photolithography, pulsed-laser deposition, reactive ion etching, and the lift-off method. To control the field-emission current by a 3rd electrode, the gate electrode, we grew carbon nanotubes inside the trenches. This triode-type structure is the best to realize the gray-scale carbon nanotube field emission. This carbon nanotube fabrication process can be widely applied for the development of electronic devices using carbon nanotube field emitters as cold cathodes and could revolutionize the area of field-emitting electronic devices such as RF amplifiers and field emission displays.

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Hyun Kyung Jung ◽  
Hyung Woo Lee

The effect of catalytic thin film thickness on the diameter control of individual carbon nanotubes grown by plasma enhanced chemical vapor deposition was investigated. Individual carbon nanotubes were grown on catalytic nanodot arrays, which were fabricated by e-beam lithography and e-beam evaporation. During e-beam evaporation of the nanodot pattern, more catalytic metal was deposited at the edge of the nanodots than the desired catalyst thickness. Because of this phenomenon, carbon atoms diffused faster near the center of the dots than at the edge of the dots. The carbon atoms, which were gathered at the interface between the catalytic nanodot and the diffusion barrier, accumulated near the center of the dot and lifted the catalyst off. From the experiments, an individual carbon nanotube with the same diameter as that of the catalytic nanodot was obtained from a 5 nm thick catalytic nanodot; however, an individual carbon nanotube with a smaller diameter (~40% reduction) was obtained from a 50 nm thick nanodot. We found that the thicker the catalytic layer, the greater the reduction in diameter of the carbon nanotubes. The diameter-controlled carbon nanotubes could have applications in bio- and nanomaterial scanning and as a contrast medium for magnetic resonance imaging.


2001 ◽  
Vol 706 ◽  
Author(s):  
Young-Jun Park ◽  
In-Taek Han ◽  
Ha-Jin Kim ◽  
Yun-Sung Woo ◽  
Nae-Sung Lee ◽  
...  

AbstractA direct synthesis of carbon nanotubes (CNTs) on substrates by chemical vapor deposition (CVD) is one of highly probable routes to reach their application to field emission displays. Several stringent requirements are prerequisite for this purpose, including low temperature growth below 600°C to engage glass substrates and large area deposition for practical use. This study carried out synthesis of CNTs by thermal CVD on glass substrates at temperatures as low as 500~550°C. CNTs were grown by thermal decomposition of CO and H2 gases at an atmospheric pressure for different thickness of Invar (an Fe-Ni-Co alloy ) catalytic layers. The growth of CNTs was strongly correlated with preparation of catalytic layers. The diameters and heights of as-grown CNTs increased as the catalytic layers became thicker from 2nm to 30nm. Measurements of the field emission properties of CNTs showed that the threshold electric fields were lowered with increasing thickness of catalytic layers. A uniform electron emission was observed over a large area of 150 × 150mm2, with high emission currents and high brightness.


2002 ◽  
Vol 750 ◽  
Author(s):  
Mann Yi ◽  
Hyuck Jung ◽  
Woo-Suk Seo ◽  
Jong-Won Park ◽  
Hyun-Tae Chun ◽  
...  

ABSTRACTCarbon nanotubes (CNTs) have been significantly used for the field emitters for display applications. It is necessary to investigate the process variables affecting the screen printing of carbon nanotubes for the fabrication of good-quality field emitter devices with uniformity. Screen printing techniques have some advantages such as the short processing time and lower processing cost. The carbon nanotube pastes for screen printing are normally composed of organic binders, carbon nanotubes, and some additive materials. In this study, the carbon nanotube emitters for field emission displays were fabricated with different processing variables such as paste viscosity, paste composition, screen mesh, etc. The CNT pastes were printed on Cr-coated/Ag-printed soda-lime glass substrates. As a result, the processing variables were optimized for the good screen printing. From the I-V characteristics, the turn-on field of single-walled nanotubes was lower than that of multi-walled nanotubes. The decrease in the mesh number of screen masks resulted in decreasing the turn-on field and increasing the electron emission current due to the higher density and vertical alignment of printed-CNTs.


2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.


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