Interface connection modulation by CuxS buffer layer on charge transfer performance enhancement of CuInS2 quantum dot-sensitized solar cells

2021 ◽  
Author(s):  
Meng Wang ◽  
Zhuoyin Peng ◽  
Zuoqiu Ning ◽  
Jianlin Chen ◽  
Wei Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Quantum Dot ◽  
Buffer Layer ◽  
Performance Enhancement ◽  
Transfer Performance ◽  
Sensitized Solar Cells

Influence of ZnO nano-array interlayer on the charge transfer performance of quantum dot sensitized solar cells

2019 ◽  
Vol 299 ◽  
pp. 206-212 ◽  
Author(s):  
Zhuoyin Peng ◽  
Zhou Liu ◽  
Jianlin Chen ◽  
Yanjie Ren ◽  
Wei Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Quantum Dot ◽  
Transfer Performance ◽  
Sensitized Solar Cells

Charge generation performance enhancement by size-dependent Cu2GeSe3quantum dot-sensitized solar cells

2019 ◽  
Vol 12 (01) ◽  
pp. 1850090
Author(s):  
Zhou Liu ◽  
Zhuoyin Peng ◽  
Jianlin Chen ◽  
Wei Li ◽  
Jian Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Conversion Efficiency ◽  
Performance Enhancement ◽  
Photovoltaic Performance ◽  
Charge Generation ◽  
Transfer Property ◽  
Photon Conversion ◽  
Sensitized Solar Cells

Cu2GeSe3 quantum dot is introduced to instead of non-toxic CuInSe2 as a sensitizer for solar cells, which is employed to enhance the photovoltaic performance. Cu2GeSe3 quantum dots with various sizes are prepared by thermolysis process, which are employed for the fabrication of quantum dot-sensitized solar cells (QDSSC) according to assembly linking process. The optical absorption properties of the Cu2GeSe3 quantum dot-sensitized photo-electrodes have been obviously enhanced by the size optimization of quantum dots, which are better than that of CuInSe2-based photo-electrodes. Due to the balance on the deposition quantity and charge transfer property of the quantum dots, 3.9[Formula: see text]nm-sized Cu2GeSe3 QDSSC exhibits the highest current density value and incident photon conversion efficiency response, which result in a higher photovoltaic conversion efficiency than that of CuInSe2 QDSSC. The modulation of Cu2GeSe3 QDs will further improve the performance of photovoltaic devices.

A stoichiometric CdS interlayer for the photovoltaic performance enhancement of quantum-dot sensitized solar cells

2019 ◽  
Vol 21 (7) ◽  
pp. 3970-3975 ◽  
Author(s):  
Shixin Chen ◽  
Yinglin Wang ◽  
Shuang Lu ◽  
Yichun Liu ◽  
Xintong Zhang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Performance Enhancement ◽  
Sol Gel ◽  
Photovoltaic Performance ◽  
Stoichiometric Ratio ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sensitized Solar Cells

We employed a sol–gel method to prepare a CdS interlayer (CdS-SG) with a stoichiometric ratio and then fabricated QDSCs.

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