Characterization of Deep Level Defects in 4h and 6H SIC Via DLTS, SIMS And MEV E-Beam Irradiation

1996 ◽  
Vol 423 ◽  
Author(s):  
J. P. Doyle ◽  
M. O. Aboelfotoh ◽  
M. K. Linnarsson ◽  
B. G. Svensson ◽  
A. Schöner ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Doping Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Schottky Contacts ◽  
Structural Defects ◽  
Beam Irradiation ◽  
Transient Spectroscopy ◽  
Secondary Ion

AbstractElectrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by vapor phase epitaxy (VPE) with doping concentrations, the epitaxial layer having a doping concentration in the range of 1014 cm−3 to 1017cm−3. Numerous levels have been found in the as-grown n-type 6H-SiC samples and secondary ion mass spectrometry (SIMS) and MeV electron irradiation have been employed to corrrelate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.

scholarly journals Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
M. Gong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Surface Region ◽  
Structural And Electrical Properties ◽  
Transient Spectroscopy ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

scholarly journals Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects

2017 ◽  
Vol 897 ◽  
pp. 755-758 ◽  
Author(s):  
Mads E. Ingebrigtsen ◽  
Lasse Vines ◽  
Giovanni Alfieri ◽  
Andrei Mihaila ◽  
Uwe Badstübner ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Schottky Contacts ◽  
Conduction Band Edge ◽  
Leakage Currents ◽  
Main Charge ◽  
Current Voltage ◽  
Four Levels ◽  
Transient Spectroscopy ◽  
Secondary Ion

Electrical properties of Schottky contacts of high work-function metals (Pd, Au, and Ni) on (010) and (201) oriented β-Ga2O3 were investigated. Current-voltage characteristics reveal that all the contacts exhibit high rectifying behavior with ideality factors as low as 1.04. However, the reverse leakage currents were lower in the (010) samples compared to the (201) ones. Thermal admittance spectroscopy confirms a main charge carrier level to be at ~0.15 eV below the conduction band edge (Ec). Secondary ion mass spectrometry indicates that Si may be responsible for this donor level. Deep level transient spectroscopy reveals four levels (E1-E4) in the upper part of the band gap, with the corresponding energy level positions at 0.56, 0.76, 1.01, and 1.48 eV below Ec.

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

Z1/2- and EH6-Center in 4H-SiC: Not Identical Defects ?

2012 ◽  
Vol 717-720 ◽  
pp. 251-254 ◽  
Author(s):  
Bernd Zippelius ◽  
Alexander Glas ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Tsunenobu Kimoto ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Contacts ◽  
Double Peak ◽  
Carbon Vacancy ◽  
High Concentrations ◽  
Transient Spectroscopy ◽  
Dlts Spectra

Deep Level Transient Spectroscopy (DLTS) and Double-correlated DLTS (DDLTS) measurements have been conducted on Schottky contacts fabricated on n-type 4H-SiC epilayers using different contact metals in order to separate the EH6- and EH7-centers, which usually appear as a broad double peak in DLTS spectra. The activation energy of EH6(EC- ET(EH6) = 1.203 eV) turns out to be independent of the electric field. As a consequence, EH6is acceptor-like according to the missing Poole-Frenkel effect. Therefore, it can be excluded that the EH6-center and the prominent acceptor-like Z1/2-center belong to different charge states of the same microscopic defect as theoretically suggested. It is proposed that EH6is a complex containing a carbon vacancy and another component available at high concentrations. The activation energy of EH7(EC- ET(EH7) = 1.58 eV) has been evaluated indirectly by fitting the DLTS spectra of the EH6/7double peak taking the previously determined parameters of EH6into account.

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