Application Fields of SEM/SPM Hybridsystems: Nanoscopic EBIC and Near Field CL

2002 ◽  
Vol 738 ◽  
Author(s):  
Ralf Heiderhoff ◽  
Ingo Joachimsthaler ◽  
Ludwig J. Balk
Keyword(s):  
Electron Beam ◽  
Material Properties ◽  
Near Field ◽  
Thermal Analyses ◽  
Application Field ◽  
Induced Currents ◽  
Application Fields ◽  
Microscopy Techniques

ABSTRACTSPM/SEM-hybridsystems are more than only a combination of complementary microscopy techniques, because the used probes can simultaneously either be used as sensors, which give access to a vast variety of material properties, or as actuators, which can deliberately modify samples properties. The wide application field as well as flexibility is demonstrated exemplarily on techniques in microanalyses like nano-probing, cathodoluminescence, electron beam induced currents, and thermal analyses. These results provide an interesting perspective with respect to failure analyses and reliability of modern materials and devices.

Temperature Distribution and Fluid Flow Modeling of Electron Beam Melting® (EBM)

2012 ◽  
Author(s):  
M. Jamshidinia ◽  
F. Kong ◽  
R. Kovacevic
Keyword(s):  
Electron Beam ◽  
Fluid Flow ◽  
Temperature Distribution ◽  
Molten Pool ◽  
Electron Beam Melting ◽  
Control Volume ◽  
Thermal Analyses ◽  
Scanning Speed ◽  
Flow Modeling ◽  
Fluid Flow Modeling

A three-dimensional (3D) numerical model is developed by using control volume method to analyze the effects of the electron beam scanning speed on the temperature distribution and fluid flow of the liquid phase in the electron beam melting® (EBM) of Ti-6Al-4V powder. The numerical calculations are performed by Fluent codes, in which thermal analyses with and without considering fluid flow in the molten pool are compared. A series of experiments are performed with an Electron Beam Melting® machine to verify the numerical accuracy. Compared to thermal analysis without considering convection in the molten pool, a closer numerical prediction of geometrical size of molten pool to the experimental data can be achieved by using thermal and fluid flow modeling. The difference between the melt pool geometry in the two models is due to the consideration of the effects of the outward flow in the fluid flow model caused by surface tension.

Design of soft x-ray varied-line-spacing grating based on electron beam lithography-near field lithography

2016 ◽  
Author(s):  
Dakui Lin ◽  
Huoyao Chen ◽  
Stefanie Kroker ◽  
Thomas Käsebier ◽  
Zhengkun Liu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Near Field ◽  
X Ray ◽  
Line Spacing

Case-Study Inverse Thermal Analyses of Al2139 and Al2198 Electron Beam Welds

2013 ◽  
Vol 22 (11) ◽  
pp. 3175-3181 ◽  
Author(s):  
A. D. Zervaki ◽  
V. Stergiou ◽  
S. G. Lambrakos
Keyword(s):  
Electron Beam ◽  
Thermal Analyses

scholarly journals Far- and near-field electron beam detection of hybrid cavity-plasmonic modes in gold microholes

2012 ◽  
Vol 85 (4) ◽  
Author(s):  
I. Carmeli ◽  
M. A. Itskovsky ◽  
Y. Kauffmann ◽  
Y. Shaked ◽  
S. Richter ◽  
...  
Keyword(s):  
Electron Beam ◽  
Near Field ◽  
Field Electron ◽  
Hybrid Cavity

scholarly journals Mapping electron-beam-injected trapped charge with scattering scanning near-field optical microscopy

2016 ◽  
Vol 41 (5) ◽  
pp. 1046 ◽  
Author(s):  
Denis E. Tranca ◽  
Emilio Sánchez-Ortiga ◽  
Genaro Saavedra ◽  
Manuel Martínez-Corral ◽  
Syed A. M. Tofail ◽  
...  
Keyword(s):  
Electron Beam ◽  
Optical Microscopy ◽  
Near Field ◽  
Trapped Charge

Electron beam lithography of phase mask gratings for near field holographic production of optical fibre gratings

1997 ◽  
Vol 35 (1-4) ◽  
pp. 345-348 ◽  
Author(s):  
X. Liu ◽  
J.S. Aitchison ◽  
R.M. De La Rue ◽  
S. Thoms ◽  
L. Zhang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Optical Fibre ◽  
Electron Beam Lithography ◽  
Near Field ◽  
Phase Mask

scholarly journals Measurement of induced currents in radio frequency magnetic fields based on near field antenna perturbations

AIP Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 065202
Author(s):  
J. M. Jennings ◽  
A. Kar ◽  
R. Vaidyanathan
Keyword(s):  
Magnetic Fields ◽  
Radio Frequency ◽  
Near Field ◽  
Induced Currents

Photoconductive NSOM for mapping optoelectronic phases in nanostructures

Nanophotonics ◽  
2014 ◽  
Vol 3 (1-2) ◽  
pp. 19-31 ◽  
Author(s):  
Anshuman J. Das ◽  
Ravichandran Shivanna ◽  
K.S. Narayan
Keyword(s):  
Near Field ◽  
Functional Materials ◽  
Scanning Microscopy ◽  
Local Excitation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Current ◽  
Scanning Optical Microscopy ◽  
Microscopy Techniques ◽  
Current Monitoring

AbstractThe advent of optically functional materials with low-intensive processing methods is accompanied by a growing need for high resolution imaging to probe the inherent inhomogeneities in the underlying microstructure. Atomic force microscopy based techniques are typically utilized for imaging the surface of organic thin films, quantum dots and other nanomaterials with ultrahigh resolution. Several modes like conductive, Kelvin, electrostatic amongst others have been particularly successful in imaging the local current, potential and charge distribution of variety of systems. However, the functionality of photoconduction in these materials cannot be directly imaged by these modes alone. There is a requirement for a local excitation source or collection arrangement that is compatible with scanning microscopy techniques followed by a current monitoring mechanism. Near-field scanning optical microscopy (NSOM) possesses all the advantages of scanning microscopy and is capable of local excitation that overcomes the diffraction limit faced by conventional optical microscopes. Additionally, NSOM can be carried out on actual photoconductive two terminal and three terminal device structures to image local optoelectronic properties. In this review, we present the various geometries that have been demonstrated to perform photoconductive NSOM (p-NSOM). We highlight a representative set of important results and discuss the implications of photocurrent imaging in macroscopic device performance.

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