Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide

1992 ◽  
Vol 284 ◽  
Author(s):  
Ryoichi Ishihara ◽  
Hiroshi Kanoh ◽  
Yasutaka Uchida ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Atomic Ratio ◽  
Breakdown Field ◽  
Silicon Thin Film ◽  
Silicon Nitride Films ◽  
Low Field

ABSTRACTSilicon nitride films have been successfully deposited at a temperature as low as 300°C by chemical-vapor-deposition using tctra-silane (Si4 H10) and hydrogen azidc (HN3). Atomic ratio (N/Si) of the film deposited at 400°C was 1.47, i.e., the film was N-rich. Total hydrogen content was about 25atomic%. The breakdown-field strength was 6.5MV/cm at leakage-current density of 1μA/cm2, and the low-field resistivity was more than 1015 Ωcm. Similar electrical characteristics were obtained from films deposited at a temperature range between 300°C and 500°C. Amorphous silicon thin-film transistors equipped with this film as the gate dielectric showed good transfer characteristics.

High-quality hydrogen-diluted a-SiNx:H films deposited by hot-wire chemical vapor deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Fengzhen Liu ◽  
Lynn Gedvilas ◽  
Brian Keyes ◽  
Errol Sanchez ◽  
Shulin Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Surface Coverage ◽  
Chemical Vapor ◽  
Breakdown Field ◽  
Hot Wire ◽  
High Quality ◽  
Silicon Nitride Films ◽  
Gas Ratio

ABSTRACTWe have studied the effect of H dilution on silicon nitride films deposited by the hot-wire chemical vapor deposition (HWCVD) technique using SiH4, NH3, and H2 gases. We found that H dilution significantly enhances the properties at silicon nitride films. The N content in the film increases by more than 2 times compared to the film without dilution, based on FTIR measurements. As a result, we can achieve high-quality a-SiNx:H films at low substrate temperature using a much lower gas ratio of NH3/SiH4(∼1) compared to a ratio of about 100 for conventional deposition by HWCVD. We also found that dilution decreases the H content in the films. More importantly, diluted SiNx films are conformal. Scanning electron microscopy measurements show a nearly 100% surface coverage over a sharp object. Electric breakdown measurement shows a well-insulated film with more then a few MV/cm for the breakdown field.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

scholarly journals Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition

1995 ◽  
Vol 77 (12) ◽  
pp. 6534-6541 ◽  
Author(s):  
Sadanand V. Deshpande ◽  
Erdogan Gulari ◽  
Steven W. Brown ◽  
Stephen C. Rand
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Hot Filament

Preparation of Plasma Chemical Vapor Deposition Silicon Nitride Films from SiH2F2and NH3Source Gases

1991 ◽  
Vol 30 (Part 2, No. 4A) ◽  
pp. L619-L621 ◽  
Author(s):  
Nobuaki Watanabe ◽  
Mamoru Yoshida ◽  
Yi-Chao Jiang ◽  
Tutomu Nomoto ◽  
Ichimatsu Abiko
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Nitride Films

Low Temperature Silicon Nitride Films Deposited on 3D Topography by Hot Wire Chemical Vapor Deposition (HWCVD)

2007 ◽  
Vol 1036 ◽  
Author(s):  
Stephan Warnat ◽  
Markus Hoefer ◽  
Lothar Schaefer ◽  
Helmut Foell ◽  
Peter Lange
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Electrical Breakdown ◽  
Morphological Structure ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Silicon Nitride Films ◽  
Deposition Processes ◽  
Silicon Vias

AbstractSilicon nitride films were deposited by hot-wire chemical vapor deposition processes (HW-CVD). The films reveal a morphological structure very similar to nitrides formed in low pressure CVD (LP-CVD) or plasma enhanced CVD (PE-CVD) processes. The electrical breakdown voltages, however, are much smaller for HW- than PE- or LPCVD films. The deposition in holes for isolation purpose in “through silicon vias” (TSV) technologies in combination with optical devices, which require very low temperatures (<200 °C), have been investigated. They reveal sufficiently good properties for the planned applications.

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

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