Growth of the Single-Crystalline ZnO Films on Si (111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

2001 ◽  
Vol 692 ◽  
Author(s):  
Kazuto Koike ◽  
Takanori Tanite ◽  
Shigehiko Sasa ◽  
Masataka Inoue ◽  
Mitsuaki Yano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Zno Films ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Si Substrates ◽  
Initial Stage

AbstractThis report describes the growth of single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy. X-ray diffraction measurement shows that c-axis oriented ZnO films are easily grown on Si (111) substrates. However, in-plane random rotational domains are included in the ZnO films due to the inevitable oxidation of substrate surface at the initial stage of ZnO growth. By employing a thin CaF2 buffer layer between the ZnO films and Si substrates, we have succeeded in suppressing the generation of rotational domains and in obtaining an intense ultraviolet photoluminescence even at room temperature. These results indicate that the use of CaF2 buffer layer is promising for the growth of device-quality ZnO films on Si (111) substrates.

Twinning in epilayers of CdTe on Si: Influence of ZnTe buffer layer and substrate misorientation

1995 ◽  
Vol 399 ◽  
Author(s):  
A. Gray ◽  
N.K. Dhar ◽  
W. Clark ◽  
P. Charlton ◽  
J.H. Dinan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates

ABSTRACTX-ray diffraction spectra of CdTe epilayers grown with and without ZnTe buffer layers on <211> Si substrates by molecular beam epitaxy consist of 422 and 331 reflections. We interpret these as evidence for the existence of twins within the volume of a <211> oriented epilayer and show that twin volume is dependent on the ZnTe buffer layer and substrate misorientation.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Microstructural investigation of ZnO films grown on (111) Si substrates by plasma-assisted molecular beam epitaxy

2010 ◽  
Vol 312 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Sang Mo Yang ◽  
Seok Kyu Han ◽  
Jae Wook Lee ◽  
Jung-Hyun Kim ◽  
Jae Goo Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Microstructural Investigation ◽  
Si Substrates

Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 72 (5) ◽  
pp. 2006-2013 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Yoichiro Tarui ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Single Crystalline ◽  
Si Substrates ◽  
Gas Source

ZnO and ZnMgO Growth by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
Mitsuaki Yano ◽  
Ken-ichi Ogata ◽  
FengPing Yan ◽  
Kazuto Koike ◽  
Shigehiko Sasa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zno Films ◽  
Cell Temperature ◽  
Rich Region ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Simple Growth ◽  
Mg Content ◽  
Crystalline Growth

ABSTRACTCharacteristics of the ZnO and ZnMgO films grown by radical-source molecular beam epitaxy are reported. The ZnO films on a-plane sapphire substrates had a superior quality in crystallographic, optical and electrical properties, and n-type doping with Al was successfully performed up to 1020 cm–3. The Mg-content of ZnMgO alloys was found to be controlled by a simple growth mechanism as a function of Mg-cell temperature. The alloying in the ZnO-rich region resulted in single-crystalline growth although the photoluminescence characteristics at x = 0.22 suggested the presence of microscopic phase separation. Single-crystalline growth was also achieved on Si (111) substrates by using a CaF2 buffer layer to protect the Si-surface from oxidation.

scholarly journals Структурные и морфологичеcкие свойства гибридных гетероструктур на основе GaN, выращенного на "податливой" подложке por-Si(111)

2019 ◽  
Vol 53 (8) ◽  
pp. 1141
Author(s):  
П.В. Середин ◽  
Д.Л. Голощапов ◽  
Д.С. Золотухин ◽  
А.С. Леньшин ◽  
А.М. Мизеров ◽  
...  
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Semiconductor Device ◽  
Substrate Surface ◽  
Diameter Distribution ◽  
Two Dimensional ◽  
Si Substrates ◽  
Uniform Diameter ◽  
Substrate Temperatures

AbstractThe possibility of synthesizing integrated GaN/por-Si heterostructures by plasma-assisted molecular beam epitaxy without an A1N/Si buffer layer is demonstrated. The beneficial effect of the high-temperature nitridation of a silicon substrate before GaN growth on the crystal quality of the GaN/Si layers is shown. It is established that, to obtain two-dimensional GaN layers on Si(111), it is reasonable to use compliant por-Si substrates and low-temperature GaN seed layers with a 3D morphology synthesized by plasma-assisted molecular beam epitaxy at relatively low substrate temperatures under stoichiometric conditions and upon enrichment with nitrogen. In this case, a self-assembled array of GaN seed nanocolumns with a fairly uniform diameter distribution forms on the por-Si substrate surface. The basic GaN layers, in turn, should be grown at a high temperature under stoichiometric conditions upon enrichment with gallium, upon which the coalescence of nucleated GaN nanocolumns and growth of a continuous two-dimensional GaN layer are observed. The use of compliant Si substrates is a relevant approach for forming GaN-based semiconductor device heterostructures by plasma-assisted molecular beam epitaxy.

Plasma-Assisted Molecular-Beam Epitaxy of ZnO Films on (0001) Al2O3: Effects of the MgO Buffer Layer Thickness

2008 ◽  
Vol 53 (1) ◽  
pp. 271-275 ◽  
Author(s):  
Jae Goo Kim ◽  
Seok Kyu Han ◽  
Dong-Suk Kang ◽  
Sang Mo Yang ◽  
Soon-Ku Hong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Molecular Beam ◽  
Zno Films ◽  
Buffer Layer Thickness

Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

1997 ◽  
Vol 71 (21) ◽  
pp. 3111-3113 ◽  
Author(s):  
F. Hamdani ◽  
A. E. Botchkarev ◽  
H. Tang ◽  
W. Kim ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Surface Polarity

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

1994 ◽  
Vol 9 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
S.N. Basu ◽  
T. Lei ◽  
T.D. Moustakas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Electron Cyclotron ◽  
Si Substrates ◽  
Zinc Blende

The microstructures of GaN films, grown on (001) and (111) Si substrates by a two-step method using Electron Cyclotron Resonance assisted-Molecular Beam Epitaxy (ECR-MBE), were studied by electron microscopy techniques. Films grown on (001) Si had a predominantly zinc-blende structure. The GaN buffer layer, grown in the first deposition step, accommodated the 17% lattice mismatch between the film and substrate by a combination of misoriented domains and misfit dislocations. Beyond the buffer layer, the film consisted of highly oriented domains separated by inversion domain boundaries, with a substantial decrease in the defect density away from the interface. The majority of defects in the film were stacking faults, microtwins, and localized regions having the wurtzite structure. The structure of the GaN films grown on (111) Si was found to be primarily wurtzite, with a substantial fraction of twinned zinc-blende phase. Occasional wurtzite grains, misoriented by a 30°twist along the [0001] axis, were also observed. A substantial diffusion of Si was seen in films grown on both substrates.

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