Screen Printing of Carbon Nanotubes for Field Emission Displays

2002 ◽  
Vol 750 ◽  
Author(s):  
Mann Yi ◽  
Hyuck Jung ◽  
Woo-Suk Seo ◽  
Jong-Won Park ◽  
Hyun-Tae Chun ◽  
...  

ABSTRACTCarbon nanotubes (CNTs) have been significantly used for the field emitters for display applications. It is necessary to investigate the process variables affecting the screen printing of carbon nanotubes for the fabrication of good-quality field emitter devices with uniformity. Screen printing techniques have some advantages such as the short processing time and lower processing cost. The carbon nanotube pastes for screen printing are normally composed of organic binders, carbon nanotubes, and some additive materials. In this study, the carbon nanotube emitters for field emission displays were fabricated with different processing variables such as paste viscosity, paste composition, screen mesh, etc. The CNT pastes were printed on Cr-coated/Ag-printed soda-lime glass substrates. As a result, the processing variables were optimized for the good screen printing. From the I-V characteristics, the turn-on field of single-walled nanotubes was lower than that of multi-walled nanotubes. The decrease in the mesh number of screen masks resulted in decreasing the turn-on field and increasing the electron emission current due to the higher density and vertical alignment of printed-CNTs.

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Jinzhuo Xu ◽  
Tao Feng ◽  
Yiwei Chen ◽  
Zhuo Sun

The graphene double-walled carbon nanotube (DWCNT) hybrid films were prepared by vacuum filtration and screen printing. Their electron field emission properties have been studied systematically. The electron emission properties of the hybrid films are much better than those of pure DWCNT films and pure graphene films. Comparing with the screen printed films, the vacuum filtered films have many advantages, such as lower turn-on field, higher emission current density, better uniformity, better long-term stability, and stronger adhesive strength with conductive substrates. The optimized hybrid films with 20% weight ratio of graphene, which were fabricated by vacuum filtration, show the best electron emission performances with a low turn-on field of 0.50 Vμm−1(at 1 μAcm−2) and a high field enhancement factorβof 27000.


2002 ◽  
Vol 16 (06n07) ◽  
pp. 979-982 ◽  
Author(s):  
JAEMYUNG KIM ◽  
KWANGSOO NO

We have grown carbon nanotubes (CNTs) on the soda-lime glass substrates using chemical vapor deposition of C 2 H 2 gas at 550°C. We used electro-plated Ni thin film as a catalyst and screen-printed Ag thick film as a cathode. The turn-on field was about 2.55 V /μ m with an emission current density of 10 μ A / cm 2, and electric field was about 4.0 V /μ m with an emission current density of 3 mA/cm2. Fowler-Nordheim plot shows good linear fit, indicating that the emission current of CNTs follows the Fowler-Nordheim behavior. This process is suitable for mass production of CNT field emission display(CNT-FED), because of its merits; low temperature (≤ 550° C ) process, easiness of CNT patterning, non-vacuum process, large area uniformity.


2001 ◽  
Vol 706 ◽  
Author(s):  
Jung Inn Sohn ◽  
Seonghoon Lee ◽  
Yoon-Ho Song ◽  
Sung-Yool Choi ◽  
Jin Ho Lee ◽  
...  

AbstractThe good field-emission properties of carbon nanotubes coupled with their high mechanical strength, chemical stability, and high aspect ratio, make them ideal candidates for the construction of efficient and inexpensive field-emission electronic devices. The fabrication process reported here has considerable potential for use in the development of integrated radio frequency amplifiers or field emission-controllable cold electron guns for field emission displays. This fabrication process is compatible with currently used semiconductor processing technologies. Micropatterned vertically aligned carbon nanotubes were grown on planar Si surface or inside the trenches, using chemical vapor deposition, photolithography, pulsed-laser deposition, reactive ion etching, and the lift-off method. To control the field-emission current by a 3rd electrode, the gate electrode, we grew carbon nanotubes inside the trenches. This triode-type structure is the best to realize the gray-scale carbon nanotube field emission. This carbon nanotube fabrication process can be widely applied for the development of electronic devices using carbon nanotube field emitters as cold cathodes and could revolutionize the area of field-emitting electronic devices such as RF amplifiers and field emission displays.


2001 ◽  
Vol 706 ◽  
Author(s):  
Young-Jun Park ◽  
In-Taek Han ◽  
Ha-Jin Kim ◽  
Yun-Sung Woo ◽  
Nae-Sung Lee ◽  
...  

AbstractA direct synthesis of carbon nanotubes (CNTs) on substrates by chemical vapor deposition (CVD) is one of highly probable routes to reach their application to field emission displays. Several stringent requirements are prerequisite for this purpose, including low temperature growth below 600°C to engage glass substrates and large area deposition for practical use. This study carried out synthesis of CNTs by thermal CVD on glass substrates at temperatures as low as 500~550°C. CNTs were grown by thermal decomposition of CO and H2 gases at an atmospheric pressure for different thickness of Invar (an Fe-Ni-Co alloy ) catalytic layers. The growth of CNTs was strongly correlated with preparation of catalytic layers. The diameters and heights of as-grown CNTs increased as the catalytic layers became thicker from 2nm to 30nm. Measurements of the field emission properties of CNTs showed that the threshold electric fields were lowered with increasing thickness of catalytic layers. A uniform electron emission was observed over a large area of 150 × 150mm2, with high emission currents and high brightness.


