Growth and patterning of strontium-titanate-oxide thin films for optical devices applications

2004 ◽  
Vol 817 ◽  
Author(s):  
M. Gaidi ◽  
L. Stafford ◽  
M. Chaker ◽  
J. Margot ◽  
M. Kulishov
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Oxygen Pressure ◽  
Optical Waveguides ◽  
Argon Plasma ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Lower Oxygen ◽  
Pressure Regime

AbstractStrontium-titanate-oxide (STO) thin films have been deposited on silicon substrates by means of a reactive pulsed-laser-deposition technique. The influence of the oxygen deposition pressure on the microstructural properties of the films has been investigated by means of various characterization techniques. It was found that the crystalline quality of the film significantly deteriorates as the oxygen pressure increases. This is accompanied by an increase of the film microporosity. The microstructure of the film is found to directly impact the optical quality of the films. In particular, due to the higher density and crystallinity of the films deposited at lower oxygen pressure, films characterized by lower optical losses can be achieved in such conditions. These films have been used in the context of the development of optical waveguides. For this purpose, patterning of the STO films was investigated using sputter-etching with a high-density argon plasma operated in the very low pressure regime. Highly anisotropic features have been produced with high etch rate and good selectivity over resist. Preliminary results indicate the STO films can be successfully incorporated in functional waveguides.

Fabrication of Sol-Gel Derived Ferroelectric Plzt (9/65/35) Optical Waveguides

1991 ◽  
Vol 243 ◽  
Author(s):  
P.F. Baude ◽  
C. Ye ◽  
T. Tamagawa ◽  
D.L. Polla
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Ion Beam ◽  
Sol Gel ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Deposition Technique ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Film Cracking

AbstractCrack free transparent ferroelectric PLZT (9/65/35) thin films were deposited on silicon substrates using the sol-gel deposition technique. An intermediate layer of PLT was used to improve the PLZT's optical quality and to reduce the amount of film cracking. Wet chemical, plasma and reactive ion etching are investigated as means of realizing the necessary waveguide structures. Waveguiding is observed in 2-4mm long PLZT (9/65/35) fabricated by reactive ion beam etching.

Reactive coevaporation of YBaCuO superconducting films

1991 ◽  
Vol 6 (4) ◽  
pp. 682-698 ◽  
Author(s):  
V. Matijasevic ◽  
P. Rosenthal ◽  
K. Shinohara ◽  
A.F. Marshall ◽  
R.H. Hammond ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Deposition Temperature ◽  
Superconducting Films ◽  
Growth Conditions ◽  
Substitution Model ◽  
Average Composition ◽  
Impurity Phases ◽  
Lower Oxygen ◽  
Y Substitution

Growth conditions for YBaCuO thin films are investigated. Films have been made by reactive e-beam coevaporation using three metal sources. In the best cases, as-made films are superconducting with Tc's (R = 0) up to 90 K and Jc's (at 4.2 K) above 107 A/cm2. Oxygen pressure, deposition temperature, as well as compositional dependencies of the films are presented. It is found that in conditions of lower oxygen, pressure films with average composition off the 1–2–3 stoichiometry have higher Tc's. For pressure <10 mTorr, the highest Tc obtained is for Ba/Y deposition ratio ⋚1.4. The morphology and impurity phases of these films are examined. The Ba-deficient films have oriented CuYO2 and CuO as the dominant impurity phases. C-axis lattice parameters (c0) are also examined. It is found that for a given Tc, films made at lower pressure have c0's which are expanded compared to the films made at higher pressures (>100 mTorr). The expanded c0's for these films cannot be reduced by a low temperature oxygen anneal. We suggest that metal-atom point-like defects are quenched into these films and we discuss a particular Ba-for-Y substitution model.

scholarly journals III-V nanowires with quantum dots: MBE growth and properties

2021 ◽  
Vol 2015 (1) ◽  
pp. 012124
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Optoelectronic Devices ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Mbe Growth ◽  
Pl Spectrum ◽  
Good Optical Quality

Abstract We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the results showed that ~ 100% of homogeneously oriented NWs were formed with good optical quality of this system on a Si(111). PL spectrum peak near 1.3 μm indicates that such system is promising for optoelectronic devices.

