Crystal Structure of and Defects in the Pentacene Thin Film Phase

2002 ◽  
Vol 734 ◽  
Author(s):  
Lawrence F. Drummy ◽  
Paul K. Miska ◽  
David C. Martin
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Resolution Electron Microscopy ◽  
Orthorhombic Symmetry ◽  
Extended Defects ◽  
X Ray Diffraction ◽  
Voltage Electron ◽  
Resolution Electron

The aromatic hydrocarbon pentacene is currently under investigation for use as the active layer in electronic devices such as thin film field effect transistors. We have used X-Ray Diffraction (XRD), Electron Diffraction (ED), Low Voltage Electron Microscopy (LVEM), High Resolution Electron Microscopy (HREM) and molecular modeling to investigate the thin film phase of pentacene. We will report the orthorhombic symmetry and lattice parameters of the thin film phase measured experimentally from these techniques. The structure of extended defects such as dislocations and grain boundaries will influence the electrical and mechanical characteristics of the films. Here we show a direct image of an edge dislocation in the thin film phase and discuss the way in which the lattice accommodates the defect.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

Transmission electron microscopy observation in a liquid-phase-sintered SiC with oxynitride glass

2001 ◽  
Vol 16 (8) ◽  
pp. 2189-2191 ◽  
Author(s):  
Guo-Dong Zhan ◽  
Mamoru Mitomo ◽  
Young-Wook Kim ◽  
Rong-Jun Xie ◽  
Amiya K Mukherjee
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
High Resolution Electron Microscopy ◽  
Nitrogen Atmosphere ◽  
X Ray Diffraction ◽  
Sintering Additive ◽  
Transmission Electron ◽  
High Annealing ◽  
Resolution Electron ◽  
Oxynitride Glass

Using a pure α–SiC starting powder and an oxynitride glass composition from the Y–Mg–Si–Al–O–N system as a sintering additive, a powder mixture was hot-pressed at 1850 °C for 1 h under a pressure of 20 MPa and further annealed at 2000 °C for 4 h in a nitrogen atmosphere of 0.1 MPa. High-resolution electron microscopy and x-ray diffraction studies confirmed that a small amount of β–SiC was observed in the liquid-phase-sintered α–SiC with this oxynitride glass, indicating stability of β–SiC even at high annealing temperature, due to the nitrogen-containing liquid phase.

Kinetic Study on the Formation of the Aragonite-Like Phase Ba(CuOx)1-Y(CO3)y

1995 ◽  
Vol 398 ◽  
Author(s):  
A. Tomasi ◽  
E. Galvanetto ◽  
F.C. Matacotta ◽  
P. Nozar ◽  
P. Scardi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Analysis ◽  
High Resolution Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
Formation Kinetics ◽  
Resolution Electron ◽  
Thermal Analysis Techniques ◽  
Kinetics Of

ABSTRACTA systematic study on phase formation and stabilisation in the Ba-Cu-C-O system in the temperature range 20-500°C, under various atmospheres, by traditional thermal analysis techniques, high temperature X-ray diffraction and high resolution electron microscopy, has permitted to identify and characterise the formation kinetics of a new copper containing phase isomorphic to γ-BaCO3.

scholarly journals High Resolution Electron Microscopy Characterization of (La0.5Sr0.5)2CoC4 Thin Film Cathode Materials

2014 ◽  
Vol 20 (S3) ◽  
pp. 1912-1913
Author(s):  
F. Yang ◽  
Y. Chen ◽  
Z. Cai ◽  
N. Tsvetkov ◽  
M. Burriel ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
High Resolution ◽  
Cathode Materials ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Microscopy Characterization

Epitaxial Growth and Structure of Cubic and Pseudocubic Perovskite Films on Perovskite Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
P. A. Langjahr ◽  
T. Wagner ◽  
M. RÜhle ◽  
F. F. Lange
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Lattice Parameter ◽  
Ternary Oxide ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Resolution Electron

AbstractCubic and pseudocubic perovskite films on perovskite substrates are used to study the influence of the lattice mismatch on the epitaxial growth of thin films on substrates of the same structure. For the growth of the films, a metalorganic decomposition route (MOD) using 2-ethylhexanoates and neodecanoates as precursors, was developed. The decomposition of the precursors was investigated with thermogravimetric analysis (TGA) and x-ray diffraction (XRD). The films were spin-coated on (001)-oriented SrTiO3- and LaAlO3-substrates, pyrolyzed and afterwards annealed between 600°C and 1200°C. XRD-nvestigations and conventional transmission electron microscopy (CTEM) show, that epitaxial films with the orientation relationship [100](001) film ║ [100](001) substrate can be grown. With XRD, it could be shown, that not only ternary oxide films (SrZrO3, BaZrO3 and BaCeO3), but also perovskite solid solution films (SrTi0.5Zr0.5O3and BaCe0.5Zr0.5O3) can be prepared. Strong interdiffusion, detected by a shift of the film lattice parameter towards the substrate lattice parameter was found in SrZrO3- and BaZrO3-films on SrTiO3, annealed at temperatures above 1050°C. High resolution electron microscopy (HREM) studies of SrZrO3 on SrTiO3 show that a crystalline semicoherent interface with a periodical array of misfit dislocations is present.

High-Resolution Electron Microscopy of Extended Defects in Wurtzite Crystals

1994 ◽  
Vol 33 (Part 1, No. 2) ◽  
pp. 1114-1120 ◽  
Author(s):  
Kunio Suzuki ◽  
Masaki Ichihara ◽  
Shin Takeuchi
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Extended Defects ◽  
Resolution Electron
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