Electro-structural and Film Growth Properties of Room-temperature Deposited Indium-Tin-Oxide on Polymer Substrates

2002 ◽  
Vol 747 ◽  
Author(s):  
Sung Kyu Park ◽  
Jeong In Han ◽  
Dae Gyu Moon ◽  
Won Keun Kim ◽  
Min Gi Kwak
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Grain Structure ◽  
Growth Property ◽  
Polymer Substrates ◽  
Flexible Polymer ◽  
Ito Films

ABSTRACTElectrical and structural properties of indium-tin-oxide (ITO) films on flexible polymer substrates were investigated. Room temperature sputtered ITO films on polymer substrates are initially amorphous but become partially crystalline as oxygen partial pressure decreases under 1.5%. The crystallinity shows more (400) and (222) preferentially oriented textures as decreasing of oxygen pressure resulting in lower resistivity. Moreover, an interesting growth property similar to 3D growth mechanism including larger grain size and columnar-like grain structure was also observed. It is considered that the columnar-like grain structure is probably attributed to the poor surface morphology of polymer substrates Based on the experiments, we obtained high performance ITO films on a polycarbonate substrate including 3.8 × 10 –4 Ω-cm in resistivity and transmittance above 80% in the visible ranges at 0.2% oxygen partial pressure.

Analysis of ITO Films Deposited on Various Polymer Substrates for High-Resolution Plastic Film LCDs

2001 ◽  
Vol 685 ◽  
Author(s):  
Jeong In Han ◽  
Sung Kyu Park ◽  
Chan Jae Lee ◽  
Won Keun Kim ◽  
Min Gi Kwak
Keyword(s):  
Mechanical Properties ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Indium Tin Oxide ◽  
Rf Magnetron Sputtering ◽  
Optical Microscope ◽  
Polymer Substrate ◽  
Buffer Layers ◽  
Polymer Substrates ◽  
Ito Films

AbstractThe electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates are polyethersulfone(PES), polycarbonate(PC), polyethylene terephthalate(PET) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, in addition to the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties. They indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjustment of oxygen partial pressure and thermal annealing above 180 °C. As the results, we obtained 20-25 Ω/ of ITO films with a good transmittance (above 80%) under 0.2 % oxygen contents and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have rather high electrical resistance (40-45 Ω/ ) but have improved optical (more than 85%) and mechanical characteristics compared to the counterparts.

Properties of ITO films deposited by r.f.-PERTE on unheated polymer substrates—dependence on oxygen partial pressure

2003 ◽  
Vol 427 (1-2) ◽  
pp. 215-218 ◽  
Author(s):  
C. Nunes de Carvalho ◽  
G. Lavareda ◽  
E. Fortunato ◽  
A. Amaral
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Polymer Substrates ◽  
Ito Films

Amorphous to crystalline transition and optoelectronic properties of nanocrystalline indium tin oxide (ITO) films sputtered with high rf power at room temperature

2009 ◽  
Vol 355 (28-30) ◽  
pp. 1508-1516 ◽  
Author(s):  
V. Malathy ◽  
S. Sivaranjani ◽  
V.S. Vidhya ◽  
J. Joseph Prince ◽  
T. Balasubramanian ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Optoelectronic Properties ◽  
Rf Power ◽  
Ito Films

Room Temperature Growth of Indium Tin Oxide Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
Z. Chen ◽  
J. Hwang ◽  
R.K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
High Resistivity ◽  
Ito Films

AbstractThe characteristics of indium tin oxide (ITO) films grown at room temperature on (100) Si and Coming glass substrates by an in situ ultraviolet-assisted pulsed laser deposition (UVPLD) technique have been investigated. The most important parameter, which influenced the optical and electrical properties of the grown films, was the oxygen pressure. For oxygen pressure below 1 mtorr, films were metallic, with very low optical transmittance and rather high resistivity values. The resistivity value decreased when using higher oxygen pressures while the optical transmittance increased. The optimum oxygen pressure was found to be around 10 mtorr. For higher oxygen pressures, the optical transmittance was better but a rapid degradation of the electrical conductivity was noticed. X-ray photoelectron spectroscopy investigations showed that ITO films grown at 10 mtorr oxygen are fully oxidized. All of the grown films were amorphous regardless of the oxygen pressure used.

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