Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals

2003 ◽  
Vol 770 ◽  
Author(s):  
Marc G. Spooner ◽  
Timothy M. Walsh ◽  
Robert G. Elliman
Keyword(s):  
Chemical Vapour Deposition ◽  
Silicon Nanocrystals ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Optical Emission ◽  
Emission Source ◽  
Oxide Layers ◽  
Si Nanocrystals ◽  
Si Nanocrystal ◽  
Form Part

Abstractptical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO2, Si3N4 and SiOx layers. The nanocrystals are formed within Si-rich oxide layers (SiOx) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO2/Si3N4 layers or alternate SiO2/SiOx layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.

Nonlinear optical properties of plasma enhanced chemical vapour deposition grown silicon nanocrystals

2002 ◽  
Vol 722 ◽  
Author(s):  
G. Vijaya Prakash ◽  
M. Cazzanelli ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
F. Iacona ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapour Deposition ◽  
Silicon Nanocrystals ◽  
Nonlinear Optical ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Nonlinear Optical Properties ◽  
Nonlinear Susceptibility ◽  
Closed Aperture ◽  
Third Order

AbstractWe present a systematic study on the nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapour deposition (PECVD). The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility χ(3) of Si-nc are measured by Z-scan method. While the closed aperture Z-scan reveals a sign of positive nonlinearity, the open aperture measurements suggests a nonlinear absorption coefficients. Absolute values of χ(3) are in the order of 10-9 esu and show systematic correlation with the Si-nc size, due to quantum confinement related effects.

Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals

2008 ◽  
Vol 47 (1) ◽  
pp. 130-132 ◽  
Author(s):  
Konstantinos Koukos ◽  
Eléna Bedel-Pereira ◽  
Olivier Gauthier-Lafaye ◽  
Emmanuel Scheid ◽  
Laurent Bouscayrol ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Silicon Nanocrystals ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Photoluminescence Properties ◽  
Annealing Conditions ◽  
Pressure Chemical

Electrical and Memory Properties of Si3N4 MIS Structures with Embedded Si Nanocrystals

2008 ◽  
Vol 8 (2) ◽  
pp. 812-817 ◽  
Author(s):  
Zs. J. Horváth ◽  
P. Basa ◽  
T. Jászi ◽  
A. E. Pap ◽  
L. Dobos ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Memory Window ◽  
Initial Value ◽  
Window Width ◽  
Si Nanocrystals ◽  
Pressure Chemical ◽  
Control Layer ◽  
Mis Structures

Memory structures with an embedded sheet of separated Si nanocrystals were prepared by low pressure chemical vapour deposition using a Si3N4 control layer and different SiO2 or Si3N4 tunnel layers. It was obtained that Si nanocrystals improve the charging behaviour of the MNOS structures. Memory window width of 1.3 Vand 2.0 V were obtained for pulse amplitudes of ±9 V and ±10 V, 100 ms, respectively. The extrapolated memory window after 10 years is about 15% of its initial value.

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