Influence of Metal Electrodes on the Ferroelectric Responses of Poly(vinylidene fluoride-trifluoroethylene) Copolymer Thin Films

2002 ◽  
Vol 734 ◽  
Author(s):  
Feng Xia ◽  
Q. M. Zhang

ABSTRACTFerroelectric polymer thin films have been investigated for applications such as sensors, MEMS, and memory devices, just name a few. In these thin film devices, it is anticipated that the interface effect will play an important role in determining the device performance. In this paper, we present the results of a recent study on the influence of metal electrodes on ferroelectric switching behavior of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer thin films. The results show that the influence of metal electrodes on the polarization response can be divided into two effects, the bulk effect and interface effect. The bulk effect manifests itself as the built-in bias field when metal electrodes with different work functions were used on the two surfaces of the P(VDF-TrFE) film. The interface effect is more complicated but is directly related to the metal work function. For a metal I/insulator (ferroelectric film)/metal II (MIM) sandwich structure in which the metal I and metal II possess different work functions, the low frequency polarization hysteresis loop shows asymmetric response (different switching fields). The polarization switching time also depends on whether the applied voltage is in parallel or anti-parallel to the built-in bias field. In the fast polarization switching process, it was observed that the interface effect plays a dominating role and the switching time is mainly limited by the charge injection from metal electrodes to the polymer film. For metal electrodes with higher work function, higher injection currents and hence faster polarization switching were observed. The results from I-V studies also show that the charge injection process is a Schottky type and the barrier height estimated from the temperature dependence of the I-V curves is consistent with the metal work functions used.

2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.


2010 ◽  
Vol 519 (4) ◽  
pp. 1441-1444 ◽  
Author(s):  
Sharon Roslyn Oh ◽  
Kui Yao ◽  
Choi Lan Chow ◽  
Francis Eng Hock Tay

2020 ◽  
Vol 52 (12) ◽  
pp. 1150-1155
Author(s):  
Sabine Apelt ◽  
Susanne Höhne ◽  
Petra Uhlmann ◽  
Ute Bergmann

2013 ◽  
Vol 12 (5) ◽  
pp. 433-438 ◽  
Author(s):  
Mengyuan Li ◽  
Harry J. Wondergem ◽  
Mark-Jan Spijkman ◽  
Kamal Asadi ◽  
Ilias Katsouras ◽  
...  

2008 ◽  
Vol 92 (1) ◽  
pp. 012921 ◽  
Author(s):  
Seok Ju Kang ◽  
Youn Jung Park ◽  
Jinwoo Sung ◽  
Pil Sung Jo ◽  
Cheolmin Park ◽  
...  

2015 ◽  
Vol 17 (19) ◽  
pp. 13082-13091 ◽  
Author(s):  
Pradip Thakur ◽  
Arpan Kool ◽  
Biswajoy Bagchi ◽  
Nur Amin Hoque ◽  
Sukhen Das ◽  
...  

Development of Ni(OH)2nanobelt modified electroactive PVDF thin films with colossal dielectric constantsviaa simplein situprocess.


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