Highly-Insulating Ultra-Thin SiO2 Film Grown by VUV Photo-Oxidation

2004 ◽  
Vol 811 ◽  
Author(s):  
Atsuyuki Fukano ◽  
Hiroyuki Oyanagi
Keyword(s):  
Low Temperatures ◽  
Silicon Oxide ◽  
Wavelength Dependence ◽  
Sio2 Film ◽  
Electrical Characteristics ◽  
Growth Technique ◽  
Photo Oxidation ◽  
Highly Correlated ◽  
Conventional Limit ◽  
Dense Films

ABSTRACTInsulating performance of high-density SiO2 films on Si(100) wafer grown by VUV irradiation in oxygen atmosphere at low-temperatures (300 ∼ 400°C) is reported. Comparing the SiO2 films grew with various wavelength irradiation, i.e., 126, 172 and 222nm, we found a strong wavelength dependence in density and insulating performance. The results suggest that electrical characteristics are highly correlated with film density. Higher density films are formed by shorter wavelength photo-oxidation whereas higher breakdown voltage and lower leakage current are achieved by the dense films. This shows that lower density of defects, dangling bonds, existing at the Si-O interface strongly affects the insulating performance. VUV photo-oxidation is a promising silicon oxide growth technique with greater insulating performance beyond the conventional limit for thermally oxidized films.

Synthesis and Characterization of Nano Titania Powder with High Photoactivity for Gas-Phase Photo-oxidation of Benzene from TiOCl2Aqueous Solution at Low Temperatures

Langmuir ◽  
2004 ◽  
Vol 20 (25) ◽  
pp. 10838-10844 ◽  
Author(s):  
Yuanzhi Li ◽  
Nam-Hee Lee ◽  
Doo-Sun Hwang ◽  
Jae Sung Song ◽  
Eun Gu Lee ◽  
...  
Keyword(s):  
Gas Phase ◽  
Low Temperatures ◽  
Synthesis And Characterization ◽  
Photo Oxidation ◽  
Titania Powder ◽  
Oxidation Of Benzene

scholarly journals Cathodoluminescence Spectroscopic Stress Analysis for Silicon Oxide Film and Its Damage Evaluation

Materials ◽  
2020 ◽  
Vol 13 (20) ◽  
pp. 4490
Author(s):  
Shingo Kammachi ◽  
Yoshiharu Goshima ◽  
Nobutaka Goami ◽  
Naoaki Yamashita ◽  
Shigeru Kakinuma ◽  
...  
Keyword(s):  
Stress Analysis ◽  
Silicon Oxide ◽  
Stress Measurement ◽  
Irradiation Time ◽  
Peak Position ◽  
Sio2 Film ◽  
Uniaxial Tensile ◽  
Measurement Tool ◽  
Uniaxial Tensile Test ◽  
Sio2 Thin Film

We describe the stress analysis of silicon oxide (SiO2) thin film using cathodoluminescence (CL) spectroscopy and discuss its availability in this paper. To directly measure the CL spectra of the film under uniaxial tensile stresses, specially developed uniaxial tensile test equipment is used in a scanning electron microscope (SEM) equipped with a CL system. As tensile stress increases, the peak position and intensity proportionally increase. This indicates that CL spectroscopy is available as a stress measurement tool for SiO2 film. However, the electron beam (EB) irradiation time influences the intensity and full width at half maximum (FWHM), which implies that some damage originating from EB irradiation accumulates in the film. The analyses using Raman spectroscopy and transmission electron microscopy (TEM) demonstrate that EB irradiation for stress measurement with CL induces the formation of silicon (Si) nanocrystals into SiO2 film, indicating that CL stress analysis of the film is not nondestructive, but destructive inspection.

The wavelength dependence of the photo-oxidation of CH2O

1987 ◽  
Vol 40 (1) ◽  
pp. 23-29
Author(s):  
Jayant Desai ◽  
Julian Heicklen
Keyword(s):  
Wavelength Dependence ◽  
Photo Oxidation
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