Process control by optical emission spectroscopy during growth of a-C: H from a CH4 plasma by plasma-enhanced chemical vapour deposition

1994 ◽  
Vol 68-69 ◽  
pp. 702-707 ◽  
Author(s):  
C. Barholm-Hansen ◽  
M.D. Bentzon ◽  
M.E. Vigild ◽  
E. Findeisen ◽  
R. Feidenhans'l ◽  
...  
Keyword(s):  
Process Control ◽  
Chemical Vapour Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Optical Emission

Process Control of Laser Chemical Vapour Deposition of TiC on Tool Steel

1996 ◽  
pp. 703-710
Author(s):  
A. Hatziapostolou ◽  
I. Zergioti ◽  
E. Hontzopoulos ◽  
A. Zervaki ◽  
G. Haidemenopoulos
Keyword(s):  
Process Control ◽  
Chemical Vapour Deposition ◽  
Tool Steel ◽  
Vapour Deposition ◽  
Chemical Vapour

Effect of Microcavity Structures on the Photoluminescence of Silicon Nanocrystals

2003 ◽  
Vol 770 ◽  
Author(s):  
Marc G. Spooner ◽  
Timothy M. Walsh ◽  
Robert G. Elliman
Keyword(s):  
Chemical Vapour Deposition ◽  
Silicon Nanocrystals ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Optical Emission ◽  
Emission Source ◽  
Oxide Layers ◽  
Si Nanocrystals ◽  
Si Nanocrystal ◽  
Form Part

Abstractptical microcavity structures containing Si nanocrystals are fabricated by plasma enhanced chemical vapour deposition (PECVD) of SiO2, Si3N4 and SiOx layers. The nanocrystals are formed within Si-rich oxide layers (SiOx) by precipitation and growth, and the microcavity structures defined by two parallel distributed Bragg mirrors (DBM) made from either alternate SiO2/Si3N4 layers or alternate SiO2/SiOx layers. In the latter case, Si nanocrystal layers form part of the DBM structure thereby providing a distributed emission source. The optical emission from these and related structures are examined and compared with that from isolated nanocrystal layers.

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