A Model of Chemical Mechanical Polishing: The Role of Inhibitors

2003 ◽  
Vol 767 ◽  
Author(s):  
Ed Paul
Keyword(s):  
Chemical Reaction ◽  
Chemical Mechanical Polishing ◽  
General Model ◽  
Surface Film ◽  
Mechanical Polishing ◽  
Mechanical Abrasion ◽  
Abrasion Rate

AbstractA previously presented model of CMP is extended to include the role of inhibitors. In CMP, a chemical reaction forms a surface film which is removed mechanically by abrasives. When inhibitor molecules bond to the surface film, the mechanical abrasion rate is reduced. The general model will be discussed, and then applied to W-CMP explaining differences in the reduction of polishing rates for different inhibitors.

ChemInform Abstract: Present and Future Role of Chemical Mechanical Polishing in Wafer Bonding

ChemInform ◽  
2010 ◽  
Vol 29 (31) ◽  
pp. no-no
Author(s):  
C. GUI ◽  
M. ELWENSPOEK ◽  
J. G. E. GARDENIERS ◽  
P. V. LAMBECK
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Future Role

Chemical Mechanical Polishing of Al and SiO2 Thin Films: The Role of Consumables

1999 ◽  
Vol 146 (12) ◽  
pp. 4647-4653 ◽  
Author(s):  
J. Hernandez ◽  
P. Wrschka ◽  
Y. Hsu ◽  
T. ‐S. Kuan ◽  
G. S. Oehrlein ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing
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