The Structure and Passivation Effects of Double-Positioning Twin Boundaries in CdTe

2005 ◽  
Vol 865 ◽  
Author(s):  
Yanfa Yan ◽  
M.M. Al-Jassim ◽  
K.M. Jones

AbstractUsing the combination of high-resolution transmission electron microscopy, first-principles density-functional total-energy calculations, and image simulations, we studied the atomic structure and passivation effects of double-positioning (DP) twin boundaries in CdTe. The DP twin boundaries are found to contain more Te dangling bonds than Cd dangling bonds, resulting in energy states in the bandgap that are detrimental to the electronic properties of CdTe. We found that I, Br, Cl, S, and O atoms present passivation effects on the DP twin boundaries to differing degrees, whereas H does not passivate the boundaries. Of all these impurities, I and Cl atoms present the best passivation effects on the DP twin boundaries. The superior passivation effects are realized by either terminating the Cd atoms with dangling bonds, or substituting the Te atoms with dangling bonds in the DP twin boundaries in CdTe by Cl and I atoms.

1989 ◽  
Vol 169 ◽  
Author(s):  
C. P. Burmester ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
V. Y. Lee ◽  
...  

AbstractHigh resolution transmission electron microscopy during in‐situ quenching of YBa2Cu3Oz is used to study the kinetics of microdomain formation during oxygen loss in this system. Image simulations based on atomic models of oxygen‐vacancy order in the basal plane of this material generated by Monte Carlo calculations are used to interpret high resolution micrographs of the structures obtained by quenching. The observed domain structures agree well with those obtained from the simualtions.


2002 ◽  
Vol 17 (1) ◽  
pp. 204-213 ◽  
Author(s):  
G. Y. Yang ◽  
J. M. Finder ◽  
J. Wang ◽  
Z. L. Wang ◽  
Z. Yu ◽  
...  

Microstructure in the SrTiO3/Si system has been studied using high-resolution transmission electron microscopy and image simulations. SrTiO3 grows heteroepitaxially on Si with the orientation relationship given by (001)STO//(001)Si and [100]STO//[110]Si. The lattice misfit between the SrTiO3 thin films and the Si substrate is accommodated by the presence of interfacial dislocations at the Si substrate side. The interface most likely consists of Si bonded to O in SrTiO3. The alternative presentation of Sr and Si atoms along the interface leads to the formation of 2× and 3× Sr configurations. Structural defects in the SrTiO3 thin film mainly consist of tilted domains and dislocations.


1998 ◽  
Vol 510 ◽  
Author(s):  
Dov Cohent ◽  
D.L. Medlin ◽  
C. Barry Carter

AbstractThe structure of planar defects in GaP films grown by MBE on Si (110) was investigated by transmission electron microscopy. Growth of GaP films on the (110) surface produced numerous microtwins which formed both first and second order twin boundaries. Using high-resolution transmission electron microscopy, the atomic structure of Σ=3 and Σ=9 twin boundaries were studied. Both the Σ=3 and Σ=9 interfaces were observed to facet along specific crystallographic planes. Geometric models of the Σ=9 {221} twin boundary accounting for different polar bonding configurations were proposed and compared with experimental observations.


1999 ◽  
Vol 5 (6) ◽  
pp. 420-427 ◽  
Author(s):  
U. Kaiser ◽  
A. Chuvilin ◽  
P.D. Brown ◽  
W. Richter

Abstract: High-resolution transmission electron microscopy (HRTEM) images of the [1–10] zone of cubic SiC layers grown by molecular beam epitaxy (MBE) often reveal regions of material exhibiting an unusual threefold periodicity. The same contrast was found in earlier works of Jepps and Page, who attributed this contrast in HRTEM images of polycrystalline SiC to the 9R-SiC polytype. In this report we demonstrate by HRTEM image simulations that the model of the 9R polytype and an alternative twinning model can fit qualitatively the experimental HRTEM images. However, by comparing the fast Fourier transform (FFT) patterns of the experiments and the simulations, as well as by using dark-field imaging, we show unambiguously that only the model of overlapping twinned 3C-SiC crystals fully agrees with the experiments.


Author(s):  
M. M. Tsai ◽  
J. M. Howe

Precipitation of γ-TiH in α-Ti-H alloys involves a hcp → fct lattice transformation with hydrogen as an interstitial diffusing element Results obtained from a previous TEM study have shown that the lengthening rate of γ-TiH is diffusionally controlled at 25°C, and possibly interfacially controlled at temperatures of 50°C and higher. Therefore, it is essential to ascertain the presence or absence of hydrogen atoms at the interface. TEM foils from a 800 ppm wt.% Ti-H alloy were analyzed using high-resolution TEM and image simulations in order to determine the effects of hydrogen on high-resolution images of the α-Ti/γ-TiH interface, and EELS was used to determine the whether the hydnde structure was fully formed up to the interface.


1998 ◽  
Vol 4 (S2) ◽  
pp. 382-383
Author(s):  
Michael A. O'Keefe

Now that correctors for objective lens spherical aberration are becoming feasible, questions have been raised about the usefulness of high-resolution transmission electron microscopy at zero Cs and the possible difficulties of interpretation of such images. In general, high resolution TEM images are interpreted either by comparison with simulations from model structures or by contrast transfer functions (CTFs) to determine the weight (and sense) of spatial contributions to images from corresponding diffracted beams. At zero Cs, HREM image simulations will work, but a projected charge density theory should be used (instead of CTF theory) to interpret images. Both theories use approximations; CTF theory relies on kinematic scattering and PCD theory on zero Cs and limited defocus.


2006 ◽  
Vol 12 (6) ◽  
pp. 492-497 ◽  
Author(s):  
Rolf Erni ◽  
Bert Freitag ◽  
Peter Hartel ◽  
Heiko Müller ◽  
Peter Tiemeijer ◽  
...  

Planar defects in a polycrystalline diamond film were studied by high-resolution transmission electron microscopy (HRTEM) and high-resolution scanning transmission electron microscopy (STEM). In both modes, sub-Ångström resolution was achieved by making use of two aberration-corrected systems; a TEM and a STEM CS-corrected microscope, each operated at 300 kV. For the first time, diamond in 〈110〉 zone-axis orientation was imaged in STEM mode at a resolution that allows for resolving the atomic dumbbells of carbon at a projected interatomic distance of 89 pm. Twin boundaries that show approximately the Σ3 CSL structure reveal at sub-Ångström resolution imperfections; that is, local distortions, which break the symmetry of the ideal Σ3 type twin boundary, are likely present. In addition to these imperfect twin boundaries, voids on the atomic level were observed. It is proposed that both local distortions and small voids enhance the mechanical toughness of the film by locally increasing the critical stress intensity factor.


Author(s):  
R. Gronsky

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.


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