The interaction of C60 with Si(111) and Co/Si(111)
Keyword(s):
X Ray
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AbstractWe have studied the interaction of C60 with clean Si(111) and sub-monolayer Co covered Si(111) using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Our STM results indicate that C60 has little mobility at room temperature (RT) on Co/Si(111). After annealing to 450 °C, STM images show a regular arrangement of partially decomposed C60. XPS reveals a partial decomposition of C60 on Co/Si(111) at 520 °C, and total decomposition to form a SiC-3×3 phase at 720 °C. These results show that Co catalyses C60 decomposition resulting in the formation of the ordered SiC-3×3 phase ∼200 °C below that on clean Si(111).
2003 ◽
Vol 125
(26)
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pp. 8059-8066
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2017 ◽
Vol 19
(21)
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pp. 14020-14029
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2014 ◽
Vol 32
(4)
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pp. 641-647
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