Investigations of Microstructural Changes in Nickel Thin Films on Ionimplanted Silicon by Cross-Sectional Transmission Electron Microscopy with Intermittent Annealings in N2 Ambient
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ABSTRACTThe feasibility of studying dynamical changes in nickel thin films on ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N2 ambient up to 850 °C is demonstrated. Interactions of nickel thin films with oxidation induced stacking faults, fluorine bubbles and process-induced defects in ion implanted silicon are provided as examples. The technique may be applied to clarify a number of important issues encountered in the study of the reactions and diffusion of thin films and obtain informations otherwise unattainable.
1993 ◽
Vol 8
(11)
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pp. 2933-2941
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2008 ◽
Vol 57
(6)
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pp. 189-194
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1983 ◽
Vol 63
(1)
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pp. 47-57
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