ZnO and ZnMgO Growth by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Mitsuaki Yano ◽  
Ken-ichi Ogata ◽  
FengPing Yan ◽  
Kazuto Koike ◽  
Shigehiko Sasa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Cell Temperature ◽  
Rich Region ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Simple Growth ◽  
Mg Content ◽  
Crystalline Growth

ABSTRACTCharacteristics of the ZnO and ZnMgO films grown by radical-source molecular beam epitaxy are reported. The ZnO films on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties, and n-type doping with Al was successfully performed up to 1020 cm–3. The Mg-content of ZnMgO alloys was found to be controlled by a simple growth mechanism as a function of Mg-cell temperature. The alloying in the ZnO-rich region resulted in single-crystalline growth although the photoluminescence characteristics at x = 0.22 suggested the presence of microscopic phase separation. Single-crystalline growth was also achieved on Si (111) substrates by using a CaF2 buffer layer to protect the Si-surface from oxidation.

Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 29 (3) ◽  
pp. 03A111 ◽  
Author(s):  
Seok Kyu Han ◽  
Hyo Sung Lee ◽  
Dong Seok Lim ◽  
Soon-Ku Hong ◽  
Nara Yoon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Sapphire Substrates ◽  
Gallium Doping

Properties of (11–20) a-plane ZnO films on sapphire substrates grown at different temperatures by plasma-assisted molecular beam epitaxy

2011 ◽  
Vol 519 (19) ◽  
pp. 6394-6398 ◽  
Author(s):  
Seok Kyu Han ◽  
Soon-Ku Hong ◽  
Jae Wook Lee ◽  
Jae Goo Kim ◽  
Myoungho Jeong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Sapphire Substrates ◽  
Different Temperatures

Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy

2003 ◽  
Vol 93 (4) ◽  
pp. 1961-1965 ◽  
Author(s):  
Takeshi Ohgaki ◽  
Naoki Ohashi ◽  
Hirofumi Kakemoto ◽  
Satoshi Wada ◽  
Yutaka Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Condition ◽  
Molecular Beam ◽  
Electric Properties ◽  
Condition Dependence ◽  
Zno Films ◽  
Sapphire Substrates

Thermal processing induced structural changes in ZnO films grown on (11&2macr;0) sapphire substrates using molecular beam epitaxy

2004 ◽  
Vol 1 (4) ◽  
pp. 868-871
Author(s):  
P. Fons ◽  
H. Tampo ◽  
K. Nakahara ◽  
A. Yamada ◽  
K. Matsubara ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Processing ◽  
Molecular Beam ◽  
Structural Changes ◽  
Zno Films ◽  
Sapphire Substrates

Growth of the Single-Crystalline ZnO Films on Si (111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

2001 ◽  
Vol 692 ◽  
Author(s):  
Kazuto Koike ◽  
Takanori Tanite ◽  
Shigehiko Sasa ◽  
Masataka Inoue ◽  
Mitsuaki Yano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Zno Films ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Si Substrates ◽  
Initial Stage

AbstractThis report describes the growth of single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy. X-ray diffraction measurement shows that c-axis oriented ZnO films are easily grown on Si (111) substrates. However, in-plane random rotational domains are included in the ZnO films due to the inevitable oxidation of substrate surface at the initial stage of ZnO growth. By employing a thin CaF2 buffer layer between the ZnO films and Si substrates, we have succeeded in suppressing the generation of rotational domains and in obtaining an intense ultraviolet photoluminescence even at room temperature. These results indicate that the use of CaF2 buffer layer is promising for the growth of device-quality ZnO films on Si (111) substrates.

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