Characterization of Process Uniformity and Control of Titanium Silicide Formed by Rapid Thermal Processing (RTP)

1987 ◽  
Vol 92 ◽  
Author(s):  
David Hodul David Hodul ◽  
Sandeep Mehta Sandeep Mehta
Keyword(s):  
Thermal Processing ◽  
Low Temperatures ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Film Properties ◽  
Rapid Annealing ◽  
Oxygen Contamination ◽  
Process Uniformity ◽  
And Control

ABSTRACTSputtered titanium films with thicknesses in the range of 300 to 1200Å were processed in a commercial rapid annealing system to form TiSi2 films. The films were first reacted at low temperatures (500-700°C), etched in ammonia/peroxide solution, and then reacted at 850-900°C to simulate a typical self-alignedsilicide (salicide) process. A method to correctfor dynamic temperature nonuniformities and the resulting etch nonuniformities will be discussed. Sheet resistance maps of the resulting films will be presented. In addition, film properties were measured as a function of annealing ambient in particular, the effects of oxygen contamination were studied.

Modeling, Identification, and Control of Rapid Thermal Processing Systems

1994 ◽  
Vol 141 (11) ◽  
pp. 3200-3209 ◽  
Author(s):  
Charles D. Schaper ◽  
Mehrdad M. Moslehi ◽  
Krishna C. Saraswat ◽  
Thomas Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
And Control

Characterization of PSG Films Reflowed in Steam Using Rapid Thermal Processing

1985 ◽  
Vol 52 ◽  
Author(s):  
N. Shah ◽  
J. M. C. Vittie ◽  
N. Sharif ◽  
J. Nulman ◽  
A. Gat
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Operating Regime ◽  
Junction Depth ◽  
Thermal Oxide ◽  
Rapid Thermal Annealer ◽  
Flow Cycle ◽  
Phosphosilicate Glass

ABSTRACTThis study describes the use of a steam environment to reflow phosphosilicate glass (PSG) samples using a HEATPULSE® rapid thermal annealer. The samples comprised PSG over poly steps and of open contacts in PSG. It was observed that reflow occurs 50°C lower in steam than in dry O2. An acceptable flow cycle for 8 w/o P in PSG glass is 1050°C for 10 seconds in steam, while for 6 w/o P PSG it is 1100°C for 10 seconds. Steam is found to be an effective amibient for densification of the PSG film. The thermal oxide grown in the contact during opening reflow was determined to be near 140 A. The operating regime for a junction depth <0.4 um and a reflow angle < 75° is presented for 8 w/o P.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Formation of titanium silicide films by rapid thermal processing

1983 ◽  
Vol 4 (10) ◽  
pp. 380-382 ◽  
Author(s):  
R.A. Powell ◽  
R. Chow ◽  
C. Thridandam ◽  
R.T. Fulks ◽  
I.A. Blech ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Titanium Silicide

Low-order modeling and dynamic characterization of rapid thermal processing

1992 ◽  
Vol 54 (4) ◽  
pp. 317-326 ◽  
Author(s):  
C. D. Schaper ◽  
Y. M. Cho ◽  
T. Kailath
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Dynamic Characterization ◽  
Low Order

Photoluminescence characterization of polycrystalline CuGaSe2 thin films grown by rapid thermal processing

1998 ◽  
Vol 51 (3-4) ◽  
pp. 371-384 ◽  
Author(s):  
J.H. Schön ◽  
O. Schenker ◽  
L.L. Kulyuk ◽  
K. Friemelt ◽  
E. Bucher
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing

Characterization of kesterite thin films fabricated by rapid thermal processing of stacked elemental layers using spatially resolved cathodoluminescence

2015 ◽  
Vol 582 ◽  
pp. 387-391 ◽  
Author(s):  
Ulrike Künecke ◽  
Christina Hetzner ◽  
Stefan Möckel ◽  
Hyesun Yoo ◽  
Rainer Hock ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Spatially Resolved

A parametric study of titanium silicide formation by rapid thermal processing

1996 ◽  
Vol 11 (2) ◽  
pp. 412-421 ◽  
Author(s):  
A. V. Amorsolo ◽  
P. D. Funkenbusch ◽  
A. M. Kadin
Keyword(s):  
Sheet Resistance ◽  
Parametric Study ◽  
Thermal Processing ◽  
Annealing Temperature ◽  
Rapid Thermal Processing ◽  
Titanium Silicide ◽  
Wet Etching ◽  
Silicide Formation ◽  
Temperature Variations ◽  
Sputter Etching

A parametric study of titanium silicide formation by rapid thermal processing was conducted to determine the effects of annealing temperature (650 °C, 750 °C), annealing time (30 s, 60 s), wet etching (no HF dip, with HF dip), sputter etching (no sputter etch, with sputter etch), and annealing ambient (Ar, N2) on the completeness of conversion of 60 nm Ti on (111)-Si to C54–TiSi2 based on sheet resistance and the uniformity of the sheet resistance measurements across the entire wafer. Statistical analysis of the results showed that temperature, annealing ambient, and sputter etching had the greatest influence. Increasing the temperature and using argon gas instead of nitrogen promoted conversion of the film to C54–TiSi2. On the other hand, sputter etching retarded it. The results also indicated significant interactions among these factors. The best uniformity in sheet resistance was obtained by annealing at 750 °C without sputter etching. The different sheet resistance profiles showed gradients that were consistent with expected profile behaviors, arising from temperature variations across the wafer due to the effect of a flowing cold gas and the effects of the wafer edge and flats.

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