Carbon Local Bonding Configurations in Amorphous Hydrogenated Silicon-Carbon Alloys

1987 ◽  
Vol 95 ◽  
Author(s):  
Mark A. Petrich ◽  
Jeffrey A. Reimer
Keyword(s):  
Thin Films ◽  
Nuclear Magnetic Resonance ◽  
Silicon Carbide ◽  
Magnetic Resonance ◽  
Hydrogenated Silicon ◽  
Nmr Data ◽  
Amorphous Hydrogenated Silicon ◽  
Nmr Study ◽  
Silicon Carbon ◽  
Local Bonding

AbstractWe present the results of a carbon-13 nuclear magnetic resonance (NMR) study of well-characterized thin films of amorphous hydrogenated silicon carbide. The NMR data detail the distribution of carbon local bonding configurations in films which have carbon-to-silicon ratios less than one. In particular, we show data which clearly identify and quantify non-hydrogenated sp2, or unsaturated, carbon bonding environments.

DEPOSITION-AND-SUBSTRATE TUNABLE PHOTONIC BANDGAP IN OPTICAL RESPONSES OF HYDROGENATED AMORPHOUS SILICON CARBIDE THIN FILMS

2003 ◽  
Vol 17 (09) ◽  
pp. 387-392 ◽  
Author(s):  
NIKIFOR RAKOV ◽  
ARSHAD MAHMOOD ◽  
MUFEI XIAO
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Photonic Bandgap ◽  
Visible Spectrum ◽  
Incoherent Light ◽  
Hydrogenated Silicon ◽  
Optical Responses ◽  
Amorphous Hydrogenated Silicon ◽  
The Status ◽  
Two Parameters

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been prepared by the RF reactive magnetron sputtering technique. The optical properties of the films have been studied by optical spectroscopy with an incoherent light source. The material is commonly regarded as a dielectric. We have discovered however that some films that were prepared under certain deposition conditions and on certain substrates may respond to external light as a metallic thin film, i.e. there are strongly enhanced reflection peaks in the optical spectrum. We have further discovered that some films may have a strong and broadened absorption peak at about 590 nm, which is an apparent photonic bandgap in the visible spectrum. The appearance of the photonic bandgap is very sensitive to two parameters: the substrate and the deposition gas. By changing the two parameters, one shifts the status of the film from with and without the photonic bandgap.

High‐Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon‐Carbon Alloys and Boron‐Doped Diamond Thin Films

2020 ◽  
Vol 257 (6) ◽  
pp. 1900247
Author(s):  
The Ha Stuchlikova ◽  
Jiri Stuchlik ◽  
Zdenek Remes ◽  
Andrew Taylor ◽  
Vincent Mortet ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Boron Doped Diamond ◽  
Pin Diodes ◽  
Hydrogenated Silicon ◽  
Boron Doped ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Diamond Thin Films

Nuclear Magnetic Resonance (NMR) of Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
W. K. Chang ◽  
M. Y. Liao ◽  
K. K. Gleason
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Bulk Single Crystal ◽  
Hydrogenated Silicon ◽  
Low Temperature Annealing ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Nanocrystallites ◽  
Nuclear Magnetic

AbstractPorous silicon (PS) was characterized by 1H, 19F and 29Si solid-state nuclear magnetic resonance (NMR). On freshly prepared samples, hydrogen contents were between 3 × 1014 and 3 × 1015 per cm2 of PS surface area, while fluorine concentrations were below the detection limit. Cross-polarization (CP) was used to selectively observe the 29Si near the hydrogen passivation. The features of the 29Si NMR spectra are assigned as (O)2(Si)Si-H (-50 ppm), (O)3Si-H (-84 ppm), (Si)3Si-H (-91 ppm), (Si)2Si-H2 (-102 ppm) and (O)4Si (-109 ppm). Changes resulting from low temperature annealing in air and an HF soak were observed by both NMR and infrared spectroscopy. The 29Si NMR line widths for PS fall between those for crystalline silicon and those for amorphous hydrogenated silicon films (a-Si:H), suggesting disorder near the PS surface is intermediate between these extremes. However, comparison of the isotropie chemical shift values shows that the bonding in the disordered regions of PS differs from that found in a-Si:H. In addition, the sharp 29Si NMR resonance observed in the bulk single crystal starting material can not be resolved in the spectra of PS. Thus, well-ordered silicon nanocrystallites in the PS are either several bond-lengths removed from hydrogen or comprise only a small fraction of the PS layer.

Interpretation of29Si nuclear magnetic resonance spectra of amorphous hydrogenated silicon

1986 ◽  
Vol 60 (5) ◽  
pp. 1839-1841 ◽  
Author(s):  
Shigenobu Hayashi ◽  
Kikuko Hayamizu ◽  
Satoshi Yamasaki ◽  
Akihisa Matsuda ◽  
Kazunobu Tanaka
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Nuclear Magnetic Resonance Spectra ◽  
Magnetic Resonance Spectra ◽  
Nuclear Magnetic

Hydrogen Dilution effects on Amorphous Hydrogenated Silicon (a-Si:H) Prepared by Glow Discharge Near Room Temperature

1991 ◽  
Vol 219 ◽  
Author(s):  
Man Ken Cheung ◽  
Mark A. Petrich
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Magnetic Resonance ◽  
Glow Discharge ◽  
Room Temperature ◽  
Rf Power ◽  
High Hydrogen ◽  
Hydrogenated Silicon ◽  
Hydrogen Dilution ◽  
Amorphous Hydrogenated Silicon ◽  
Dilution Effects

ABSTRACTWe report here the first phase of our attempt to deposit “device-quality” a-Si:H films by glow discharge near room temperature (50 °C). We have found that, at a low rf power density (40 mW/cm2) and high hydrogen/silane ratios (≥ 2), film quality is not uniquely determined by the substrate temperature, Ts. The microstructure of our low hydrogen content films as revealed by infrared (IR) and nuclear magnetic resonance (NMR) spectroscopies is similar to that of “device-quality” films deposited at standard Ts. The next phase of our work is to ascertain whether or not similar IR and NMR characteristics between our low Ts films and the standard Ts films imply also similar opto-electronic properties.

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results
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