Effects of Dopants on the Nucleation and Growth of NiSi2 on Silicon

1987 ◽  
Vol 94 ◽  
Author(s):  
S. W. Lu ◽  
C. W. Nieh ◽  
J. J. Chu ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Low Temperatures ◽  
Nucleation And Growth ◽  
The Other ◽  
Size Factor ◽  
Atomic Size ◽  
Nickel Thin Films ◽  
Transmission Electron

ABSTRACTThe influences of implantation impurities, including BF2, B, F, As and P on the formation of epitaxial NiSi2 in nickel thin films on ion-implanted silicon have been investigated by transmission electron microscopy.The presence of BF2, B, and F atoms was observed to promote the epitaxial growth of NiSi2 at low temperatures. Little or no effect on the formation of NiSi2 was found in samples implanted with As or P ions.The results indicated that the influences of the implantation impurities are not likely to be electronic in origin. Good correlation, on the other hand, was found between the atomic size factor and resulting stress and NiSi2 epitaxy at low temperatures.

Nucleation and Growth of the First Phase in Sputter-Deposited Nb/Al Multilayer Thin Films

1995 ◽  
Vol 398 ◽  
Author(s):  
K. Barmak ◽  
S. Vivekanand ◽  
F. Ma ◽  
C. Michaelsen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Nucleation And Growth ◽  
Grain Structure ◽  
Multilayer Thin Films ◽  
Product Phase ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Sputter Deposited

ABSTRACTThe formation of the first phase in the reaction of sputter-deposited Nb/Al multilayer thin films has been studied by power-compensated and heat-flux differential scanning calorimetry, x-ray diffraction and transmission electron microscopy. The modulation periods of the films are in the range of 10-500 nm. Both types of calorimetrie measurements, performed at a constant heating rate, show the presence of two peaks (A and B) for the formation of the single product phase, NbAl3. Isothermal calorimetrie scans show that peak A is associated with a nucleation and growth type transformation. The formation of NbAl3 is thus interpreted as a two-stage process of nucleation and lateral growth to coalescence (peak A) followed by normal growth until the consumption of one or both reactants (peak B). Transmission electron microscopy investigations of samples annealed into the first stage of NbAl3 formation show the presence of this phase at the Nb/Al interface and its preferential growth along the grain boundaries of the Al layer. The latter highlights the role of reactant phase grain structure in product phase formation.

Nonorthogonal Twining in Epitaxial SrRuO3 Thin Films Grown on (001) LaAlO3

2001 ◽  
Vol 7 (S2) ◽  
pp. 332-333
Author(s):  
W. Tian ◽  
J. C. Jiang ◽  
X. Q. Pan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Rf Sputtering ◽  
Perovskite Oxides ◽  
The Other ◽  
Formation Mechanisms ◽  
Spatially Resolved ◽  
Transmission Electron ◽  
Electron Energy Loss

Nonorthogonal twinings have commonly been observed in perovskite oxides such as SrTi03 and BaTi03. Among them, the ﹛111﹜ Σ3 type twining exists with a relative large amount of population and has been extensively studied. By combining quantitative high resolution transmission electron microscopy (HRTEM) and spatially resolved electron energy loss spectroscopy (EELS), one was able to determine the atomic structure of the ﹛111﹜Σ3 twin boundary in these oxides.[l] On the other hand, nonorthogonal twinings in SrRuO3 have been much less studied. SrRu03, a ternary ruthenium metal oxide, has a perovskite-compatible structure and exhibits low electrical resistivity (10-4 Ω•cm), showing an unparallel technique importance in microelectronic applications. Since the properties of material strongly depend on the microstructure and defect configurations, it is important to study the twining structures and their formation mechanisms in SrRuO3 thin films.Transmission electron microscopy (TEM) was used to study the SrRuO3 thin films grown on (001) LaAlO3 by 90° off-axis rf sputtering.

Microstructures of YBCO Thin Films Prepared by Pulsed Organometallic Beam Epitaxy

1992 ◽  
Vol 275 ◽  
Author(s):  
J. G. Hu ◽  
D. J. Miller ◽  
D. B. Buchholz ◽  
S. J. Duray ◽  
D. Schulz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
Low Temperatures ◽  
Controlled Growth ◽  
High Substrate ◽  
Ybco Thin Films ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThe microstructure of Y1Ba2Cu3Oy films and Y1Ba2Cu3Oy / Pr1Ba2Cu3Oy multilayers prepared by a pulsed organometallic beam epitaxy (POMBE) technique have been characterized by transmission electron microscopy (TEM). The microstructure of the films is observed to vary as a function of substrate temperature. At low temperatures, films are polycrystalline and exhibit some impurity phases. At higher substrate temperatures, films grow epitaxially with smooth surfaces and few impurities. Controlled growth at sufficiently high substrate temperatures allows uniform growth of alternating Y1Ba2Cu3Oy and Pr1Ba2Cu3Oy layers.