2003 ◽  
Vol 772 ◽  
Author(s):  
Masakazu Muroyama ◽  
Kazuto Kimura ◽  
Takao Yagi ◽  
Ichiro Saito

AbstractA carbon nanotube triode using Helicon Plasma-enhanced CVD with electroplated NiCo catalyst has been successfully fabricated. Isolated NiCo based metal catalyst was deposited at the bottom of the cathode wells by electroplating methods to control the density of carbon nanotubes and also reduce the activation energy of its growth. Helicon Plasma-enhanced CVD (HPECVD) has been used to deposit nanotubes at 400°C. Vertically aligned carbon nanotubes were then grown selectively on the electroplated Ni catalyst. Field emission measurements were performed with a triode structure. At a cathode to anode gap of 1.1mm, the turn on voltage for the gate was 170V.


2006 ◽  
Vol 37 (6) ◽  
pp. 495-499 ◽  
Author(s):  
Fan-Guang Zeng ◽  
Chang-Chun Zhu ◽  
Weihua Liu ◽  
Xinghui Liu

2004 ◽  
Vol 836 ◽  
Author(s):  
Ki-Hyun Kim ◽  
Young-Gab Chun ◽  
Byung-Ok Park ◽  
Kyung-Hoon Yoon

ABSTRACTCIGS nanoparticles for the CIGS absorber layer have been synthesized by low temperature colloidal routes. The CIGS absorber layers for solar cells have been prepared by spray deposition of CIGS nanoparticle precursors (∼20 nm) in glove box under inert atmosphere. An automatic air atomizing nozzle spray system with computer controlled X-Y step motor system was used to spray. The nanoparticle precursor CIGS film was deposited onto molybdenum-coated soda-lime glass substrates (2.5 cm × 5.0 cm) heated to 160°C. The film thickness in the range of 2 μm ± 0.3 μm was attained by spraying of 3 mM colloidal over an area of 12.5 cm2. The coalescence between particles was observed in the CIGS absorber layer under post-treatment of over 550 °C. This is related to the reactive sintering among the nanoparticles to reduce surface energy of the particles. The CuxSe thin film, formed on Mo film by evaporation, improved adhesion between CIGS and Mo layers and enhanced the coalescence of the particles in the CIGS layer. These are closely related to the fluxing of Cu2Se phase which has relatively low melting temperature. The CdS buffer layer was deposited on the CIGS/Mo/soda-lime glass substrate by chemical bath deposition. The CIGS nanoparticles-based absorber layers were characterized by using energy dispersive spectroscopy (EDS), x-ray diffraction (XRD) and high-resolution scanning electron microscopy (HRSEM).


2005 ◽  
Vol 865 ◽  
Author(s):  
P. D. Paulson ◽  
S. H. Stephens ◽  
W. N. Shafarman

AbstractVariable angle spectroscopic ellipsometry has been used to characterize Cu(InGa)Se2 thin films as a function of relative Ga content and to study the effects of Cu off-stoichiometry. Uniform Cu(InGa)Se2 films were deposited on Mo-coated soda lime glass substrates by elemental evaporation with a wide range of relative Cu and Ga concentrations. Optical constants of Cu(InGa)Se2 were determined over the energy range of 0.75–C4.6 eV for films with 0 ≤ Ga/(In+Ga) ≤ 1 and used to determine electronic transition energies. Further, the changes in the optical constants and electronic transitions as a function of Cu off-stoichiometry were determined in Cu-In-Ga-Se films with Cu atomic concentration varying from 10 to 25 % and Ga/(In+Ga) = 0.3. Films with Cu in the range 16–24 % are expected to contain 2 phases so an effective medium approximation is used to model the data. This enables the relative volume fractions of the two phases, and hence composition, to be determined. Two distinctive features are observed in the optical spectra as the Cu concentration decreases. First, the fundamental bandgaps are shifted to higher energies. Second, the critical point features at higher energies become broader suggesting degradation of the crystalline quality of the material.


2011 ◽  
Vol 204-210 ◽  
pp. 152-155
Author(s):  
Chao Wu ◽  
Wen Jie Zhang

Carbon nanotubes (CNTs) had good field emission ability and were adopted to form the cold cathode. The backlight field emission unit (BFEU) with CNTs as field emitter was designed and fabricated, and the detailed manufacture process was also given. The flat soda-lime glass was used as substrate plate. With the photolithography process, the indium tin oxide thin film covered on the cathode plate surface was divided into bar stripes to form the meshy bottom electrode for improving the field emission properties of CNT emitters. The sealed BFEU demonstrated better field emission performance, high luminance brightness. With the simple fabrication process, the total manufacture cost was also low.


2005 ◽  
Vol 44 (1A) ◽  
pp. 365-370 ◽  
Author(s):  
Chuan-Ping Juan ◽  
Kuo-Ji Chen ◽  
Chun-Chien Tsai ◽  
Kao-Chao Lin ◽  
Wei-Kai Hong ◽  
...  

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