Hole Transport in Self-Organized Oligosilane Thin Films with Highly Ordered Hopping Sites

2001 ◽  
Vol 707 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
A. Richter ◽  
M. Shimomura ◽  
A. Kaito ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Multilayered Structure ◽  
Hole Transport ◽  
Conjugated Molecules ◽  
Disordered Structures ◽  
Self Organized ◽  
Carrier Transport Properties

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

Hole Transport In Self-Organized Oligosilane Thin Films With Highly Ordered Hopping Sites

2001 ◽  
Vol 708 ◽  
Author(s):  
H. Okumoto ◽  
T. Yatabe ◽  
A. Richter ◽  
M. Shimomura ◽  
A. Kaito ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Hole Mobility ◽  
Multilayered Structure ◽  
Hole Transport ◽  
Conjugated Molecules ◽  
Disordered Structures ◽  
Self Organized ◽  
Carrier Transport Properties

ABSTRACTSelf-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of -conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhenius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

Multi-carrier transport properties in p-type ZnO thin films

2009 ◽  
Vol 149 (39-40) ◽  
pp. 1628-1632 ◽  
Author(s):  
H.B. Ye ◽  
J.F. Kong ◽  
W. Pan ◽  
W.Z. Shen ◽  
B. Wang
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Zno Thin Films ◽  
P Type ◽  
Carrier Transport Properties

Availability of Liquid Crystalline Materials for Organic Polycrystalline Semiconductor Thin Films

2006 ◽  
Vol 965 ◽  
Author(s):  
Hiroaki Iino ◽  
Jun-ichi Hanna
Keyword(s):  
Thin Films ◽  
Liquid Crystals ◽  
Grain Boundaries ◽  
Transport Properties ◽  
Liquid Crystalline ◽  
Carrier Transport ◽  
Polycrystalline Films ◽  
Semiconductor Thin Films ◽  
Polycrystalline Semiconductor ◽  
Carrier Transport Properties

ABSTRACTWe have investigated the charge carrier transport properties of polycrystalline films fabricated with discotic and calamitic liquid crystals. The polycrystalline films of these liquid crystals exhibiting particular textures under a polarized microscope, i.e., hexagonal and co-circular patterns for discotic and calamitic liquid crystals, respectively, which indicate that the molecular alignment in the liquid crystalline phase is well preserved exhibit clear hole transport along with molecular stacks even in a 15 μm thick film, judging from transient photocurrents by time of flight method. The hole mobilities are over 0.1 cm2/Vs at room temperature. These results indicate formation of fewer grain boundaries across conduction channels. On the other hand, the carrier transport properties in the polycrystalline films of non-liquid crystalline molecules with the same molecular shape exhibit no particular patterns as described and photocurrents are annihilated in the bulk as a function of time, indicating many deep trap sites in grain boundaries. The present results indicate that the liquid crystalline molecule is a good candidate for preparing quality organic polycrystalline semiconductor thin films in opto-electronic applications.

Carrier Transport Properties of DC Magnetron Reactive Sputtered a-Si:H Films

1989 ◽  
Vol 149 ◽  
Author(s):  
M. Pinarbasi ◽  
N. Maley ◽  
J. R. Abelson ◽  
V. Chu ◽  
S. Wagner
Keyword(s):  
Transport Properties ◽  
Hydrogen Content ◽  
Carrier Transport ◽  
Deep Level ◽  
Reactive Sputtering ◽  
Hole Transport ◽  
Ir Absorption ◽  
Defect States ◽  
Dc Magnetron Reactive Sputtering ◽  
Carrier Transport Properties

ABSTRACTWe have prepared device quality hydrogenated amorphous silicon (a-Si:H) films by DC magnetron reactive sputtering in an Ar+H2 atmosphere. The hydrogen content (CH) of these films ranges from ∼10 to ∼28 at.% (determined from IR absorption) and is controlled mainly by the hydrogen partial pressure in the discharge. The electron and hole transport, and the density of defect states show that these films are suitable for solar cell applications. In this report we will emphasize the carrier transport properties of the films. The electron drift mobilities, determined by time-of-flight experiments, are between 0.5 and 2 cm2/V-sec. The minority carrier (hole) mobility-recombination lifetime product, (μτrec)p, has been determined on Schottky barrier structures from a fit of the voltage dependence of the photocurrent to the Hecht expression. This measurement gives results of (μτrec)p ∼ 0.9- 3×10−8 cm2/V. The density of deep-level defect states for these films (10≤CH≤28), measured with CPM, is between ∼1×1015 and ∼1×1016 cm−3. The AM-1 photoconductivity is in the range from 0.8−3.5×10−5 (Ω-cm)−1 and the dark conductivity decreases from ∼1×10−9 to ∼1×10−12 (Ω-cm)−l as the hydrogen content (CH) increases. These results show that device quality a-Si:H films can be grown by the DC magnetron reactive sputtering technique.

Dominance of c-axis orientation on the carrier transport properties of Sn doped ZnO thin films

2021 ◽  
Vol 722 ◽  
pp. 138579
Author(s):  
Felcy Jyothi Serrao ◽  
Navin N. Bappalige ◽  
K.M. Sandeep ◽  
S. Raghavendra
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Carrier Transport ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Doped Zno ◽  
Carrier Transport Properties

Influence of Oxygen Annealing on Electrical Properties of ZnO:Cl Thin Films

2007 ◽  
Vol 994 ◽  
Author(s):  
Tamar Tchelidze ◽  
Ekaterine Chikoidze ◽  
Francois Jomard ◽  
Ouri Gorochov ◽  
Pierre Galtier
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Transport Properties ◽  
Chemical Reactions ◽  
Vapour Pressure ◽  
Carrier Transport ◽  
Oxygen Annealing ◽  
Oxygen Treatment ◽  
Different Temperatures ◽  
Carrier Transport Properties

AbstractThe influence of oxygen treatment on carrier transport properties of pure ZnO and ZnO:Cl thin films grown by MOCVD were studied. The experimentally obtained values of carrier concentrations after oxyden treatment at different temperatures, were compared with the the results obtained from thermodynemical analysis of the system: ZnO:Cl-Oxyen vapour pressure, using method of quasi-chemical reactions (QCR).

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