scholarly journals GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrea Ballabio ◽  
Sergio Bietti ◽  
Andrea Scaccabarozzi ◽  
Luca Esposito ◽  
Stefano Vichi ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Thermal Strain ◽  
Gaas Layer ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Phase Boundaries ◽  
High Optical Quality ◽  
Quantum Well Structures ◽  
Si Substrates

AbstractWe demonstrate the growth of low density anti-phase boundaries, crack-free GaAs epilayers, by Molecular Beam Epitaxy on silicon (001) substrates. The method relies on the deposition of thick GaAs on a suspended Ge buffer realized on top of deeply patterned Si substrates by means of a three-temperature procedure for the growth. This approach allows to suppress, at the same time, both threading dislocations and thermal strain in the epilayer and to remove anti-phase boundaries even in absence of substrate tilt. Photoluminescence measurements show the good uniformity and the high optical quality of AlGaAs/GaAs quantum well structures realized on top of such GaAs layer.

STRUCTURAL AND OPTICAL PROPERTIES OF ZnO SYNTHESIZED BY TEMPERATURE GRADIENT THERMAL OXIDATION

2010 ◽  
Vol 17 (05n06) ◽  
pp. 497-503 ◽  
Author(s):  
F. K. YAM ◽  
S. S. TNEH ◽  
Y.-Q. CHAI ◽  
W. S. LAU ◽  
Z. HASSAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Temperature Gradient ◽  
Thermal Oxidation ◽  
Optical Quality ◽  
Annealing Process ◽  
Zno Thin Films ◽  
Structural And Optical Properties ◽  
Fixed Temperature

In this work, a series of polycrystalline ZnO samples have been synthesized from Zn thin films deposited on Si (100) substrates by using thermal oxidation technique. The ZnO thin film samples grown by this technique were then characterized by a variety of structural and optical characterization tools. The results revealed that the use of novel annealing process i.e. the application of temperature gradient in the thermal treatment could enhance the structural and optical quality of the ZnO thin films significantly as compared to the normal annealing process, i.e. a fixed temperature under different durations. Apart from the improvement of structural and optical properties of ZnO thin films, another striking feature of this novel annealing process was the promotion of the growth of ZnO nanostructures.

scholarly journals Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
A. El-Shaer ◽  
A. R. Abdelwahed
Keyword(s):  
Thin Films ◽  
Cuprous Oxide ◽  
Deposition Time ◽  
Optical Quality ◽  
Electrodeposition Technique ◽  
Transparent Conducting ◽  
Cupric Acetate ◽  
Potentiostatic Deposition

Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

Investigation of the Characteristics of Ferroelectric Thin Films Deposited by Pulsed Laser Ablation

1994 ◽  
Vol 361 ◽  
Author(s):  
S. Sengupta ◽  
D.P. Vijay ◽  
S.B. Desu
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Secondary Phase ◽  
Ferroelectric Thin Films ◽  
Laser Ablation Method ◽  
Target Composition ◽  
Lower Oxygen

ABSTRACTFerroelectric thin films of barium strontium titanate (BSTO) have been deposited on bare and metallized substrates by pulsed laser ablation method under different oxygen ambients (150 mT and 50 mT). Under an oxygen pressure of 150 mT, the film composition was similar to that of its ablation target composition, viz. Ba0.4TiO3. However, when the films were deposited under the lower oxygen pressure, x-ray diffraction studies showed the presence of a secondary phase. The electrical characteristics of the films were measured to examine the effect of the stoichiometry on the dielectric constant and tunability. The results of this study will be presented.

scholarly journals III-V nanostructures with different dimensionality on silicon

2021 ◽  
Vol 2103 (1) ◽  
pp. 012121
Author(s):  
R R Reznik ◽  
K P Kotlyar ◽  
V O Gridchin ◽  
I V Ilkiv ◽  
A I Khrebtov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Single Photons ◽  
Optical Elements ◽  
High Optical Quality ◽  
Bandgap Semiconductors ◽  
Optic Systems ◽  
The Given

Abstract The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that these objects are sources of single photons. In case of InP nanowires with InAsP quantum dots, the results we obtained indicate that nearly 100% of coherent nanowires can be formed with high optical quality of this system on a silicon surface. The presence of a band with maximum emission intensity near 1.3 μm makes it possible to consider the given system promising for further integration of optical elements on silicon platform with fiber-optic systems. Our work, therefore, opens new prospects for integration of direct bandgap semiconductors and singlephoton sources on silicon platform for various applications in the fields of silicon photonics and quantum information technology.

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