In-situ Control of Nitrogen Content and the Effect on PL Properties of SiNx Films Grown by Ion Beam Sputter Deposition

2004 ◽  
Vol 817 ◽  
Author(s):  
Kyung Joong Kim ◽  
Dae Won Moon ◽  
Moon-Seung Yang ◽  
Jung H. Shin
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Visible Luminescence ◽  
Si Nanocrystals ◽  
Nitrogen Ion ◽  
Ion Beam Sputter Deposition

AbstractStrong visible luminescence was observed in silicon nitride (SiNx) thin films grown by ion beam sputter deposition (IBSD) using nitrogen ion as a sputtering source. Nitrogen content (x) of the films was controlled by variation of the sputtering N2 ion flux and analysed by in-situ x-ray photoelectron spectroscopy (XPS). Relative sensitivity factors of Si and N peaks could be calculated by Rutherford backscattering spectroscopy. The photoluminescence (PL) spectra of the post-annealed samples showed visible luminescence at blue-green region. PL energy showed a blue-shift due to quantum confinement with decreased excess Si and intensity showed a maximum value near x = 1.1. These PL properties are well correlated with the formation of Si nanocrystals (nc-Si). We found that there is a great increase of PL energy of SiNx thin films compared with SiOx thin films, which indicate that the surface state of Si nanocrystals plays an important role to increase PL energy and intensity.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Ion beam sputter deposition of layered magnetic thin films

1983 ◽  
Vol 35 (1-3) ◽  
pp. 89-92 ◽  
Author(s):  
J.W. Smits ◽  
H.A. Algra ◽  
U. Enz ◽  
R.P. van Stapele
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Magnetic Thin Films ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Processing-structure relations for ferroelectric thin films deposited by ion beam sputter deposition

1991 ◽  
Vol 116 (1) ◽  
pp. 35-49 ◽  
Author(s):  
Angus Kingon ◽  
Michael Ameen ◽  
Orlando Auciello ◽  
Kenneth Gifford ◽  
Husam Al-Shareef ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ferroelectric Thin Films ◽  
Ion Beam Sputter Deposition

Growth of single-phase nanostructured Er2O3 thin films on Si (100) by ion beam sputter deposition

2015 ◽  
Vol 283 ◽  
pp. 241-246 ◽  
Author(s):  
Wei Mao ◽  
Masaya Fujita ◽  
Takumi Chikada ◽  
Kenji Yamaguchi ◽  
Akihiro Suzuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Phase ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Characterization of nanocrystalline indium tin oxide thin films prepared by ion beam sputter deposition method

2010 ◽  
Vol 518 (23) ◽  
pp. 6891-6896 ◽  
Author(s):  
S. Venkatachalam ◽  
Hiroshi Nanjo ◽  
Fathy M.B. Hassan ◽  
Kazunori Kawasaki ◽  
Mitsuhiro Kanakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Deposition Method ◽  
Oxide Thin Films ◽  
Ion Beam Sputter Deposition

X-ray photoelectron and X-ray absorption spectroscopic study on β-FeSi2 thin films fabricated by ion beam sputter deposition

2010 ◽  
Vol 256 (10) ◽  
pp. 3155-3159 ◽  
Author(s):  
F. Esaka ◽  
H. Yamamoto ◽  
N. Matsubayashi ◽  
Y. Yamada ◽  
M. Sasase ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Study ◽  
Ion Beam ◽  
Sputter Deposition ◽  
X Ray ◽  
X Ray Absorption ◽  
Ion Beam Sputter Deposition

Electrical resistivity of RuOx thin films prepared by ion beam sputter deposition

1993 ◽  
Vol 65-66 ◽  
pp. 293-297 ◽  
Author(s):  
H. Kezuka ◽  
R. Egerton ◽  
M. Masui ◽  
T. Wada ◽  
T. Ikehata ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Variation of the deposition rate during ion beam sputter deposition of optical thin films

2005 ◽  
Vol 484 (1-2) ◽  
pp. 170-173 ◽  
Author(s):  
Hongxiang Liu ◽  
Shengming Xiong ◽  
Linghui Li ◽  
Yundong Zhang
Keyword(s):  
Thin Films ◽  
Deposition Rate ◽  
Ion Beam ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition
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