Structural Defect-Related Photoluminescence in GaN

2003 ◽  
Vol 798 ◽  
Author(s):  
L. Chen ◽  
B. J. Skromme ◽  
M. K. Mikhov ◽  
H. Yamane ◽  
M. Aoki ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Bulk Material ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Excitation Intensity ◽  
Energy Peak ◽  
Bulk Gan ◽  
Low Temperature Photoluminescence

ABSTRACTBroad, low temperature photoluminescence (PL) peaks near 3.4–3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 37 (Part 1, No. 2) ◽  
pp. 626-631 ◽  
Author(s):  
Hisao Sato ◽  
Tomoya Sugahara ◽  
Maosheng Hao ◽  
Yoshiki Naoi ◽  
Satoshi Kurai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Pretreatment ◽  
Homoepitaxial Growth ◽  
Bulk Gan ◽  
Metalorganic Chemical

Arsenic Incorporation in Gallium Nitride grown by Metalorganic Chemical Vapor Deposition using Dimethylhydrazine and Tertiarybutylarsenic

2000 ◽  
Vol 622 ◽  
Author(s):  
S. Kellermann ◽  
K. M. Yu ◽  
E. E. Haller ◽  
E. D. Bourret-Courchesne
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Flow Ratio ◽  
As Doping ◽  
Mocvd Growth ◽  
Arsenic Incorporation

ABSTRACTMOCVD growth of As-doped GaN using dimethylhydrazine, triethylgallium and tertiarybutylarsenic has been investigated. A maximum doping concentration of 4.0 × 1019cm−3 at growth temperatures between 600°C and 800°C was obtained. At 1000°C the As doping level dropped below the SIMS detection limit of ∼1.0 × 1017cm−3. The As incorporation depended only weakly on variations of the V/III molar flow ratio between 11 and 61. Raising the As/V molar flow ratio from 0.01 to 0.06 increased the As concentration which then decreased by further increase to 0.11. Different morphologies of the layers were found depending on the growth conditions. A surfactant-like behavior of As was observed leading to smooth GaN films grown on top of the As-doped GaN layer. Two characteristic luminescence peaks at 3.31 eV and 3.425 eV were found for samples doped with As below 900°C. These spectral features are believed to originate at extended lateral defects - presumably stacking faults.

Effects of composition on the microstructure of YBa2Cu3O7−x thin films prepared by plasma-enhanced metalorganic chemical vapor deposition

1992 ◽  
Vol 7 (8) ◽  
pp. 1993-2002 ◽  
Author(s):  
P. Lu ◽  
J. Zhao ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
G.A. Kulesha ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Transmission Electron ◽  
The Matrix ◽  
Average Size ◽  
Metalorganic Chemical

The microstructures of (A) near stoichiometric, (B) Y-rich, and (C) Y- and Cu-rich YBa2Cu3O7−x thin films have been studied by high-resolution transmission electron microscopy. The films were deposited on (100) LaAlO3 by plasma-enhanced metalorganic chemical vapor deposition. In near stoichiometric films, microstructural features similar to those of thin films deposited by other techniques have been observed. These features which include epitaxial growth with the c-axis perpendicular to the substrate, twin boundaries on (110) planes, and stacking faults on (100) and (001) planes were also present in the off-stoichiometric materials. In Y-rich thin films, yttria (Y2O3) precipitates with an average size of about 5 nm have been identified in the matrix. The precipitates are uniformly distributed, have a high density as large as 1024/m3, and are highly oriented with respect to the matrix. In Y- and Cu-rich thin films, CuO particles up to 1 μm in size were observed on the surfaces of the films. The observed microstructural features were similar to those of the Y-rich materials.

Metalorganic Chemical Vapor Deposition of High Quality GaAs and AlGaAs Using Tertiarybutylarsine

1989 ◽  
Vol 145 ◽  
Author(s):  
G. Haacke ◽  
S. P. Watkins ◽  
H. Burkhard ◽  
C. J. Calbick ◽  
J. Quick
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality ◽  
Donor Acceptor ◽  
Line Widths ◽  
P Type ◽  
Low Temperature Photoluminescence ◽  
Undoped Gaas ◽  
Metalorganic Chemical

AbstractThis paper discusses recent improvements achieved in the growth of epitaxial layers of GaAs and AlGaAs using the liquid arsine substitute tertiarybutylarsine (TBA) and metal alkyls. The high purity TBA now available yields undoped GaAs with residual donor/acceptor concentrations in the low 1014 cm−3 range. Under optimized growth conditiorp the layers are either n-type and have 77*K mobilities up to 85,000 cm2 //Vs or they are compensated or p-type. For aluminum gallium arsenide, layers grown with TBA have properties similar to arsine-grown material as demonstrated by low temperature photoluminescence (PL). The PL efficiencies and line widths of the TBA-grown AlGaAs samples are comparable to those prepared with arsine.

Low Temperature Photoluminescence Properties Of In-Situ Zn Doped InP Layers Grown By Lp-Mocvd

1996 ◽  
Vol 442 ◽  
Author(s):  
Y. B. Moon ◽  
S. K. Si ◽  
E. Yoon ◽  
S. J. Kim
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Compensation Mechanism ◽  
Photoluminescence Properties ◽  
First Time ◽  
Low Temperature Photoluminescence ◽  
Metalorganic Chemical

AbstractIn situ Zn-doped InP layers are grown by low pressure metalorganic chemical vapor deposition at 620°C. Hole concentration increases with dopant flow rate, but reaches a saturated hole concentration of approximately 1.5 × 1018/cm3. Differently from the Zn-diffused InP case, photoluminescence (PL) of the in situ Zn doped InP shows band edge peak, e/D-A peak and distant D-A peak up to the hole concentration of 7.6 × 1017/cm3. These results can be explained by less generation of interstitial Zn atoms during in situ doping. PL characteristics of the in situ Zn-doped InP at the saturated hole concentration is extensively studied to explain its compensation mechanism. Two new deep bands, presumably responsible for the hole saturation behavior, are observed for the first time.

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