In Situ Studies of Nitridation of Cu/Ti Thin Films Using Environmental Cell in Transmission Electron Microscopy

1993 ◽  
Vol 317 ◽  
Author(s):  
R. Sharma ◽  
Z. Atzmon ◽  
J. Mayer ◽  
S. Q. Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Reaction Dynamics ◽  
Nucleation And Growth ◽  
Copper Particles ◽  
Transmission Electron ◽  
Environmental Cell

ABSTRACTCo-deposited Cu/Ti thin films were heated at various temperatures in an ammonia ambient in an environmental cell fitted in to the column of transmission electron Microscope (TEM). The reaction dynamics was observed in situ and recorded on video using a TV camera with 1/30 sec. time resolution. The nitridation of titanium accompanied by nucleation and growth of copper particles started at 370°C. Ti2N formed at lower temperatures while TiN was formed above 400°C. The nucleation of crystals occurred simultaneously (within a Minute) throughout the film indicating no effect of electron beam on reaction process. The growth rate of copper particles was observed to vary slightly from one particle to another indicating varying growth rate for different facets.

The Morphology of YBa2Cu3O7−x Thin Films Grown on Ceramic Substrates

1987 ◽  
Vol 99 ◽  
Author(s):  
L. A. Tietz ◽  
B. C. De Cooman ◽  
C. B. Carter ◽  
D. K. Lathrop ◽  
S. E. Russek ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Ion Beam ◽  
Substrate Surface ◽  
The Other ◽  
Ceramic Substrates ◽  
Transmission Electron ◽  
Beam Damage

ABSTRACTThe microstructure of thin films of the high Tc superconductor YBa2Cu3O7−x deposited on SrTiO3 and Y-stabilized cubic-zirconia (YSZ) single-crystal substrates has been characterized by transmission electron microscopy. Films on both substrates were polycrystalline. On {001 }-oriented SrTiO3, the grains are oriented with <110> normal to the substrate surface. On the same orientation of YSZ, two microstructures are observed: one in which grains have their c-axes normal to the substrate surface, the other in which grains have the a- (or b-) axis normal to the substrate surface. Both of these microstructures contain special grain boundaries. Annealing of ion-milled TEM specimens is presented as a means of removing ion-beam damage.

The Influence of Iron on the Physical and Mechanical Properties of β-Nial

1994 ◽  
Vol 364 ◽  
Author(s):  
Y. J. Lim ◽  
K. T. Hong ◽  
V. Levit ◽  
M. J. Kaufmann
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Transmission Electron Microscopy ◽  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Low Temperatures ◽  
Physical And Mechanical Properties ◽  
The Other ◽  
Resistivity Data ◽  
Transmission Electron

AbstractThe influence of iron on the the microstructure and properties of B2 NiAl has been investigated using electrical resistivity, magnetic susceptibility, microhardness and transmission electron microscopy. The resistivity data suggest that quenched-in vacancies (1) enhance iron rearrangement at low temperatures (600–800 K) and (2) annihilate above 800 K. These effects depend strongly on Ni/Al ratio and are greatest for Ni/Al=1. It is also shown that these data correlate directly with the results obtained using the other experimental techniques.

Investigations of Microstructural Changes in Nickel Thin Films on Ionimplanted Silicon by Cross-Sectional Transmission Electron Microscopy with Intermittent Annealings in N2 Ambient

1987 ◽  
Vol 94 ◽  
Author(s):  
S. W. Lu ◽  
C. W. Nieh ◽  
C. S. Chang ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Sectional ◽  
Nickel Thin Films ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Induced Defects ◽  
And Diffusion ◽  
Ion Implanted

ABSTRACTThe feasibility of studying dynamical changes in nickel thin films on ion-implanted silicon thin films by cross-sectional transmission electron microscopy (XTEM) with intermittent annealings in N2 ambient up to 850 °C is demonstrated. Interactions of nickel thin films with oxidation induced stacking faults, fluorine bubbles and process-induced defects in ion implanted silicon are provided as examples. The technique may be applied to clarify a number of important issues encountered in the study of the reactions and diffusion of thin films and obtain informations otherwise unattainable.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

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