Transient Electrochemical Measurements During Copper Chemical Mechanical Polishing

2003 ◽  
Vol 767 ◽  
Author(s):  
Seung-Mahn Lee ◽  
Wonseop Choi ◽  
Valentin Craciun ◽  
Rajiv K. Singh
Keyword(s):  
Surface Layer ◽  
Reaction Kinetics ◽  
Chemical Mechanical Polishing ◽  
Copper Surface ◽  
Mechanical Polishing ◽  
Electrochemical Measurements ◽  
Chemically Modified ◽  
Modified Surface ◽  
Selection Of ◽  
Modified Surface Layer

AbstractChronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and the thickness of the chemically modified surface layer are strongly dependent on the chemistry of CMP slurry in the chemical aspect of CMP and play critical keys in the selection of the chemistry and its concentration. BTA and H2O2 enhanced the passivation kinetics, resulting in thinner layer on the copper surface. In addition, the reaction kinetics increased as pH decreased.

Effect of Nano-Size Silica Abrasives in Chemical Mechanical Polishing of Copper

2004 ◽  
Vol 816 ◽  
Author(s):  
Su-Ho Jung ◽  
Rajiv K. Singh
Keyword(s):  
Surface Layer ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Oxide Formation ◽  
Chemically Modified ◽  
Modified Surface ◽  
Nano Size ◽  
Modified Surface Layer

AbstractThe effect of nano-size silica abrasives in chemical mechanical polishing (CMP) of copper is studied in order to reduce mechanical stresses during polishing, which may minimize defects such as surface scratches, copper peeling, dishing and erosion. In order to achieve low stress polishing of copper while maintaining removal rate efficiency, the formation of chemically modified surface layer, which can be mechanically removed by small size and low hardness abrasives, is critical. Complexing agents play an important role in the formation of a removable surface layer in the presence of the oxidizer, which is responsible for oxide formation, and the inhibitor, which passivates the surface. A new removal mechanism is proposed by correlating results of surface roughness after polishing with removal and etch rates. The effects of large silica and alumina abrasives, ranging from 200-1000 nm in diameter, are also studied to compare the different removal mechanisms.

Experimental studies of fine-grained micas

Clay Minerals ◽  
1966 ◽  
Vol 6 (3) ◽  
pp. 219-228 ◽  
Author(s):  
P. G. Rouxhet ◽  
G. W. Brindley
Keyword(s):  
Surface Layer ◽  
Infrared Spectroscopy ◽  
Surface Area ◽  
Experimental Studies ◽  
Adsorbed Water ◽  
Grinding Process ◽  
Fine Grained ◽  
Chemically Modified ◽  
Modified Surface ◽  
Modified Surface Layer

AbstractThe water gained by two micas during a wet-grinding process (extra-water) has been evaluated. It was found to be proportional to the surface area and the amount was about 29 µmoles/m2 for a fluorphlogopite and about 16 µmoles/m2 for a muscovite. This estimation was made possible by eliminating the physically adsorbed water. The material contaminating the surfaces and the constitution water of muscovite were taken into account by the comparison of the two minerals and by the use of infrared spectroscopy in addition to thermovolumetric data. It is thought that the extra-water is related to a disordered and chemically modified surface layer of the particles. The bearing of these results on the nature of illite is indicated.

Efficiency enhancement of Cu 2 ZnSn(S,Se) 4 solar cells by S-modified surface layer

2017 ◽  
Vol 162 ◽  
pp. 21-29 ◽  
Author(s):  
Chung-Hao Cai ◽  
Shih-Yuan Wei ◽  
Wei-Chih Huang ◽  
Chia-Hao Hsu ◽  
Wei-Hao Ho ◽  
...  
Keyword(s):  
Surface Layer ◽  
Solar Cells ◽  
Efficiency Enhancement ◽  
Modified Surface ◽  
Modified Surface Layer

scholarly journals Efficient hard X-ray source using femtosecond plasma at solid targets with a modified surface

2004 ◽  
Vol 22 (3) ◽  
pp. 301-306 ◽  
Author(s):  
S.A. GAVRILOV ◽  
D.M. GOLISHNIKOV ◽  
V.M. GORDIENKO ◽  
A.B. SAVEL'EV ◽  
R.V. VOLKOV
Keyword(s):  
Experimental Data ◽  
Surface Layer ◽  
Laser Pulses ◽  
Hot Electron ◽  
High Contrast ◽  
X Ray ◽  
Corrugated Surface ◽  
Fs Laser ◽  
Modified Surface ◽  
Modified Surface Layer

Recent results on constructing of an efficient hard X-ray source using solid targets irradiated by high-contrast 200-fs laser pulses with an intensity above 1016W/cm2are presented. We used different solid targets with a laser- and electrochemically modified surface layer: craters, pyramidal cavities, porous silicon, gratings. Experimental data obtained confirms that using solid targets with a corrugated surface one can achieve a prominent increase both in the efficiency of hard X-ray generation (in the quanta range 2–30 keV) and in the hot electron temperature of plasma.

Corrosion Characteristics of Surface-Modified DET Magnesium Powders

2004 ◽  
Vol 449-452 ◽  
pp. 369-372
Author(s):  
W.S. Chung ◽  
W.Y. Yoon ◽  
Kwang Jin Kim
Keyword(s):  
Corrosion Resistance ◽  
Surface Layer ◽  
Current Density ◽  
Nacl Solution ◽  
Composition Distribution ◽  
Passive Behavior ◽  
Modified Surfaces ◽  
Modified Surface ◽  
Surface Modified ◽  
Modified Surface Layer

Magnesium powders having inactive surface layer have been processed easily and intentionally by DET under fluoride, chromate, and bromide salt. The modified surfaces play an important role in preventing contact with active environments to improve corrosion resistance of Magnesium powders; the image of the surface modified powders was observed using SEM. The composition distribution and characteristics was determined and analyzed by using XRD, XPS, and EIS. Compared with bare Magnesium, the Magnesium having chromate modified surface layer showed a more passive behavior such as smaller current density and nobler potential in 4wt% NaCl solution.

Some Mechanical Models of Chemical-Mechanical Polishing Processes

2012 ◽  
Vol 528 ◽  
pp. 33-44 ◽  
Author(s):  
Robert V. Goldstein ◽  
N.M. Osipenko
Keyword(s):  
Surface Layer ◽  
Chemical Mechanical Polishing ◽  
Mechanical Load ◽  
Mechanical Polishing ◽  
Polished Surface ◽  
Actual Problem ◽  
Current State ◽  
Mechanical Models ◽  
Analytical Review ◽  
Cmp Modeling

Chemical-mechanical polishing (CMP)-a perspective technology in fabrication of micro-and nanoelectronics elements, devices and systems. The development of models of CMP processes remains to be the actual problem. It is pointed out that known CMP models do not account for the features of chemical and mechanical mechanisms of interaction of active fluid and particles with a polished surface as well as an interaction of a viscoelastic pad with the surface. A description of the elementary acts of such interaction are absent in the available models. On the base of the analytical review of the current state of the theory and problems of (CMP) modeling some approaches were suggested to the problem accounting for the complex of the phenomena of different scales determining the polishing rate such as diffusion of slurry into the surface layer and restriction of time of chemical treatment of the surface by a rough pad being under the action of a mechanical load. A model of the CMP process was developed. Within the framework of this model a dependence of the polishing rate on the loading parameters was derived. The dependence generalizes the empirical Preston law.

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