Laser Induced Deposition of YBa2Cu3O7−x Thin Films

ABSTRACTWe describe here the deposition of the YBCO superconducting thin films by the laser evaporation technique. The characterization of this process, and possible optimization with regards to wavelength and pulse duration of the laser will be discussed.

Laser Induced Deposition of YBa2Cu3O7−x Thin Films

MRS Proceedings ◽

10.1557/proc-99-735 ◽

1987 ◽

Vol 99 ◽

Cited By ~ 1

Author(s):

H. S. Kwok ◽

P. Mattocks ◽

D. T. Shaw ◽

L. Shi ◽

X. W. Wang ◽

...

Keyword(s):

Thin Films ◽

Pulse Duration ◽

Laser Evaporation ◽

ABSTRACTWe describe here the deposition of the YBaCuO superconducting thin films by the laser evaporation technique. The characterization of this process, and possible optimization with regards to wavelength and pulse duration of the laser will be discus sed.

7170. Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique

Vacuum ◽

10.1016/0042-207x(91)90977-q ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 566

Keyword(s):

Thin Films ◽

Theoretical Model ◽

Pulsed Laser ◽

Laser Evaporation ◽

In-Situ Pulsed Laser Deposition of High-TC Yba2Cu3O7 Superconducting Thin Films on (100) LaAlO3 Substrates

MRS Proceedings ◽

10.1557/proc-169-451 ◽

1989 ◽

Vol 169 ◽

Cited By ~ 1

Author(s):

P. Tiwari ◽

S. Sharan ◽

R. K. Singh ◽

O. W. Holland ◽

J. Narayan

Keyword(s):

Thin Films ◽

High Frequency ◽

Pulsed Laser ◽

Zero Magnetic Field ◽

Laser Evaporation ◽

Superconducting Transition ◽

Ion Channeling ◽

Lanthanum Aluminate ◽

AbstractThe formation of superconducting thin films on lanthanum aluminate substrates is very important for high‐frequency applications. In this paper, we discuss the fabrication of epitaxial superconducting YBa2Cu3O7 thin films on (100)LaAlO3 substrates, which exhibit excellent dielectric properties required for high frequency applications. The films were deposited by the biased pulsed laser evaporation technique (PLE) at substrate temperatures between 500‐650°C and exhibit excellent crystallinity with best minimum ion channeling yields corresponding to approximately 3%. The superconducting transition temperatures varied from 88‐92 K with critical current densities at 77K and zero magnetic field greater than 4 ‐ 5 x 106 Amps/cm2.

Characterization of DyBa2Cu3O7+δ thin Films Prepared by Ozone-Assisted Co-Evaporation Technique

MRS Proceedings ◽

10.1557/proc-275-519 ◽

1992 ◽

Vol 275 ◽

Author(s):

T. J. Hsieh ◽

R. V. Smilgys ◽

C. K. Chiang ◽

S. W. Robey ◽

R. J. Arsenault ◽

...

Keyword(s):

Thin Films ◽

Electrical Resistivity ◽

Substrate Temperature ◽

Critical Currents ◽

Superconducting Properties ◽

Critical Temperatures ◽

Oriented Films ◽

ABSTRACTSuperconducting thin films of DyBa2Cu3O7-δ_ are deposited on MgO(100) substrates by an ozone-assisted coevaporation technique. At a relatively low substrate temperature (610°C) and with a fixed ozone flux we prepare highly c-axis oriented films with very good superconducting properties. The critical temperatures of the films are commonly above 85 K with critical currents above 10 5 A/cm2. We report on composition, microstructure, electrical resistivity and critical current of two good films.

Theoretical model for deposition of superconducting thin films using pulsed laser evaporation technique

Journal of Applied Physics ◽

10.1063/1.347123 ◽

1990 ◽

Vol 68 (1) ◽

pp. 233-247 ◽

Cited By ~ 205

Author(s):

R. K. Singh ◽

O. W. Holland ◽

J. Narayan

Keyword(s):

Thin Films ◽

Theoretical Model ◽

Pulsed Laser ◽

Laser Evaporation ◽

Micro-Raman analysis of Bi Sr Ca Cu O superconducting thin films deposited by pulsed laser evaporation

Physica C Superconductivity ◽

10.1016/0921-4534(89)90615-1 ◽

1989 ◽

Vol 162-164 ◽

pp. 1105-1106 ◽

Cited By ~ 4

Author(s):

E. Faulques ◽

P. Dupouy ◽

G. Hauchecorne ◽

F. Kerherve ◽

A. Laurent ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser ◽

Laser Evaporation ◽

Raman Analysis

Structural and Optical Characterization of Zinc Telluride Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.665.254 ◽

2013 ◽

Vol 665 ◽

pp. 254-262 ◽

Cited By ~ 2

Author(s):

J.R. Rathod ◽

Haresh S. Patel ◽

K.D. Patel ◽

V.M. Pathak

Keyword(s):

Thin Films ◽

Extinction Coefficient ◽

Nir Spectroscopy ◽

Optical Characterization ◽

X Ray Diffraction ◽

X Ray ◽

Evaporation Technique ◽

Film Form ◽

Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

In‐Situ Fabrication of YBa2Cu3O7‐x Superconducting Thin Films Directly on Silicon Substrates with Tc0 > 77K

MRS Proceedings ◽

10.1557/proc-169-481 ◽

1989 ◽

Vol 169 ◽

Author(s):

C. B. Lee ◽

R. K. Singh ◽

S. Sharan ◽

A. K. Singh ◽

P. Tiwari ◽

...

Keyword(s):

Thin Films ◽

Laser Pulses ◽

Superconducting Film ◽

Laser Evaporation ◽

Silicon Substrates ◽

Si Substrates ◽

In Situ Fabrication ◽

Substrate Temperatures

AbstractWe report in‐situ fabrication of c‐axis textured YBa2Cu3O7‐x superconducting thin films with Tco > 77K on unbuffered silicon substrates by the biased pulsed laser evaporation (PLE) technique in the temperature range of 550‐650°C. At substrate temperatures below 550°C, no c‐axis texturing of the superconducting film was observed. The YBa2Cu3O7‐x superconducting films were fabricated by ablating a bulk YBa2Cu3O7 target by a XeCl excimer laser (λ = 308 nm, τ = 45 × 10‐9 sec) in a chamber maintained at an oxygen pressure of 0.2 torr . The thickness of the films was varied from 0.3 to 0.5 nm depending on the number of laser pulses. Extensive diffusion was observed in thin films deposited at substrate temperatures above 550°C. However, microstructurally, with increase in the substrate temperature the films exhibited larger grain size and greater degree of c‐axis texturing (measured by the ratio of the (005) and (110) X‐ray diffraction peaks). This was found to give rise to better superconducting properties with Tco exceeding 77 K for YBa2Cu3O7‐x films deposited on Si substrates at 650°C.