High-quality hydrogen-diluted a-SiNx:H films deposited by hot-wire chemical vapor deposition

ABSTRACTWe have studied the effect of H dilution on silicon nitride films deposited by the hot-wire chemical vapor deposition (HWCVD) technique using SiH4, NH3, and H2 gases. We found that H dilution significantly enhances the properties at silicon nitride films. The N content in the film increases by more than 2 times compared to the film without dilution, based on FTIR measurements. As a result, we can achieve high-quality a-SiNx:H films at low substrate temperature using a much lower gas ratio of NH3/SiH4(∼1) compared to a ratio of about 100 for conventional deposition by HWCVD. We also found that dilution decreases the H content in the films. More importantly, diluted SiNx films are conformal. Scanning electron microscopy measurements show a nearly 100% surface coverage over a sharp object. Electric breakdown measurement shows a well-insulated film with more then a few MV/cm for the breakdown field.

Download Full-text

Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD)

MRS Proceedings ◽

10.1557/proc-1036-m03-01 ◽

2007 ◽

Vol 1036 ◽

Author(s):

Stephan Warnat ◽

Markus Hoefer ◽

Lothar Schaefer ◽

Helmut Foell ◽

Peter Lange

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Electrical Breakdown ◽

Morphological Structure ◽

Chemical Vapor ◽

Hot Wire ◽

Silicon Nitride Films ◽

Deposition Processes ◽

Silicon Vias

AbstractSilicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in “through silicon vias” (TSV) technologies in combination with optical devices, which require very low temperatures (<200 °C), have been investigated. They reveal sufficiently good properties for the planned applications.

Download Full-text

Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide

MRS Proceedings ◽

10.1557/proc-284-3 ◽

1992 ◽

Vol 284 ◽

Cited By ~ 1

Author(s):

Ryoichi Ishihara ◽

Hiroshi Kanoh ◽

Yasutaka Uchida ◽

Osamu Sugiura ◽

Masakiyo Matsumura

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Gate Dielectric ◽

Chemical Vapor ◽

Atomic Ratio ◽

Breakdown Field ◽

Silicon Thin Film ◽

Silicon Nitride Films ◽

Low Field

ABSTRACTSilicon nitride films have been successfully deposited at a temperature as low as 300°C by chemical-vapor-deposition using tctra-silane (Si4 H10) and hydrogen azidc (HN3). Atomic ratio (N/Si) of the film deposited at 400°C was 1.47, i.e., the film was N-rich. Total hydrogen content was about 25atomic%. The breakdown-field strength was 6.5MV/cm at leakage-current density of 1μA/cm2, and the low-field resistivity was more than 1015 Ωcm. Similar electrical characteristics were obtained from films deposited at a temperature range between 300°C and 500°C. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transfer characteristics.

Download Full-text

High Hydrogen Content Silicon Nitride For Photovoltaic Applications Deposited By Hot-Wire Chemical Vapor Deposition

MRS Proceedings ◽

10.1557/proc-715-a10.2 ◽

2002 ◽

Vol 715 ◽

Cited By ~ 2

Author(s):

Jason K. Holt ◽

Maribeth Swiatek ◽

David G. Goodwin ◽

Harry A. Atwater ◽

Thomas J. Watson

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Chemical Vapor ◽

Flow Ratio ◽

Hot Wire ◽

Film Properties ◽

High Hydrogen ◽

Silicon Nitride Films ◽

Photovoltaic Applications

AbstractSilicon nitride films have been grown by hot-wire chemical vapor deposition and film properties have been characterized as a function of SiH4/NH3 flow ratio. Quadrupole mass spectrometry measurements revealed that NH3 should be present in large excess relative to SiH4 (<10), due to its lower decomposition probability on the wire. Silicon nitride films were produced with refractive indices ranging from 1.8-2.5 and H-content from 9-18 atomic % as the flow ratio increased from 1% to 8%. Fourier Transform Infrared Spectroscopy revealed a change from predominantly N-H to Si-H bonding as the flow ratio increases beyond 6%. Subsequent annealing studies showed different kinetics for H release from Si versus N. Films grown with a low SiH4/NH3 ratio were found to oxidize readily (23 atomic %), while larger ratios yielded no oxygen incorporation.

Download Full-text

High-quality silicon nitride films prepared by low-frequency plasma-enhanced chemical vapor deposition

10.1117/12.831014 ◽

2009 ◽

Cited By ~ 1

Author(s):

Huile Zhang ◽

Xiangdong Xu ◽

Yuping Leng ◽

Weizhi Li ◽

Zhiming Wu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Low Frequency ◽

Chemical Vapor ◽

High Quality ◽

Silicon Nitride Films ◽

Frequency Plasma

Download Full-text

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

MRS Proceedings ◽

10.1557/proc-508-151 ◽

1998 ◽

Vol 508 ◽

Author(s):

A. Izumi ◽

T. Ichise ◽

H. Matsumura

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Vapor Deposition ◽

Thin Film Transistors ◽

Chemical Vapor ◽

State Density ◽

Gate Insulator ◽

Catalytic Chemical Vapor Deposition ◽

Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Download Full-text