Raman and magneto transport studies of MBE grown β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2

ABSTRACTIron disilicide shows great promise as a silicon based light emitter operating in the 1.3 to 1.5 μm wavelength range. However, there exists a number of questions related to the band structure and the ability to alloy and controllably dope the material both n and p type. In this paper we present Raman and magneto transport studies on β-FeSi2, β-(Fe1-xCrx)Si2, and β-(Fe1-xCox)Si2 grown by MBE. By comparing the spectra obtained for undoped and doped samples we provide a general overview of the effects of doping on the crystallinity of the material. The temperature dependent (4K<T<300K) magneto transport illustrates that Cr is a p-type dopant and Co is an n-type dopant in β-FeSi2.The temperature dependence of the resistivity indicates that the transport properties at higher temperatures are determined by free carriers whereas at lower temperatures impurity band conduction prevails.

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Magnetoresistance in Impurity Band Conduction Region of Strained p-Type Germanium

Journal of the Physical Society of Japan ◽

10.1143/jpsj.19.1745 ◽

1964 ◽

Vol 19 (9) ◽

pp. 1745-1745 ◽

Cited By ~ 6

Author(s):

Koichi Sugiyama

Keyword(s):

Impurity Band ◽

P Type ◽

Band Conduction

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Effects of impurity-band conduction on thermoelectric properties of lightly doped p-type CoSb3

Journal of Applied Physics ◽

10.1063/1.4898688 ◽

2014 ◽

Vol 116 (15) ◽

pp. 153710 ◽

Cited By ~ 7

Author(s):

Y. Kajikawa

Keyword(s):

Thermoelectric Properties ◽

Impurity Band ◽

P Type ◽

Band Conduction

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Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN

Applied Physics Letters ◽

10.1063/1.4747466 ◽

2012 ◽

Vol 101 (8) ◽

pp. 082106 ◽

Cited By ~ 49

Author(s):

Brendan Gunning ◽

Jonathan Lowder ◽

Michael Moseley ◽

W. Alan Doolittle

Keyword(s):

Impurity Band ◽

P Type ◽

Band Conduction ◽

Freeze Out

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Impurity band conduction in Mn-doped p type InAs single crystal

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2018.05.014 ◽

2018 ◽

Vol 84 ◽

pp. 115-118 ◽

Cited By ~ 2

Author(s):

Guiying Shen ◽

Youwen Zhao ◽

Yongbiao Bai ◽

Ding Yu ◽

Jingming Liu ◽

...

Keyword(s):

Single Crystal ◽

Impurity Band ◽

P Type ◽

Mn Doped ◽

Band Conduction

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Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.215 ◽

2020 ◽

Vol 1004 ◽

pp. 215-223

Author(s):

Hideharu Matsuura ◽

Rinya Nishihata ◽

Akinobu Takeshita ◽

Kohei Ogawa ◽

Tatsuya Imamura ◽

...

Keyword(s):

Temperature Dependence ◽

Hall Coefficient ◽

Bipolar Transistors ◽

Hopping Conduction ◽

Insulated Gate Bipolar Transistors ◽

Temperature Dependent ◽

Anomalous Temperature ◽

Temperature Ranges ◽

P Type ◽

Band Conduction

We investigate the temperature dependence of the resistivity and Hall coefficient for heavily Al-doped p-type 4H-SiC epilayers with Al concentrations (C_Al) of > 2E19 cm^−3, which are substrates for the collectors of insulated-gate bipolar transistors. The signs of the measured Hall co- efficients (R_H) changed from positive to negative at low temperatures. For epilayers with C_Al values of < 3E19 cm^−3, a negative R_H was observed in the hopping conduction region. In contrast, for epilayers with C_Al values of > 3E19 cm^−3, a negative R_H was observed in not only the hopping conduction region but also the band conduction region, which is a striking feature because the movement of free holes in the valence band should make R_H positive. For an epilayer with C_Al of 1.8E20 cm^−3, the sign of R_H clearly changed three times in the band conduction region. Moreover, the activation energies of the temperature-dependent R_H values were similar to those of the temperature-dependent resistivity in the corresponding temperature ranges, irrespective of the conduction mechanisms (band and hopping conduction).

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Galvanomagnetic Effects in p-Type Tellurium at Low Temperatures. III. – Impurity Band Conduction and Negative Magneto-resistance in Sb-Doped Crystals –

Journal of the Physical Society of Japan ◽

10.1143/jpsj.34.1548 ◽

1973 ◽

Vol 34 (6) ◽

pp. 1548-1560 ◽

Cited By ~ 9

Author(s):

Kôki Takita ◽

Takaaki Hagiwara ◽

Shoji Tanaka

Keyword(s):

Low Temperatures ◽

Impurity Band ◽

Galvanomagnetic Effects ◽

P Type ◽

Magneto Resistance ◽

Band Conduction

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The effect of static and modulated uniaxial constraint on impurity band conduction in p-type germanium

Canadian Journal of Physics ◽

10.1139/p82-014 ◽

1982 ◽

Vol 60 (1) ◽

pp. 102-108

Author(s):

B. A. Lombos ◽

M. Averous ◽

C. Fau ◽

J. Calas ◽

S. Charar

Keyword(s):

Fermi Level ◽

Transport Properties ◽

Impurity Band ◽

Uniaxial Stress ◽

Concentration Region ◽

Metallic Conduction ◽

Region 10 ◽

P Type ◽

Intermediate Concentration ◽

Band Conduction

Transport property measurements on p-type germanium, doped to be in the intermediate concentration region (1016 < NA < 1018 cm−3), were performed in the temperature range of 1.6–77 K under static (up to 337 MPa) and modulated (2.4 on 180 MPa) uniaxial compression. To elucidate the conduction mechanisms in this region the position of the Fermi level is calculated as a function of temperature and uniaxial stress and correlated to the variation of the measured transport properties. The analyses indicate an Anderson type metallic conduction, characteristic of random, amorphous systems, while the Fermi level is in the impurity band. Mott type metallic conduction, characteristic to periodic systems, determines the transport properties as the Fermi level moves out of the impurity band.

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