Characterization of Shallow Junctions Fabricated by Gas Immersion Laser Doping (Gild)

1987 ◽  
Vol 92 ◽  
Author(s):  
P.G. Carey ◽  
J. E. Turner ◽  
K. Nauka ◽  
G. A. Reid ◽  
T. W. Sigmon
Keyword(s):  
Thermal Stresses ◽  
Secondary Ion Mass Spectrometry ◽  
Defect Density ◽  
Computer Modelling ◽  
Laser Energy ◽  
Deep Level ◽  
Laser Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

ABSTRACTThe viability of Gas Immersion Laser Doping (GILD) for VLSI processing of ultra shallow junctions is assessed using chemical, electrical and structural characterization of boron doped diodes. Diodes with good ideality factors (1.1) overarange of junction depths (50nm Xj 200 nm) have been fabricated by GILD. This process uses a pulsed XeCI excimer laserincident on a silicon surface saturated with B2H6.Dopant profiles as a function of laser energy and number of pulses aredetermined using Secondary Ion Mass Spectrometry(SIMS). For low energy or a large number of pulses, comparison with computer modelling suggests the junction is determined by melt depth. For higher laser energy and few pulses, liquid phase diffusion limits the depth of dopant incorporation.Leakage current measurements as a function of diode perimeter to area (P/A) ratio and Deep Level Transient Spectroscopy (DLTS) suggest that leakage occurs along the diode perimeter, and is dueto point defects generated from thermal stresses during melt regrowth. Diodes show good I-V characteristics after GILD alone, yet subsequent rapid thermal annealingisfound to further reduce leakage currents, probably due to relief of thermal stresses. Sheet carrier densities from Halleffect measurements show that 5 - 10% of the boron is activated, with doping levels exceeding 1020 cm−3 in some samples. Transmission Electron Microscopy (TEM) demonstrates that reasonable crystalline quality is maintained for moderate GILD conditions with a defect density at the surface of approximately 108 cm−2 .For higher laser energy with boron incorporation exceeding solid solubility, TEM shows stacking faults along <110>directions. Electron diffraction on highly doped samples shows extra spots indicating a high degree of strain in the doped layer.

Effect of Laser Thermal Processing on Defect Evolution in Silicon

2002 ◽  
Vol 717 ◽  
Author(s):  
Erik Kuryliw ◽  
Kevin S. Jones ◽  
David Sing ◽  
Michael J. Rendon ◽  
Somit Talwar
Keyword(s):  
Point Defects ◽  
Thermal Processing ◽  
Defect Formation ◽  
Secondary Ion Mass Spectrometry ◽  
Laser Energy ◽  
Process Window ◽  
Loop Formation ◽  
Transmission Electron ◽  
Ultra Shallow Junctions ◽  
Laser Thermal Processing

AbstractLaser Thermal Processing (LTP) involves laser melting of an implantation induced preamorphized layer to form highly doped ultra shallow junctions in silicon. In theory, a large number of interstitials remain in the end of range (EOR) just below the laser-formed junction. There is also the possibility of quenching in point defects during the liquid phase epitaxial regrowth of the melt region. Since post processing anneals are inevitable, it is necessary to understand both the behavior of these interstitials and the nature of point defects in the recrystallized-melt region since they can directly affect deactivation and enhanced diffusion. In this study, an amorphizing 15 keV 1 x 1015/cm2 Si+ implant was done followed by a 1 keV 1 x 1014/cm2 B+ implant. The surface was then laser melted at energy densities between 0.74 and 0.9 J/cm2 using a 308 nm excimer-laser. It was found that laser energy densities above 0.81 J/cm2 melted past the amorphous-crystalline interface. Post-LTP furnace anneals were performed at 750°C for 2 and 4 hours. Transmission electron microscopy was used to analyze the defect formation after LTP and following furnace anneals. Secondary ion mass spectrometry measured the initial and final boron profiles. It was observed that increasing the laser energy density led to increased dislocation loop formation and increased diffusion after the furnace anneal. A maximum loop density and diffusion was observed at the end of the process window, suggesting a correlation between the crystallization defects and the interstitial evolution.

Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

2013 ◽  
Vol 2 (5) ◽  
pp. P195-P204 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Masashi Okutani ◽  
Gota Murai ◽  
Shuji Tagawa ◽  
Hiroki Saikusa ◽  
...  
Keyword(s):  
Shallow Junctions ◽  
Ultra Shallow Junctions

Evidence and Characterization of Crystallographic Defect and Material Quality after SLIM-Cut Process

2011 ◽  
Vol 1323 ◽  
Author(s):  
Alex Masolin ◽  
Jan Vaes ◽  
Frederic Dross ◽  
Roberto Martini ◽  
Amaia Pesquera Rodriguez ◽  
...  
Keyword(s):  
Defect Density ◽  
Negative Impact ◽  
Deep Level ◽  
Silicon Substrates ◽  
Crystallographic Defect ◽  
Transient Spectroscopy ◽  
Electronic Activity ◽  
Crystallographic Defects

ABSTRACTThe SLIM-Cut process is a kerf-free wafering technique to obtain silicon substrates as thin as 50μm. The quality of the resulting material must be assessed to ensure that this innovative Si-foil approach does not jeopardize the potential efficiency of the final solar cell in terms of electronic activity, defect density and location. For that reason, we performed Microwave-Detected Photoconductance Decay (MW-PCD), Deep-Level Transient Spectroscopy (DLTS) and optical inspections after defect etching of the foils surface. Analyses indicate that SLIM-Cut generates crystallographic defects which create deep level traps that have a negative impact on the lifetime of the silicon foil. Nonetheless, a decrease of the thermal budget will lead to a reduction of plasticity and hence lower the amount of defects and increase the foil quality.

Optical characterization of laser processed ultra-shallow junctions

2003 ◽  
Vol 208-209 ◽  
pp. 277-284 ◽  
Author(s):  
G. Kerrien ◽  
M. Hernandez ◽  
C. Laviron ◽  
T. Sarnet ◽  
D. Débarre ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Electron Holography Characterization of Ultra-Shallow Junctions in 30-nm Gate-length MOS-FETs

2007 ◽  
Author(s):  
Nobuyuki Ikarashi ◽  
Makiko Oshida ◽  
Makoto Miyamura ◽  
Motofumi Saitoh ◽  
Akira Mineji ◽  
...  
Keyword(s):  
Electron Holography ◽  
Gate Length ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation

1996 ◽  
Vol 423 ◽  
Author(s):  
J. P. Doyle ◽  
M. O. Aboelfotoh ◽  
M. K. Linnarsson ◽  
B. G. Svensson ◽  
A. Schöner ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Doping Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Schottky Contacts ◽  
Structural Defects ◽  
Beam Irradiation ◽  
Transient Spectroscopy ◽  
Secondary Ion

AbstractElectrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by vapor phase epitaxy (VPE) with doping concentrations, the epitaxial layer having a doping concentration in the range of 1014 cm−3 to 1017cm−3. Numerous levels have been found in the as-grown n-type 6H-SiC samples and secondary ion mass spectrometry (SIMS) and MeV electron irradiation have been employed to corrrelate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.

Electron holographic characterization of ultra-shallow junctions in si for nanoscale MOSFETs

2003 ◽  
Vol 2 (2) ◽  
pp. 102-109 ◽  
Author(s):  
P.S. Chakraborty ◽  
M.R. McCartney ◽  
Jing Li ◽  
C. Gopalan ◽  
M. Gilbert ◽  
...  
Keyword(s):  
Shallow Junctions ◽  
Nanoscale Mosfets ◽  
Ultra Shallow Junctions
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